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    TRANSISTOR HE8050S Search Results

    TRANSISTOR HE8050S Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR HE8050S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HE8050S

    Abstract: transistor he8050s HE8050SC equivalent of HE8050S HE6110
    Text: HI-SINCERITY Spec. No. : HE6110 Issued Date : 1992.09.30 Revised Date : 2001.07.18 Page No. : 1/4 MICROELECTRONICS CORP. HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050S is designed for general purpose amplifier applications. Absolute Maximum Ratings


    Original     		PDF HE6110 HE8050S HE8050S 25hibited transistor he8050s HE8050SC equivalent of HE8050S HE6110

    HE8050S

    Abstract: equivalent of HE8050S MARKING CODE H1 transistor he8050s h2 marking SOLID POWER CORP transistor h2a HE6110
    Text: HI-SINCERITY Spec. No. : HE6110 Issued Date : 1992.09.30 Revised Date : 2004.07.26 Page No. : 1/5 MICROELECTRONICS CORP. HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050S is designed for general purpose amplifier applications. TO-92 Absolute Maximum Ratings


    Original     		PDF HE6110 HE8050S HE8050S 183oC 217oC 260oC equivalent of HE8050S MARKING CODE H1 transistor he8050s h2 marking SOLID POWER CORP transistor h2a HE6110

    HE8550S

    Abstract: HE8050S
    Text: HI-SINCERITY Spec. No. : HE6129 Issued Date : 1993.01.15 Revised Date : 2004.07.26 Page No. : 1/5 MICROELECTRONICS CORP. HE8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8550S is designed for general purpose amplifier applications. Features TO-92


    Original     		PDF HE6129 HE8550S HE8550S 150mA HE8050S 183oC 217oC 260oC HE8050S

    HE8550S

    Abstract: HE8050S
    Text: HI-SINCERITY Spec. No. : HE6129 Issued Date : 1993.01.15 Revised Date : 2002.03.05 Page No. : 1/4 MICROELECTRONICS CORP. HE8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8550S is designed for general purpose amplifier applications. Features TO-92


    Original     		PDF HE6129 HE8550S HE8550S 150mA HE8050S HE8050S

    H66T19AA

    Abstract: H66T19BA H66T32AA H66T32BA H66T68AA ha2002 64not
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HA200220 Issued Date : 1998.04.08 Revised Date : 2002.12.20 Page No. : 1/4 H66T19/32/68 Series Description The H66T19/32/68 series is a CMOS LSI designed for use in door bell, telephone and toy applications. It is an on-chip ROM program-med for


    Original     		PDF HA200220 H66T19/32/68 H66T19/32-/68 64-Note H66T19XA, H66T32XA, H66T68XA H66T19AA H66T19BA H66T32AA H66T32BA H66T68AA ha2002 64not

    equivalent of HE8050S

    Abstract: H66T19AA H66T19BA H66T32AA H66T32BA H66T68AA HE8050S transistor j 127
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :Preliminary Data Issued Date : 1998.04.08 Revised Date : 1999.08.01 Page No. : 1/4 H66T19/32/68 Series Description The H66T19/32/68 series is a CMOS LSI designed for use in door bell, telephone and toy applications. It is an on-chip ROM


    Original     		PDF H66T19/32/68 64-Note equivalent of HE8050S H66T19AA H66T19BA H66T32AA H66T32BA H66T68AA HE8050S transistor j 127

    MJE2955

    Abstract: 2N3645 bc557 BC307 BC212
    Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer


    OCR Scan     		PDF O-92SP O-237 O-220 O-928> iO051 MJE2955 2N3645 bc557 BC307 BC212