Halbleiterbauelemente DDR
Abstract: elektronik DDR Leistungsdiode Halbleiter-Bauelemente DDR Hallgenerator CSSR silizium diode
Text: Tunneldiode HF-Transistor Diode Kapazitätsdiode NF-Transistor NF-Leistungstransistor Ptot >1W Bauelement 2.Element Hall-Feldsonde CSSR: Silizium Hall-Generator CSSR: Galliumarsenidphosphid HF-transistor Hall-Generator DDR: MIS-Transistor strahlungsempfindliches
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diode RU 3AM
Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)
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transistor c36
Abstract: wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134
Text: =5= ,-= E -= EF an AMP company * ,- .-z = Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry
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PH3134-11s
MJLLIMET1344)
transistor c36
wacom
wacom connector
transistor j8
f 9234
transistor B 325
PH3134
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12vdc motor forward reverse control diagram
Abstract: st l6384 applications L6386 application three phase bridge inverter 120 degree Three phase inverter mosfet Diagram AN1263 l6384 L6385 L6386 sizing freewheeling diode application note
Text: AN1263 APPLICATION NOTE USING THE INTERNAL BOOTSTRAP CHARGE CAPABILITY OF THE L6384, 85, AND 86 IN DRIVING A SIX TRANSISTOR INVERTER BRIDGE by: Dennis Nolan Review of Traditional Bootstrap Circuit: Figure 1.0 depicts a typical six transistor, three phase DC-to-AC inverter bridge which uses the BOOTSTRAP
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AN1263
L6384,
12vdc motor forward reverse control diagram
st l6384 applications
L6386 application
three phase bridge inverter 120 degree
Three phase inverter mosfet Diagram
AN1263
l6384
L6385
L6386
sizing freewheeling diode application note
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HALL EFFECT 21E
Abstract: thyristor aeg aeg thyristor transistor Common Base configuration general electric C22B equivalent transistor bc 172 b aeg 2101 thyristor bipolar power transistor data BC 148 TRANSISTOR sot-23 npn marking code cr
Text: Bipolar Power Transistor Data Book 1996 Semiconductors TELEFUNKEN Semiconductors Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Selector Guide, Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Three phase inverter mosfet Diagram
Abstract: l6384 AN1263 L6385 L6386 USING INTERNAL BOOTSTRAP CHARGE CAPABILITY L6384 three phase bridge inverter 120 degree
Text: AN1263 APPLICATION NOTE USING THE INTERNAL BOOTSTRAP CHARGE CAPABILITY OF THE L6384, 85, AND 86 IN DRIVING A SIX TRANSISTOR INVERTER BRIDGE by: Dennis Nolan Review of Traditional Bootstrap Circuit: Figure 1.0 depicts a typical six transistor, three phase DC-to-AC inverter bridge which uses the BOOTSTRAP
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AN1263
L6384,
Three phase inverter mosfet Diagram
l6384
AN1263
L6385
L6386
USING INTERNAL BOOTSTRAP CHARGE CAPABILITY L6384
three phase bridge inverter 120 degree
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smd 2xY
Abstract: unipolar transistor magnetic sensor SMD Hall sensors Hall 221 micronas hall 203 SMD Hall C smd hall smd hall sensor hall smd magnetic flow meter
Text: PRODUCT INFORMATION HAL 2xy April/2009 HAL 2xy Low-Cost Hall-Effect Sensor Family The HAL 2xy Hall switch family is produced in CMOS technology. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor.
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April/2009
PI000010
002EN
D-79108
D-79008
smd 2xY
unipolar transistor magnetic sensor
SMD Hall sensors
Hall 221
micronas hall 203
SMD Hall C
smd hall
smd hall sensor
hall smd
magnetic flow meter
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3 pin SMD hall sensor
Abstract: hall sensor smd 4 Pin SMD Hall sensors SMD Hall sensors unipolar transistor magnetic sensor SMD Hall C hal203 smd hall sensor 4 lead SMD Hall sensors HAL204
Text: PRODUCT INFORMATION HAL 2xy May/2006 HAL 2xy Low-Cost Hall-Effect Sensor Family The HAL 2xy Hall switch family is produced in CMOS technology. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor.
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May/2006
6251-703-1PI
D-79108
D-79008
3 pin SMD hall sensor
hall sensor smd
4 Pin SMD Hall sensors
SMD Hall sensors
unipolar transistor magnetic sensor
SMD Hall C
hal203
smd hall sensor
4 lead SMD Hall sensors
HAL204
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hc14
Abstract: AN8261
Text: AN8261 Brushless Motor Driver • Overview 21.7±0.3 • Operating supply voltage range : VCC= 4.5 to 7V • 3-phase full-wave drive, external power transistor • Built-in low-voltage protective circuit • Built-in thermal protective comparator circuit • Built-in Hall amplifiers with hysteresis
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AN8261
AN8261
51min.
hc14
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AN8261
Abstract: block diagram of air conditioner panasonic air conditioner
Text: AN8261 Brushless Motor Driver • Overview 21.7±0.3 • Operating supply voltage range : VCC= 4.5 to 7V • 3-phase full-wave drive, external power transistor • Built-in low-voltage protective circuit • Built-in thermal protective comparator circuit • Built-in Hall amplifiers with hysteresis
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AN8261
AN8261
51min.
62nductor
block diagram of air conditioner
panasonic air conditioner
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state diagram for air conditioner
Abstract: No abstract text available
Text: AN8261 Brushless Motor Driver • Overview 21.7±0.3 • Operating supply voltage range : VCC= 4.5 to 7V • 3-phase full-wave drive, external power transistor • Built-in low-voltage protective circuit • Built-in thermal protective comparator circuit • Built-in Hall amplifiers with hysteresis
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AN8261
AN8261
51min.
18-pin
DIP018-P-0300D)
state diagram for air conditioner
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diode
Abstract: No abstract text available
Text: Product Groups ● Regulator ● High-side power switch ● Low-side power switch ● Stepper-motor driver IC ● Hall-Effect IC ● Custom IC ● Transistor ● MOS FET ● Rectifier Diode for alternator ● High-voltage diode for igniter ● Power Zener diode
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an 503 sensor hall
Abstract: an 503 hall sensor unipolar transistor magnetic sensor HALL Sensor TO92UA hall sensor 503 hall 503 hall 506 503 hall sensor to92ua 503 hall
Text: PRODUCT INFORMATION HAL 5xy Sept/2006 HAL 5xy Multipurpose Hall-Effect Sensor Family The HAL 5xy family consists of different Hall switches produced in CMOS technology. All sensors include a temperaturecompensated Hall plate with active offset compensation, a comparator, and an opendrain output transistor. The comparator
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Sept/2006
6251-712-1PI
D-79108
D-79008
an 503 sensor hall
an 503 hall sensor
unipolar transistor magnetic sensor
HALL Sensor TO92UA
hall sensor 503
hall 503
hall 506
503 hall sensor
to92ua
503 hall
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diode
Abstract: HALL-EFFECT IC
Text: Product Groups ● Regulator ● High-side power switch ● Low-side power switch ● Motor driver IC ● Hall-Effect IC ● Custom IC ● Transistor ● MOS FET ● Rectifier Diode for alternator ● High-voltage diode for igniter ● Power Zener diode ● General-purpose diode
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Untitled
Abstract: No abstract text available
Text: ISSUE 1 Installation Instructions for the 50021068 SNDJ-H3C-G01 Zero-Speed Hall-effect Sensor Housing: M 12 x 1 Connector: M 12 x 1 standard/4 pins Supply voltage: 8 Vdc to 25 Vdc Signal output: Square wave signal from NPN output transistor with 2.7 kOhm pull-up, DC-coupled to the supply
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SNDJ-H3C-G01
50021068-1-EN
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philips Electronic ballast t5
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic fuli-pack envelope intended for use in electronic HF/OH lighting ballast applications, converters, inverters, switching regulators, motor control
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BUJ403AX
philips Electronic ballast t5
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BU2708AF
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current
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BU2708AF
BU2708AF
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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BE555MN
Abstract: No abstract text available
Text: ANALOGUE;_ _ INTEGRATED C O N T R O L , TEMPERATURE 13 A 7 2 e 13 A 7 2 s X CIRCHTTS H im I N D U S T R I A L CONTROLLED TRANSISTOR S.A. ARRAYS Features : BA 726 Transistor pair offset voltage . - max.+3 Max. bias current # I,;=100uA : 6 Max. bias current @ I(‘.=10uA :
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100uA
MP-48
MP-24
BE555MN
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Untitled
Abstract: No abstract text available
Text: HAL114 Unipolar Hall Switch IC in CMOS technology Marking Code Type Introduction The HAL114 is a Hall switch produced in CMOS technol ogy. The sensor includes a temperature-compensated Hall plate, a Schmitt trigger, and an open-drain output transistor see Fig. 2 .
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HAL114
HAL114
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1117 S 3,3 Transistor
Abstract: Hall Sensor 4-lead S-Mini 1117 S Transistor transistor 1345
Text: CONTENTS PREFACE Related Document System List of Small Signal Transistors & Diodes Surface Mount Devices . 5 1. Using Device Selection Flowchart . 15 General Purpose Low Frequency Transistor SelectionMethod .
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TA75W
1117 S 3,3 Transistor
Hall Sensor 4-lead
S-Mini
1117 S Transistor
transistor 1345
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pj 83 diode
Abstract: Mitsubishi transistor mitsubishi servo power module WA200
Text: MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM20KD-HB lc Collector current. 20A VCEX Collector-emitter voltage.600V hFE DC current gain. 250
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QM20KD-HB
E80276
E80271
pj 83 diode
Mitsubishi transistor
mitsubishi servo power module
WA200
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