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    TRANSISTOR HA3669 Search Results

    TRANSISTOR HA3669 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR HA3669 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HA3669

    Abstract: transistor ha3669 diode marking H2
    Text: HI-SINCERITY Spec. No. : HA200210 Issued Date : 2000.11.01 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA3669 is designed for using in power amplifier applications, power switching


    Original     		PDF HA200210 HA3669 HA3669 183oC 217oC 260oC transistor ha3669 diode marking H2

    HA200210

    Abstract: HA3669 ha366 ha2002
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HA200210 Issued Date : 2000.11.01 Revised Date : 2002.04.18 Page No. : 1/3 HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA3669 is designed for using in power amplifier applications, power switching application.


    Original     		PDF HA200210 HA3669 HA3669 HA200210 ha366 ha2002