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    TRANSISTOR H 8050 Search Results

    TRANSISTOR H 8050 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR H 8050 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TPCA8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPCA8050-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications Unit: mm 1.27 0.4 ± 0.1 High-speed switching • Small gate charge: QSW = 10 nC (typ.)


    Original     		PDF TPCA8050-H

    TPCA8050-H

    Abstract: tpca8050 8050-H
    Text: TPCA8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPCA8050-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications Unit: mm 1.27 0.4 ± 0.1 High-speed switching • Small gate charge: QSW = 10 nC (typ.)


    Original     		PDF TPCA8050-H TPCA8050-H tpca8050 8050-H

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 8050S NPN SILICON TRANSISTOR LOW V OLT AGE H I GH CU RREN T SM ALL SI GN AL N PN T RAN SI ST OR 3 1 2 SOT-23  DESCRI PT I ON The UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and


    Original     		PDF 8050S OT-23 8050S 700mA 8550S 8050SL-x-AE3-R 8050SG-x-AE3-R 8050SL-x-T92-B 8050SG-x-T92-B 8050SL-x-T92-K

    Untitled

    Abstract: No abstract text available
    Text: TPCA8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOS -H TPCA8050-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications 1.27 0.4 ± 0.1 Small gate charge: QSW = 10 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 9.0 mΩ (typ.)


    Original     		PDF TPCA8050-H

    8050SST

    Abstract: 8050SS
    Text: 8050SST 1.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  General Purpose Switching and Amplification. G H Emitter Collector Base J


    Original     		PDF 8050SST 8050SST-B 8050SST-C 8050SST-D 18-Feb-2011 100mA 800mA 800mA, 30MHz 8050SST 8050SS

    E8550S

    Abstract: transistor 8550S
    Text: 8550S PNP SILICON TRANSISTOR LOW V OLT AGE H I GH CU RREN T SM ALL SI GN AL PN P T RAN SI ST OR 3 1 2 SOT-23 ̈ DESCRI PT I ON The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications.


    Original     		PDF 8550S OT-23 8550S 700mA 8050S 8550S-x-AE3-R 8550S-x-T92-B 8550S-x-T92-K 8550SL-x-AE3-R 8550SL-x-T92-B E8550S transistor 8550S

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8050S NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.


    Original     		PDF 8050S 8050S 700mA 8550S 8050SL-x-AE3-R 8050SG-x-AE3-R 8050SL-x-T92-B 8050SG-x-T92-B 8050SL-x-T92-K 8050SG-x-T92-K

    he 8050s

    Abstract: transistor marking B9 MARKING B9 sot-23 8550SL UTC 8550SL
    Text: UNISONIC TECHNOLOGIES CO., 8550S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR FEATURES 2 1 *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S 3 MARKING SOT-23 B9 *Pb-free plating product number: 8550SL


    Original     		PDF 8550S 700mA 8050S OT-23 8550SL 8550S-AE3-R 8550SL-AE3-R OT-23 QW-R206-002 he 8050s transistor marking B9 MARKING B9 sot-23 8550SL UTC 8550SL

    Untitled

    Abstract: No abstract text available
    Text: UTC 8 5 5 0 S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S 1 APPLICATIONS *Class B push-pull audio amplifier *General purpose applications


    Original     		PDF 800mA 8050S

    8050j

    Abstract: No abstract text available
    Text: SI-8050JF Data Sheet 27469.32* ng rs i h o itc lat Sw egu R Step-Down to 5.0 V, 1.5 A, DC/DC Converter Designed to meet high-current requirements at high efficiency in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office or telecommunications equipment, the


    Original     		PDF SI-8050JF SI-8050JF 8050j

    Untitled

    Abstract: No abstract text available
    Text: SI-8050JF Data Sheet 27469.32* ng rs i h o itc lat Sw egu R Step-Down to 5.0 V, 1.5 A, DC/DC Converter Designed to meet high-current requirements at high efficiency in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office or telecommunications equipment, the


    Original     		PDF SI-8050JF SI-8050JF

    transistor br 8050

    Abstract: BR 8050 D BR 8050 NPN transistor 8050 PNP 8550 BR 8050 c hFE 8050 transistor b 8050 1/STK 8050 ic
    Text: 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    st 8050d

    Abstract: st8050c st8050d BR 8050 D st 8050C 8050c transistor 8050 TRANSISTOR PNP BR 8050 st 8050 8050B
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    st 8050d

    Abstract: NPN transistor 8050d st8050c TRANSISTOR c 8050 transistor br 8050 BR 8050 D BR 8050 transistor b 8050 8050 pnp transistor 8050 TRANSISTOR PNP
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    st 8050d

    Abstract: 8050 TRANSISTOR PNP BR 8050 BR 8050 D transistor br 8050 st8050c st 8050C 8050 pnp transistor NPN transistor 8050d 8050D
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TLP731,TLP732 TO SH IBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP731, TLP732 OFFICE M AC H IN E HOUSEHOLD USE EQ UIPM ENT SOLID STATE RELAY SW ITCHING POWER SUPPLY The TOSHIBA TLP731 and TLP732 consist of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in i


    OCR Scan     		PDF TLP731 TLP732 TLP731, TLP732 UL1577, E67349 EN60065

    Untitled

    Abstract: No abstract text available
    Text: 8550A SEM ICONDUCTOR FORWARD n m R H A m tU L ELECTRONICS L m TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR MOTOR DRIVER Package: TO-92 * Complement to 8050A * Collector Current: Ic=-1.5A * Collector Dissipation Pc=lW Ta=25°C 9 ABSOLUTE MAXIMUM RATINGS a t Tarr*r-25'C


    OCR Scan     		PDF -100uA -100m -800m 800mA -80mA ce-10V

    200 watt audio ic

    Abstract: ic 8050 8050h
    Text: CRÛ 8050 G E N E R A L D E S C R IP T IO N :- •4 H ie 8 0 5 0 is an NPN epitaxial silicon planar transistor designed for use in the audio ou tp ut stage and converter/inverter circuits. Complem entary to 8550. TO-92A R A T IN G S Note 1 Maximum Temperatures


    OCR Scan     		PDF 100mA Box69477, 200 watt audio ic ic 8050 8050h

    STR-S6707 circuit diagram

    Abstract: STR-S6708 STRs6707 STR-S6707 STRS6708 STR-S6707 thru STR-S6709
    Text: Data Sheet 28113* STR-S6707 t h r u STR-S6709 OFF-LINE SWITCHING REGULATORS - WITH BIPOLAR SWITCHING TRANSISTOR The STR-S6707, STR-S6708, and STR-S6709 are specifically designed to meet the requirement for increased integration and reliabil­ ity in off-line quasi-resonant flyback converters. These devices incorpo­


    OCR Scan     		PDF STR-S6707 STR-S6709 STR-S6707, STR-S6708, STR-S6709 STR-S6707 circuit diagram STR-S6708 STRs6707 STRS6708 STR-S6707 thru STR-S6709

    BR 8050 D

    Abstract: transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h
    Text: HN 8050 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type


    OCR Scan     		PDF 103mA BR 8050 D transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h

    805OA

    Abstract: 8550a 805o
    Text: I FORWARD INTERNATIONAL ELECTRONICS LTD. 8050A SEMICONDUCTOR TECHNICAL DATA I NPN EPITAXIAL SILICON TRANSISTOR MOTOR DRIVER * Complement to 8550A * Collector Current: Ic=1500mA * Collector Dissipation: Pc=lW Ta=25°C ABSOLUTE MAXIMUM RATINGS at Tan*=25',C


    OCR Scan     		PDF 805OA 500mA 100uA 100mA 800mA. 800mA 805OA 8550a 805o

    Untitled

    Abstract: No abstract text available
    Text: 8050A SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA M O T O R D R IV E R * Complement to 8550A * Collector C urrent: Ic=1500mA * Collector D issipation: Pc=lW Ta=25°C ABSOLUTE MAXIMUM RATINGS a t Tan*=25°C


    OCR Scan     		PDF 1500mA 100uA 800mA 100mA 800mA

    Untitled

    Abstract: No abstract text available
    Text: 8050S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 8550S * Collector C urrent: Ic=500mA * Collector D issipation: Pc=225mW Tc=25°C ABSOLUTE MAXIMUM RATINGS a t Tan*-25°C


    OCR Scan     		PDF 8050S 8550S 500mA 225mW 062in 300uS, 100uA 500mA

    Untitled

    Abstract: No abstract text available
    Text: 8050 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to 8550 * Collector Current: Ic=1500mA * Collector Dissipation: Pc=lW Ta=25°C


    OCR Scan     		PDF 1500mA 100mA 800mA 80QmA 800mA