Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR H 1061 Search Results

    TRANSISTOR H 1061 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR H 1061 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1061 FIBER SENSORS Ultra-compact Digital Panel Controller CA2 SERIES Related Information •■General terms and conditions. F-17 ■■General precautions. P.1405 LASER SENSORS PHOTOELECTRIC SENSORS Conforming to EMC Directive


    Original     		PDF

    BLY89A

    Abstract: transistor h 1061 Transistor bly89a D 1062 transistor transistor ALY 36 transistor 1971 yl 1060 Transistor ALY c2
    Text: P H I L I P S IN T E R N A T IO N A L MAINTENANCE TYPE M IE D H 7 1 1 0 0 2 b 0 0 2 7 ^ 5 1 ^•P H IN BLY89A T~33~/3 V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 13,5 V . The transistor is resistance stabilized. Every


    OCR Scan     		PDF 711002b BLY89A -T-33-/3 PL-25W BLY89A transistor h 1061 Transistor bly89a D 1062 transistor transistor ALY 36 transistor 1971 yl 1060 Transistor ALY c2

    Untitled

    Abstract: No abstract text available
    Text: bbS3^31 002514b MS3 H A P X Philips Semiconductors N AKER PHILIPS/DISCRETE Product specification b7E D NPN 2 GHz wideband transistor DESCRIPTION c BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application in thick and thin-film


    OCR Scan     		PDF 002514b BFR53 0D251SD bbS3T31

    y-parameter

    Abstract: MPS-H37 MPSH37 transistor h 1061
    Text: MPS-H37 SILICON IMPN SILICON ANNULAR TRANSISTOR . . . designed for 4.5 M H 2 sound IF applications in T V receivers. • High Breakdown Voltage — B V c E O = 40 V (Min) @ lQ = 1-0 niAdc • High O utput Resistance @ 4.5 M H z — -Y o e (r e a l)


    OCR Scan     		PDF MPS-H37 y-parameter MPS-H37 MPSH37 transistor h 1061

    transistor h 1061

    Abstract: No abstract text available
    Text: CSC 1061 CSC1061 NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier DIM A B C D E F G H J K L M N MIN MAX 14.42 9.63 3,56 16.51 10.67 4.83 0.90 1.15 1,40 3.75 3.68 2,29 2.79 2,54 3.43 0,56 12.70 14.73 6,35 2.03 2,92 31.24 7 DEG ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF CSC1061 transistor h 1061

    Untitled

    Abstract: No abstract text available
    Text: h 7 > y X $ /Transistors FMY3 FMY3 x f c f $ ^ r '> T ^ 7 V - ^ y a . 7 7; i / $ - ; E - ; i / K P N P / N P N y ' J : l > h 7 / y ^ •f >/<— £ K 7 < /''/In ve rter Driver Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor y — >f — 5 — T


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 356 Vbs 800 V h ^DS on Package Ordering Code 5.3 A 2w TO-218AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit


    OCR Scan     		PDF O-218AA C67078-S3108-A2 flB35bG5 O-218

    transistor h 1061

    Abstract: CSC1061 transistor 1061
    Text: CSC 1061 CSC1061 NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0,90 1.15 1,40 3.75 3.88 2.29 2.79 2,54 3.43 0,56 12.70 14.73 6,35 2.03 2,92 31.24 7 DEG 14.42 9.63 3.56 A BSO LU TE M A XIM U M RATINGS


    OCR Scan     		PDF CSC1061 transistor h 1061 transistor 1061

    transistor 356 j

    Abstract: transistor 356 b
    Text: SIEMENS BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 356 Vbs 800 V h 5.3 A ^DSion Package Ordering Code 2H TO-218 AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b 5.3


    OCR Scan     		PDF O-218 C67078-S3108-A2 O-218AA transistor 356 j transistor 356 b

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan     		PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    2901J

    Abstract: 1072 3k2
    Text: HD66300T- Horizontal Driver for TFT-Type LCD Color TV The HD66300T is a horizontal driver used for TFTtype (Thin Film Transistor) LCD color TVs. Specifi­ cally, it drives the drain bus signals of a TFT-type LCD panel. The H D66300T receives as input three video signals R,


    OCR Scan     		PDF HD66300T--------------- HD66300T D66300T HD66300T 2901J 1072 3k2

    bly87c

    Abstract: transistor tt 2222 yl 1060
    Text: N AMER PHILIPS/DISCRETE bTE D • ttS3T31 ODSTbbb 415 H A P X BLY87C Jl V.H.F. POWER TRANSISTOR N-P-N silico n planar e pitaxial tra nsistor intended fo r use in class-A, B and C operated m obile, h.f. and v.h.f. transm itters w ith a nom inal su p p ly voltage o f 13,5 V . T h e tra nsistor is resistance sta bilize d and


    OCR Scan     		PDF bb53S31 BLY87C 7Z77729 7Z77730 bly87c transistor tt 2222 yl 1060

    transistor h 1061

    Abstract: No abstract text available
    Text: ROHM CO 4ÜE LTD T Ä S B 'm D QOQbBST h 7 > y 7 $ / T ransistors 7 FM Y3 y z 2 7 - 2 ,7 • 1 *1 ■ W -f K v ri/ty ln v e rte r Driver Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor • [S/Dimensions Unit: mm 2 D HUH • F e atu re 1) A su p e r-m in im o id p a c k a g e h ouses 2


    OCR Scan     		PDF

    C4023

    Abstract: STP40N05 STP40N05FI GC286
    Text: 7 cî2cî237 0 0 m 34bT T B 1? • S G T H SGS-THOMSON STP40N05 STP40N05FI üO T@ KS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP40N05 STP40N05FI ■ . ■ ■ . ■ ■ . V dss R öS on Id 50 V 50 V < 0.035 Q < 0.035 Q 40 A 23 A TYPICAL RDS(on) = 0.03 i l


    OCR Scan     		PDF 004b4b STP40N05 STP40N05FI STP40N05 STP40N05FI D04Li47S STP40N05/FI C4023 GC286

    Mosfet FTR 03-E

    Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
    Text: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP


    OCR Scan     		PDF 2SK1976 2SK2095 2SK2176 O-220FP 2SA785 2SA790 2SA790M 2SA806 Mosfet FTR 03-E mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337

    transistor tt 2222

    Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060
    Text: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and


    OCR Scan     		PDF 711002b BLY87C transistor tt 2222 Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060

    3D24N2Y

    Abstract: transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N
    Text: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB R U N O F U N K U N D FE R N SE H E N AUSGABE: M m ri r a d i o - t e i e v i s i o n l 1 9 8 4 14-16 S e ite 1 - 1 2 Mitteilung aus dem VSB RFT Industrievertrieb R.u.F. Leipzig Serviceinformationen zuin neuen Auto-Stereo-Kassettenabspielgerät


    OCR Scan     		PDF Ge1012 3D24N2Y transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N

    Untitled

    Abstract: No abstract text available
    Text: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF 001420b BLY93A r3774

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    TEA2029

    Abstract: TEA 2164
    Text: SGS-THOMSON TEA2164 SW ITCH M O DE PO W ER SUPPLY PRIM ARY C IR C U IT • POSITIVE AND NEGATIVE O UTPUT CUR­ RENT UP TO 1,2A AND - 1,7A ■ A TW O LEVEL CO LLECTOR CURRENT LIMI­ TATION . CO M PLETE TURN OFF AFTER LONG DURA­ TION OVERLOADS ■ UNDER AND OVER VOLTAGE LOCK-OUT


    OCR Scan     		PDF TEA2164 E89TEA2164-22 TEA2029 TEA 2164

    BLY93A

    Abstract: D 1062 transistor Trimmer 10-60 pf IEC134 transistor ao yl 1060
    Text: N AMER PHILIPS/DISCRETE 86D GbE D 01968 D Bi b 353^31 001450t. 2 T^~23-f( " “ BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r use inclass-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 28 V . The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF 001450t. BLY93A OT-56. Tmb-25 BLY93A D 1062 transistor Trimmer 10-60 pf IEC134 transistor ao yl 1060

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF

    UJT 2N2646 specification

    Abstract: UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 0047/iF 100kn UJT 2N2646 specification UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1