TRANSISTOR GF 122 Search Results

TRANSISTOR GF 122 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR GF 122 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
thermal conductive teflon Abstract: No abstract text available Text: Hola1 H A H Insulating caps and insolater sleeves Insulating caps different transistor flange levels will be compensated by the impressed sleeves B art. no. C IK 341 3 art. no. D IK 3 material pressed-in sleeves flammability polyamide, GF reinforced caps	Original		PDF
6P45S Abstract: 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550 Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N m m 1r a d i o - television QKTOBKR \| 1 9 8 1 11 SEITE Mitteilung auf dem 7KB Fernsehgerätewerke "Friedr. Sögels" Staßfurt Servlcehi nwels zum SECAM - IS - Dekoder A 295 D» A 220 D	OCR Scan	TGLIO395 III/I8/379 6P45S 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550	PDF
TAA 691 Abstract: taa691 transistor gt 322 BY238 transistor gc 301 oa-1160 elektronik DDR oa 1160 service-mitteilungen oa1160 Text: SERVICE-MITTEILUNGEN 11/72 «BBsm r a d i o -television \~ 1972 V E B IN O U 8 T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N AUSGABE: DATUM: D#z . Neue Import-Geräte Fernsehgerät s/w " E L E K T R O N 24" Aus der VR Ungarn wird das Fernsehgerät "ELEKTRON" importiert und	OCR Scan		PDF
transistor vergleichsliste Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N	OCR Scan		PDF
E6B-CWZ Abstract: Omron E6B-CWZ3C E6B-CWZ3C E6B-CWZ3E E6B2-CWZ5B E6B2-CWZ6C E6B2-CWZ1X Omron E6B-CWZ3E E69-C06M Omron H7CR Text: Rotary Encoder E6B2 New General-purpose Incremental Rotary Encoder A wide operating voltage range of 5 to 24 VDC open collector model . Resolution of 2,000 pulses/revolution in 40-mm housing. Phase Z can be adjusted with ease using the origin indicating function.	Original	40-mm 0/30/40/50/60/100/200/300/360/400/500/ICS 847-843-7900/Fax: 835-3011/Fax: ISO9001-approval ISO14001-approval Q085-E1-1C E6B-CWZ Omron E6B-CWZ3C E6B-CWZ3C E6B-CWZ3E E6B2-CWZ5B E6B2-CWZ6C E6B2-CWZ1X Omron E6B-CWZ3E E69-C06M Omron H7CR	PDF
Triac/TRIAC TAG 92 Abstract: TRIAC TAG 425 600 TRIAC TAG 280 600 tag 453 triac triac tag 425 400 TRIAC TAG 92 transistor ac51 EN60669-2-1 TAG 453 280 800 TRIAC TAG 90 Text: SIMM Series Input Modules * 6.2 mm wide and 65 mm deep * DIN Rail mounted * LED input status indicator * Bridges enable quick linking of common voltage * Identification zone on front face * IP20 Part numbers 84145061 84145062 84145064 84145066 84145071 24Vac/dc	Original	24Vac/dc 2-30Vac/dc 95-121Vac/dc 195-253Vac/dc 30Vac/36Vdc Triac/TRIAC TAG 92 TRIAC TAG 425 600 TRIAC TAG 280 600 tag 453 triac triac tag 425 400 TRIAC TAG 92 transistor ac51 EN60669-2-1 TAG 453 280 800 TRIAC TAG 90	PDF
transistor c 6093 Abstract: No abstract text available Text: W tw l H E W L E T T müHM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 1500 MHz Technical Data UTO/UTC 1524 Series Features Description Pin Configuration • Frequency Range: 10 to 1500 MHz • High Gain: 22.0 dB Typ The 1524 Series is a two-stage	OCR Scan	44M75Ã transistor c 6093	PDF
Untitled Abstract: No abstract text available Text: ¥fmL'¿K¡%M HPACKARD EW LETT Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1013 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1013 Series is a wideband general puipose thin-film bipolar	OCR Scan	Ampl03	PDF
toko rcl Abstract: RCL TOKO data TOKO 455KHz demodulator 7MCS-13546Z circuit diagram blood analyzer RCL TOKO Filter Murata, crystal oscillator 30MHz toko rcl COIL application of colpitts oscillator BLFC455D Text: APPLICATION MANUAL Narrow Band FM IF IC TK83361M CONTENTS 1 . DESCRIPTION 2 . FEATURES 3. APPLICATIONS 4 . PACKAGE OUTLINE 5 . PIN CONFIGURATION/BLOCK DIAGRAM 6 . TEST CIRCUIT 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS 9 . TYPICAL CHARACTERISTICS	Original	TK83361M GC3-H022 OP-16 toko rcl RCL TOKO data TOKO 455KHz demodulator 7MCS-13546Z circuit diagram blood analyzer RCL TOKO Filter Murata, crystal oscillator 30MHz toko rcl COIL application of colpitts oscillator BLFC455D	PDF
toko rcl Abstract: RCL TOKO data variable coils toko rcl TOKO 455KHz demodulator TOKO 10.7MHz filter wide TOKO CERAMIC FILTER 455 30MHz-overtone 7MCS-13546Z 7MC-8128Z RCL TOKO Filter Text: APPLICATION MANUAL Narrow Band FM IF IC TK83361M CONTENTS 1 . DESCRIPTION 2 . FEATURES 3. APPLICATIONS 4 . PACKAGE OUTLINE 5 . PIN CONFIGURATION/BLOCK DIAGRAM 6 . TEST CIRCUIT 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS 9 . TYPICAL CHARACTERISTICS	Original	TK83361M GC3-H022 TK83361M toko rcl RCL TOKO data variable coils toko rcl TOKO 455KHz demodulator TOKO 10.7MHz filter wide TOKO CERAMIC FILTER 455 30MHz-overtone 7MCS-13546Z 7MC-8128Z RCL TOKO Filter	PDF
TV booster diagram Abstract: mhw* 820-1 DATASHEET pcb assembly 85501 application circuits of ic 74121 MHW6342TN motorola 18310 MHL9236MN DL210 010485 GP 809 DIODE Text: RF Linear Amplifiers Freescale Semiconductor Device Data DL210 Rev. 3 3/2007 RF Product Portfolio freescale.com/rf Freescale Semiconductor offers RF Solutions a broad portfolio of RF products that utilize technologies such as LDMOS, GaAs, SiGe:C, RF CMOS	Original	DL210 TV booster diagram mhw* 820-1 DATASHEET pcb assembly 85501 application circuits of ic 74121 MHW6342TN motorola 18310 MHL9236MN DL210 010485 GP 809 DIODE	PDF
toko rcl Abstract: toko rcl COIL RCL TOKO data Toko variable coil 455KHz datasheet of IC OP 07 amplifer toko rcl 455khz toko rcl filter TOKO quad coil RCL TOKO Filter TOKO 10.7MHz crystal filter Text: TK83361M NARROW BAND FM IF IC FEATURES APPLICATIONS n Wide Operating Voltage Range 2.0 to 8.0V n RF Input Frequency up to 220 MHz n Low Supply Current 2.8mA, squelch off, 3.8mA, n n n n n n n squelch on Low External Component Count µ) Excellent Limiting Sensitivity (-3dB = 8dBµ	Original	TK83361M TK83361M single75 IC-231-TK11031 0798O0 toko rcl toko rcl COIL RCL TOKO data Toko variable coil 455KHz datasheet of IC OP 07 amplifer toko rcl 455khz toko rcl filter TOKO quad coil RCL TOKO Filter TOKO 10.7MHz crystal filter	PDF
CF739 Abstract: 7S66 1 928 300 599 marking MS "marking ms" Text: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!	OCR Scan	Q62702-F1215 OT-143 CF739 7S66 1 928 300 599 marking MS "marking ms"	PDF
Untitled Abstract: No abstract text available Text: SCA-16 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices SCA-16 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases	Original	SCA-16 28dBm. SCA-16 EDS-102425	PDF

M8301 Abstract: No abstract text available Text: S T M8301 S amHop Microelectronics C orp. Apr.28 2005 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel (N-C hannel) P R ODUC T V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) V DS S Max R DS (ON) ( m W ) ID 25 @ V G S = 10V	Original	M8301 M8301	PDF
Omron H3BA Abstract: smd transistor A6t omron relay 12VDC, IEC255 omron h3ba timer smd a6t double diode smd transistor A6a h3ba 5 pin relay 12vdc 4088 cross reference capillary rotary compressor RELAY OMRON LZN 203 Text: 2005 Components Catalogue Text 2005 Catalogue 1 Contents Welcome to the 2005 Omron Catalogue Section 1 – POWER RELAYS 8-9 10 - 168 Technical Information – Power & Signal Relays 10 - 31 Selection Guide 32 - 43 G5B 44 - 47 G5NB-E 48 - 51 G5SB 52 - 55 G6M	Original	S-164 OCB003 Omron H3BA smd transistor A6t omron relay 12VDC, IEC255 omron h3ba timer smd a6t double diode smd transistor A6a h3ba 5 pin relay 12vdc 4088 cross reference capillary rotary compressor RELAY OMRON LZN 203	PDF
Untitled Abstract: No abstract text available Text: Product Description SCA-6 Stanford Microdevices’ SCA-6 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between	Original	30dBm.	PDF
TRANSISTOR 132-gd Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n	OCR Scan	06o3H TRANSISTOR 132-gd TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes	PDF
Halbleiterbauelemente DDR Abstract: Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C Text: electronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz-und Kenndaten der in der DDR getertigten Halbleiterbauelemente. Die Kennwerte werden im allgemeinen für eine Umgebungs temperatur von 25 °C angegeben.	OCR Scan	6x10x12 Halbleiterbauelemente DDR Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C	PDF
Nitro Abstract: Nbb-400 84-1LMI NBB-400-D NBB-402 NBB-402-D NBB-402-E NBB-402T1 NBB-402T3 Text: Cascadable Broadband GaAs MMIC Amplifier NBB-402 DC-8 GHz 6000040 Rev. B Features 1 • • • • • Reliable Low-Cost HBT Design 15.0 dB Gain, +14.1 dBm P1dB @ 2 GHz High P1dB of +15.4 dBm at 6.0 GHz Single Power Supply Operation 50 Ω Input/Output Matched for High Frequency	Original	NBB-402 50-ohm 84-1LMI 10420-F Nitro Nbb-400 NBB-400-D NBB-402 NBB-402-D NBB-402-E NBB-402T1 NBB-402T3	PDF
Untitled Abstract: No abstract text available Text: S DU/D30N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS ON . R DS (ON) ( m W ) Max ID R ugged and reliable. 20V	Original	DU/D30N02 O-252 O-251 O-252AA O-252	PDF
MA2810 Abstract: NBB-302T1 NBB-302T3 84-1LMI DC-12 NBB-300-D NBB-302 NBB-302-D NBB-302-E RF Nitro Communications Text: Cascadable Broadband GaAs MMIC Amplifier NBB-302 DC-12 GHz 6000036 Rev. A Features • • • 1 • • Reliable Low-Cost HBT Design 12 dB Gain, +13.7 dBm P1dB @ 2 GHz High P1dB of +14 dBm at 6.0 GHz and +11.0 dBm at 14.0 GHz Single Power Supply Operation	Original	NBB-302 DC-12 50-ohm 84-1LMI 10420-F MA2810 NBB-302T1 NBB-302T3 NBB-300-D NBB-302 NBB-302-D NBB-302-E RF Nitro Communications	PDF
d30n02 Abstract: No abstract text available Text: S DU/D30N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS ON . R DS (ON) ( m W ) Max ID R ugged and reliable. 20V	Original	DU/D30N02 O-252 O-251 O-252AA Tube/TO-252 O-252 d30n02	PDF
Siemens DIODE E 1220 Abstract: No abstract text available Text: SIEMENS SPP30N03L SPB30N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type SPP30N03L Vds 30 V b 30 A SPB30N03L ffDS on @ VGS 0.028 O V/gs = 4.5V	OCR Scan	SPP30N03L SPB30N03L SPB30N03L P-T0220-3-1 P-T0263-3-2 Q67040-S4143-A2 Q67040-S4737-A3 Siemens DIODE E 1220	PDF

TRANSISTOR GF 122 Search Results

TRANSISTOR GF 122 Result Highlights (5)

TRANSISTOR GF 122 Datasheets Context Search

thermal conductive teflon

6P45S

TAA 691

transistor vergleichsliste

E6B-CWZ

Triac/TRIAC TAG 92

transistor c 6093

Untitled

toko rcl

toko rcl

TV booster diagram

toko rcl

CF739

Untitled

M8301

Omron H3BA

Untitled

TRANSISTOR 132-gd

Halbleiterbauelemente DDR

Nitro

Untitled

MA2810

d30n02

Siemens DIODE E 1220