TRANSISTOR FT 960 Search Results

TRANSISTOR FT 960 Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

TRANSISTOR FT 960 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: CD00001880 Rev 7.2 IN APPROVAL PAGE A ft RF power transistor the LdmoST family -D ra Technical Literature Alternate Identifier s Key process 6733 Product Development Dr ISO Definition aft CUSTOM ATTRIBUTES ft - Confidentiality Level Specification Public Technical Literature	Original	PDF	CD00001880 SD57060-01,
Untitled Abstract: No abstract text available Text: Part Number: Integra IB0912M600 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M600 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing	Original	PDF	IB0912M600 IB0912M600 IB0912M600-REV-NC-DS-REV-A
Untitled Abstract: No abstract text available Text: Part Number: Integra IB0912M350 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M350 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing	Original	PDF	IB0912M350 IB0912M350 IB0912M350-REV-NC-DS-REV-D
Untitled Abstract: No abstract text available Text: Part Number: Integra IB0912M500 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M500 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing	Original	PDF	IB0912M500 IB0912M500 IB0912M500-REV-NC-DS-REV-B
Untitled Abstract: No abstract text available Text: Part Number: Integra IB0912M210 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M210 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing	Original	PDF	IB0912M210 IB0912M210 IB0912M210-REV-NC-DS-REV-NC
Untitled Abstract: No abstract text available Text: Part Number: Integra IB0912M70 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912M70 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing	Original	PDF	IB0912M70 IB0912M70 IB0912M70-REV-NC-DS-REV-C
Untitled Abstract: No abstract text available Text: Part Number: Integra IB0912L30 TECHNOLOGIES, INC. Avionics Broadband 30W Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912L30 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under 450us-15%	Original	PDF	IB0912L30 IB0912L30 450us-15% IB0912L30-REV-NC-DS-REV-A
Untitled Abstract: No abstract text available Text: Part Number: Integra IB0912L70 TECHNOLOGIES, INC. L-Band JTIDS 70W Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB0912L70 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under 444x 7us on,	Original	PDF	IB0912L70 IB0912L70 IB0912L70-REV-NC-DS-REV-B
bd 142 transistor Abstract: No abstract text available Text: Part Number: Integra IB0912L200 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band JTIDS Transistor Class C Operation − High Efficiency The high power pulsed transistor device part number IB0912L200 is designed for systems operating over the instantaneous bandwidth of	Original	PDF	IB0912L200 IB0912L200 IB0912L200-REV-NC-DS-REV-C bd 142 transistor
nec 2532 Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor Text: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain	Original	PDF	2SC5014 2SC5014) 2SC5014-T2 nec 2532 NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Untitled Abstract: No abstract text available Text: Part Number: Integra IB1012S500 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB1012S500 is designed for systems operating over the instantaneous bandwidth of 1025-1150 MHz. While operating in class C mode under DME pulsing	Original	PDF	IB1012S500 IB1012S500 IB1012S500-REV-NC-DS-REV-NC
high power transistor 6 GHz Abstract: transistor package Text: BIPOLARICS INC. Part Number BPT23B06-23 SILICON MICROWAVE POWER TRANSISTOR Package 23: 0.230" 2 Lead Flange FEATURES: • P = 6 W @ 2.3 GHz • High Gain out GPE = 8.0 dB @ 2.3 GHz • High Gain Bandwidth Product ft = 6.5 GHz @ IC = 480 mA • High Reliability	Original	PDF	BPT23B06-23 BPT23B06-23 high power transistor 6 GHz transistor package
C200H-DA004 Abstract: CS1W-MD292 TRANSISTOR GUIDE DRT1-TS04P OC224 Text: ORDERING GUIDE PRODUCT PERFORMANCE STANDARDS OMRON devices that comply with EC Directives also conform to the related EMC standards so that they can be more easily built into other devices or the overall machine. The actual products have been checked for conformity to	Original	PDF	C200H-DA003 C200H-OD217 C200H-MAD01 C200H-IDS01-V1 C200H-DA004 C200H-IDS21 CS1W-MAD44 CS1W-AD041 CS1W-AD081 CS1W-DA041 C200H-DA004 CS1W-MD292 TRANSISTOR GUIDE DRT1-TS04P OC224
HAT1058C Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23 Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,	Original	PDF	notic50 SON3024-8 HAT1062G ADE-A08-003Q HAT1058C HAT2106G HAT1068C Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23

MRF860 Abstract: 2n2222 npn transistor 2N2222 rf Text: Order this data sheet by MRF860/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M RF860 NPN Silicon RF Power lYansistor Motorola Preferred Device CLASS A 800-960 MHz 13.7 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier	OCR Scan	PDF	MRF860/D 2PHX33728Q-0 MRF860 2n2222 npn transistor 2N2222 rf
transistor bd135 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3032 The RF Line NPN Silicon RF Power TVansistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • 21 W, 960 MHz RF POWER TRANSISTOR NPN SILICON	OCR Scan	PDF	TP3032 TP3032 BD135 transistor bd135
tp3026 Abstract: transistor ft 960 Text: 12E D I b3fc,?2S4 MOTOROLA SC QOflflESÖ XSTRS/R 3 \| F t 1 33-11 MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3026 Advance Inform ation The RF Line UHF P o w e r T ran sisto r 25 W — 960 M Hz UHF POWER TRANSISTOR The TP3026 is specifically designed fo r operation as the final stage in 960 M Hz mobile	OCR Scan	PDF	TP3026 TP3026 transistor ft 960
ic ca 747 Abstract: No abstract text available Text: ERICSSON ^ PTB 20189 1 Watt, 900-960 MHz Cellular Radio RF Power Transistor D escription The 20189 is an NPN, com mon em itter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP	OCR Scan	PDF
TRANSISTOR JG 92 Abstract: IFR 730 Text: H * m iG TU&Q rni 1 40 Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 S D 1 4 9 5 - 3 RF & MICROWAVE TRANSISTORS 9Ö0-960MHZ CLASS C, BASE STATIONS • ■ ■ ■ . . ■ CLASS C TRANSISTOR FREQUENCY VOLTAGE POWER OUT POWER GAIN EFFICIENCY	OCR Scan	PDF	0-960MHZ 960MHz SD14S5-03 SD1495-3 900-960MH2 960MH* 33S/S TRANSISTOR JG 92 IFR 730
transistor ft 960 Abstract: IC 7108 Text: ERICSSO N 0 PTB 20177 150 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20177 is a class AB, NPN. com mon em itter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP	OCR Scan	PDF
BF960 Abstract: t187 BF-960 BF960 TELEFUNKEN GDDS530 Telefunken u 237 BF 22 W transistor bf 237 BF 606 a0lv Text: oc TELEFUNKEN ELECTRONIC V fllC D 6 1 2 0 0 % DDDS530 *i • ALG6 T~3i - Xjr~ ■ miSPMMEN electronic BF 960 Creative Technologies j i N-Channel Dual Gate MOS-Fieldeffect Tetrode >Depletion Mode Applications: Input- and Mixerstages especially for UHFTV-tuners up to 900 MHz	OCR Scan	PDF	GDDS530 569-GS 000S154 HAL66 BF960 t187 BF-960 BF960 TELEFUNKEN Telefunken u 237 BF 22 W transistor bf 237 BF 606 a0lv
itt 2222 Abstract: tag l9 transistor 2222 030 capacitor philips ITT 2222 A 4312 020 36642 Philips 2222 capacitor electrolytic capacitor 47 capacitor j63 c9 38478 philips ceramic capacitors Text: PhHip^emiconductor^^^ _ bbSBIBl 003G12b TD7 H AP X ^Pjoduc^pecjficatjon UHF power MOS transistor ^ BLF544 N AMER P H I L I P S / D I S C R E T E bTE D PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures	OCR Scan	PDF	003G12b BLF544 OT171 MCA836 itt 2222 tag l9 transistor 2222 030 capacitor philips ITT 2222 A 4312 020 36642 Philips 2222 capacitor electrolytic capacitor 47 capacitor j63 c9 38478 philips ceramic capacitors
TRANSISTOR LC80 Abstract: No abstract text available Text: Wireless Power Transistor M a PH0810-60 60 Watts, 850-960 MHz Features • • • • • Outline Drawing Designed for Linear Amplifier Applications Class AB: -32dBc Typ 3rd IMD at 60 Watts PEP Common Emitter Configuration Internal Input Impedance Matching	OCR Scan	PDF	PH0810-60 -32dBc Sb42205 TRANSISTOR LC80
2SC959 Abstract: 2sc960 C959 2SA606 2SA607 transistor ft 960 2116 2SC999 Text: 2SA606, 607/2SC 959, 960 2SA606, 607/2SC959, 960 PNP/NPN x e 9 * > 7 y a v h 9 V '✓7.9 / P N P / N P N SILICON EP IT A X IA L TRANSISTOR f â H S iî l Î B f f l / A u d io Frequency Amplifier « « ./F E A T U R E S ♦ »»8 /PACKAGE DIMENSIONS lUmtmml	OCR Scan	PDF	2SA606, 2SA607 2SC959, 2SC960 607/2SC959, 2SA606 2SC960 2SCS09 2SC959 C959 transistor ft 960 2116 2SC999

TRANSISTOR FT 960 Search Results

TRANSISTOR FT 960 Result Highlights (6)

TRANSISTOR FT 960 Datasheets Context Search

Untitled

Untitled

Untitled

Untitled

Untitled

Untitled

Untitled

Untitled

bd 142 transistor

nec 2532

Untitled

high power transistor 6 GHz

C200H-DA004

HAT1058C

MRF860

transistor bd135

tp3026

ic ca 747

TRANSISTOR JG 92

transistor ft 960

BF960

itt 2222

TRANSISTOR LC80

2SC959