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    TRANSISTOR FREQUENCY 30GHZ GAIN 20 DB Search Results

    TRANSISTOR FREQUENCY 30GHZ GAIN 20 DB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR FREQUENCY 30GHZ GAIN 20 DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BP 2818

    Abstract: transistor K D 2499 UM 7222 G transistor GaAs FET s parameters
    Text: EC4711 Wide Band Power FET GaAs Field Effect Transistor Description The EC4711 is a Ku band Schottky barrier Field Effect Transistor with 0.5µm Aluminium gate. Individual via hole connection is made between each source pad and the gold plated back face metallization, through the


    Original     		PDF EC4711 EC4711 21dBm 23Ghz 18dBm 30GHz DSEC47117003 BP 2818 transistor K D 2499 UM 7222 G transistor GaAs FET s parameters

    EC2612

    Abstract: ec2612 pHEMT MAR 618 transistor
    Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00 ec2612 pHEMT MAR 618 transistor

    Untitled

    Abstract: No abstract text available
    Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00

    ec2612 phemt

    Abstract: EC2612
    Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor ¦ Chip size : 0.63 x 0.37 x 0.1 mm Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Marc-00 ec2612 phemt

    ec2612 phemt

    Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814
    Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00 ec2612 phemt pHEMT transistor 30GHz MAR 618 transistor LS 9814

    pHEMT transistor 30GHz

    Abstract: EC2612 ec2612 pHEMT 158467
    Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Marc-00 pHEMT transistor 30GHz ec2612 pHEMT 158467

    ec2612 pHEMT

    Abstract: pHEMT transistor 30GHz EC2612 TRANSISTOR 30GHZ
    Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron mobility transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26128099 ec2612 pHEMT pHEMT transistor 30GHz TRANSISTOR 30GHZ

    FMCW Radar

    Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
    Text: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.


    Original     		PDF 3800-Pirituba E-28760 DK-2750 FMCW Radar radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"

    Buffer Amplifier Ghz

    Abstract: THM2004J
    Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF THM2004J THM2004J 50-ohm TAHB09) 30GHz 1000MHz 100MHz Buffer Amplifier Ghz

    transistor T04

    Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER TRANSISTOR 30GHZ THM2004J TRANSISTOR C 608 Germanium Amplifier Circuit diagram Tachyonics
    Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF THM2004J THM2004J 50-ohm TAHB09) 30GHz 1000MHz 100MHz transistor T04 SiGe HBT GAIN BLOCK MMIC AMPLIFIER TRANSISTOR 30GHZ TRANSISTOR C 608 Germanium Amplifier Circuit diagram Tachyonics

    THM2003J

    Abstract: Tachyonics
    Text: PRELIMINARY Wideband Linear Amplifier THM2003J SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2003J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF THM2003J THM2003J 50-ohm TAHB09) 30GHz 1000MHz 100MHz Tachyonics

    9829 A

    Abstract: TARF2202 .7E8
    Text: SiGe HBT MMIC Wideband Linear Amplifier TARF2202 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2202 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF TARF2202 50-ohm TAHB09) 30GHz TARF2202 1900MHz 100MHz 9829 A .7E8

    XP1024-BD

    Abstract: XP1024-BD-000V XP1024-BD-EV1 29MPA0373 DM6030HK TS3332LD pHEMT transistor 30GHz
    Text: 26.0-31.0 GHz GaAs MMIC Power Amplifier P1024-BD April 2007 - Rev 17-Apr-07 Features Balanced Design Provides Good Output Match On-Chip Temperature Compensated Output Power Detector 32.0 dB Small Signal Gain +36.0 dBm Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF P1024-BD 17-Apr-07 MIL-STD-883 XP1024-BD 15ers. XP1024-BD-000V XP1024-BD-EV1 XP1024 XP1024-BD XP1024-BD-000V XP1024-BD-EV1 29MPA0373 DM6030HK TS3332LD pHEMT transistor 30GHz

    Untitled

    Abstract: No abstract text available
    Text: 26.0-31.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 29MPA0373 Features Chip Device Layout tio n Balanced Design Provides Good Output Match On-Chip Temperature Compensated Output Power Detector 32.0 dB Small Signal Gain +36.0 dBm Third Order Intercept OIP3


    Original     		PDF 05-May-05 29MPA0373 MIL-STD-883

    phemt transistor 30Ghz

    Abstract: ID214
    Text: 26.0-31.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 29MPA0373 Features Chip Device Layout tio n Balanced Design Provides Good Output Match On-Chip Temperature Compensated Output Power Detector 32.0 dB Small Signal Gain +36.0 dBm Third Order Intercept OIP3


    Original     		PDF 05-May-05 29MPA0373 MIL-STD-883 phemt transistor 30Ghz ID214

    IR TRansmitter and receiver wikipedia

    Abstract: SIEMENS 565-2 white noise Generator 1GHz ECC85 samsung colour tv kit circuit diagram Kathrein Antennas elektra c radio diagram philips rf manual Funkamateur varactor diode model in ADS
    Text: Semiconductors Appendix RF Manual 6th edition May 2005 date of release: May 2005 document order number: 9397 750 15125 Contents 1. RF Application-Basics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


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    PPH25X

    Abstract: No abstract text available
    Text: Contents Products . 3 Foundry open processes. 12 GaN current packaging solutions and demo boards. 14


    Original     		PDF

    TRANSISTOR SMD MARKING CODE w2

    Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
    Text: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright


    Original     		PDF

    Nordmende

    Abstract: Funkamateur Kathrein Antennas ECC85 TBA810 AMPLIFIER TBA810 Kathrein LFPAK package 5 ferrite rod antenna SiC PIN diode Pspice model
    Text: Appendix RF Manual 7th edition November 2005 date of release: November 2005 document order number: 9397 750 15371 Contents 1. Thermal design considerations for SMD discretes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


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    mmds down converter

    Abstract: HMC394LP4 Crystal Radio MMIC Downconverter ku band HMC409 c-Band mmic core chip ku vsat "buffer amplifier" HMC394 HMC406MS8G HMC407MS8G
    Text: OFF-THE-SHELF INSIDE. HITTITE MICROWAVE CORPORATION AUTUMN 2001 1 Watt and 0.5 Watt Power Amplifiers at 1.9 GHz, 2.4 GHz, 3.5 GHz and 5.8 GHz Now Available! New High Efficiency MMIC GaAs InGaP HBT Designs for +3V and +5V Platforms Hittite is expanding its GaAs InGaP HBT product line by adding eight new power


    Original     		PDF OC-48 OC-192 mmds down converter HMC394LP4 Crystal Radio MMIC Downconverter ku band HMC409 c-Band mmic core chip ku vsat "buffer amplifier" HMC394 HMC406MS8G HMC407MS8G

    Sony Semiconductor Replacement Handbook 1991

    Abstract: 2sc5088 horizontal transistors tcxo philips 4322 20000w audio amplifier circuit diagram replacement for 2sc5088 horizontal transistors motorola power fet rf databook 2SK170BL Funkamateur transistor 1060 schematic diagram tv sony
    Text: Philips RF Manual product & design manual for RF small signal discretes 3 edition July 2003 rd / discretes/documentation/rf_manual Document number: 4322 252 06384 Date of release: July 2003 3rd edition


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    MOSFET TRANSISTOR SMD MARKING CODE nh

    Abstract: ASR-10SS Kathrein Antennas Kathrein gsm ANTENNA murata filter cfm 455 d TRANSISTOR C 6090 EQUIVALENT 20000w audio amplifier schematic circuit diagram marking code C1H mmic murata filter cfm 455 k A08 smd transistor
    Text: 4th edition RF Manual, appendix Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4th edition March 2004 APPENDIX / documentation/rf_manual Document number: 4322 252 06388


    Original     		PDF BF1107/8 BGA2715-17 BGA6589 MOSFET TRANSISTOR SMD MARKING CODE nh ASR-10SS Kathrein Antennas Kathrein gsm ANTENNA murata filter cfm 455 d TRANSISTOR C 6090 EQUIVALENT 20000w audio amplifier schematic circuit diagram marking code C1H mmic murata filter cfm 455 k A08 smd transistor

    super bonder 325

    Abstract: ls40f
    Text: EC1840 4 0 G H z LOW N O I SE FET G a A s F I E L D E F F E C T T R A N S I S T O R NOT FOR NEW DESIGNS. USE EC2827 REPLACEMENT. FEATURES • Low noise figure : N F min = 1.5dB typ. at 18GHz N F min. = 3dB (typ.) at 40GHz • High associated gain : G a = 11.5dB (typ.) at 18GHz


    OCR Scan     		PDF EC1840 EC2827 18GHz 40GHz 40GHz. 25nmn EC1840-99A/00 super bonder 325 ls40f

    RF Transistor s-parameter

    Abstract: bipolar transistor s-parameter lm 7803 s-parameter RF POWER TRANSISTOR NPN BJT with i-v characteristics transistor D 5032 bipolar transistor ghz s-parameter 60Ghz TRANSISTOR 30GHZ qubic4
    Text: IEEE BCTM 10.2 An S-parameter Technique for Substrate Resistance Characterization of RF Bipolar Transistors S.D. Harker*, R.J. Havenst , J.C.J. Paasschenst , D. Szmyd*, L.F. Tiemeijer*, and E.F. Weagel* ‘ Philips Semiconductors, 9201 Pan American Frwy. NE, Albuquerque, NM 87113, USA


    OCR Scan     		PDF