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    TRANSISTOR FOR AUDIO USE Search Results

    TRANSISTOR FOR AUDIO USE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR FOR AUDIO USE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HZIP25

    Abstract: LA47202P F35C
    Text: Ordering number : ENA0508 Monolithic Linear IC LA47202P Four-Channel BTL Power Amplifier for Car Audio Systems Overview The LA47202P is a 4-channel BTL power amplifier IC developed for use in car audio applications. The LA47202P adopts a pure complementary output stage circuit structure with a v-pnp transistor for the high side and an npn transistor for the


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    ENA0508 LA47202P LA47202P A0508-8/8 HZIP25 F35C PDF

    3236A

    Abstract: No abstract text available
    Text: Ordering number : ENA0508 Monolithic Linear IC LA47202P Four-Channel BTL Power Amplifier for Car Audio Systems Overview The LA47202P is a 4-channel BTL power amplifier IC developed for use in car audio applications. The LA47202P adopts a pure complementary output stage circuit structure with a v-pnp transistor for the high side and an npn transistor for the


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    ENA0508 LA47202P LA47202P A0508-8/8 3236A PDF

    NTE157

    Abstract: NTE39
    Text: NTE157 Silicon NPN Transistor Audio Power Amp, High Voltage Converter Compl to NTE39 Description: The NTE157 is a silicon NPN transistor in a TO126 type package designed for use in line–operated equipment such as audio output amplifiers, low–current, high–voltage converters, and AC line relays.


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    NTE157 NTE39) NTE157 100mA 10MHz 10MHz, 100kHz 100mA, NTE39 PDF

    Untitled

    Abstract: No abstract text available
    Text: Regulator ICs System power supply for CD playerequipped audio systems BA3950A With 13.3V external transistor required , 12V, 10V, and 5.6V outputs, the BA3950A power supply IC is best suited for CD player-equipped audio systems. FApplications CD player-equipped audio systems


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    BA3950A BA3950A SIP-M12 BA395with PDF

    ba3950a

    Abstract: No abstract text available
    Text: Regulator ICs System power supply for CD playerequipped audio systems BA3950A With 13.3V external transistor required , 12V, 10V, and 5.6V outputs, the BA3950A power supply IC is best suited for CD player-equipped audio systems. FApplications CD player-equipped audio systems


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    BA3950A BA3950A SIP-M12 PDF

    sanken audio

    Abstract: sanken LAPT "Sanken Rectifiers" "Sanken Electric"
    Text: 2SC6145 Audio Amplification Transistor Features and Benefits Description LAPT High frequency multi emitter transistor Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = 260 V


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    2SC6145 2SA2223 2SC4382A sanken audio sanken LAPT "Sanken Rectifiers" "Sanken Electric" PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2223 Audio Amplification Transistor Features and Benefits Description LAPT High frequency multi emitter transistor Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = –260 V


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    2SA2223 2SC6145 2SA1668A PDF

    BD140 pnp transistor

    Abstract: TRANSISTOR NPN BD140 BD136 BD140 npn TRANSISTOR PNP BD140 BD140 transistor bd138 TRANSISTOR BD140 BD138 BD140 circuits
    Text: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD136/138/140 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 BD136 BD138 BD140 BD140 pnp transistor TRANSISTOR NPN BD140 BD136 BD140 npn TRANSISTOR PNP BD140 BD140 transistor bd138 TRANSISTOR BD140 BD138 BD140 circuits PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD136/138/140 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 BD136 BD138 BD140 PDF

    transistor 45 f 122

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP53T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for


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    OT-223 BCP56 BCP53T1 inch/1000 BCP53T3 inch/4000 BCP53T1 transistor 45 f 122 PDF

    NTE198

    Abstract: No abstract text available
    Text: NTE198 Silicon NPN Transistor High Voltage Power Transistor Description: The NTE198 is a high voltage silicon NPN power transistor in a TO220 type package designed for use as a line operated audio output amplifier, switchmode power supply driver, and other switchmode


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    NTE198 NTE198 PDF

    d1117

    Abstract: TRANSISTOR 2202 BL 2SA1988 C10535E C10943X MEI-1202 MP-88
    Text: DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. 1.0 4 20.5MAX. 5.0 • High Voltage VCEO = −200 V


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    2SA1988 2SA1988 MP-88 d1117 TRANSISTOR 2202 BL C10535E C10943X MEI-1202 MP-88 PDF

    BD138G

    Abstract: BD136 BD136 pin bd135 to-126 BD139 PIN DATA power transistor bd136 QW-R204-013 NPN Transistor Characteristics bd136 BD140l
    Text: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR „ DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD136-138-140 O-251 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 O-126 O-251 BD138G BD136 BD136 pin bd135 to-126 BD139 PIN DATA power transistor bd136 QW-R204-013 NPN Transistor Characteristics bd136 BD140l PDF

    mje521 npn

    Abstract: No abstract text available
    Text: ON Semiconductor MJE521 Plastic Medium−Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers


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    MJE521 MJE371 mje521 npn PDF

    MJE521

    Abstract: MJE371
    Text: ON Semiconductor MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers


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    MJE521 MJE371 r14525 MJE521/D MJE521 MJE371 PDF

    transistor BD140

    Abstract: power transistor bd136 to126 case transistor bd136
    Text: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR  1 DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD136-138-140 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 O-126C BD136L-x-T60-K BD136G-x-T60-K BD136L-x-TM3-T transistor BD140 power transistor bd136 to126 case transistor bd136 PDF

    BUS48AP

    Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD166 BD165 BD166 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUS48AP 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR „ DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for


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    HE8550 HE8550 HE8050 HE8550-x-AB3-R HE8550-x-AE3-R HE8550-x-T92-B HE8550-x-T92-K HE8550-x-T9N-B HE8550-x-T9N-K HE8550L-x-AB3-R PDF

    he8050l

    Abstract: audio output TRANSISTOR NPN
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


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    HE8050 HE8050 HE8550 O-92NL HE8050L HE8050-x-T9N-A-B HE8050L-x-T9N-A-B HE8050-x-T9N-A-K HE8050L-x-T9N-A-K O-92NL he8050l audio output TRANSISTOR NPN PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8051 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR „ DESCRIPTION The UTC HE8051 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


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    HE8051 HE8051 HE8551 HE8051L-x-T92-B HE8051L-x-T92-K HE8051G-x-T92-B HE8051G-x-T92-K QW-R201-046 HE80lues PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR  DESCRIPTION 1 The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD136-138-140 BD136/BD138/BD140 BD135/BD137/ BD139. O-251 OT-223 O-126 O-126C BD136L-xx-T60-K BD136G-xx-T60-K PDF

    he8050

    Abstract: HE8550 HE8050G
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR „ DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


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    HE8050 HE8050 HE8550 HE8050-x-AB3-R HE8050-x-AE3-R HE8050-x-T92-B HE8050-x-T92-K HE8050-x-T9N-B HE8050-x-T9N-K HE8050L-x-AB3-R HE8550 HE8050G PDF

    transistor K52

    Abstract: germanium transistor pnp GERMANIUM SMALL SIGNAL PNP TRANSISTORS mullard germanium pnp germanium transistor mullard 160 germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS power ac audio transistor small signal transistor
    Text: EDISW A N MAZDA X C IO I AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE GEN ERAL The X C IO I is a germanium pnp junction type transistor suitable for use in Audio Output stages. The element of the transistor is hermetically sealed in a small can.


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP53T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for


    OCR Scan
    BCP53T1 OT-223 BCP56 BCP53T1 inch/1000 PDF