Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR F52 Search Results

    TRANSISTOR F52 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F52 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LDTB123YLT1G

    Abstract: LDTB123YLT3G
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • • LDTB123YLT1G Applications Inverter, Interface, Driver 3 Features 1 Built-in bias resistors enable the configuration of an


    Original     		PDF LDTB123YLT1G OT-23 LDTB123YLT1G LDTB123YLT3G

    dtc114ek

    Abstract: B 560 PNP TRANSISTOR Transistor circuits 2SA1037AK
    Text: D I G I TA L T R A N S I S T O R A R R AY S DUAL ISOLATED NPN/PNP TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,


    Original     		PDF SC-88, SC-74 SC-75A SC-70 SC-59 SC-59 SC-88A SC-75A, dtc114ek B 560 PNP TRANSISTOR Transistor circuits 2SA1037AK

    k1647

    Abstract: TRANSISTOR W 59 transistor F13 70 SC-59 DIODE S4 75a transistor F13 S4 75A transistor F13 10
    Text: D I G I TA L T R A N S I S T O R A R R AY S SINGLE PNP TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC, INVERTERS, DRIVERS, SWITCHING CIRCUITS


    Original     		PDF MUN2111 MUN2112 MUN2113 DTA114EKA DTA124EKA DTA144EKA SC-75A, SC-70, SC-59 SC-75A k1647 TRANSISTOR W 59 transistor F13 70 SC-59 DIODE S4 75a transistor F13 S4 75A transistor F13 10

    lm733

    Abstract: tunable crystal oscillator cd4051 space C-2350N-14 LT1004-2 LT1016 LT1394 T1116 1N4148 2N2369
    Text: DESIGN FEATURES A 7ns, 6mA, Single-Supply Comparator Fabricated on Linear’s 6GHz Complementary Bipolar Process by Jim Williams and Brian Hamilton Introduction The LT1394 is an ultrafast 7ns , low power (6mA), single-supply comparator designed to operate on either 5V


    Original     		PDF LT1394 LT1394 LTC1401 LTC1404 CD4051, 74HC4051 LTC1391) LTC1401 lm733 tunable crystal oscillator cd4051 space C-2350N-14 LT1004-2 LT1016 T1116 1N4148 2N2369

    DTB123YK

    Abstract: DTB123YU T106 T146 AGi56 transistor f52
    Text: 500mA / 50V Digital transistors with built-in resistor DTB123YU / DTB123YK  Applications Inverter, Interface, Driver  Dimensions (Unit : mm) 2.0 DTB123YU  Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors


    Original     		PDF 500mA DTB123YU DTB123YK DTB123YU SC-70 R0039A DTB123YK T106 T146 AGi56 transistor f52

    BT816

    Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
    Text: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF mm/13" O-92S) BT816 TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728

    transistor MARKING CODE RJ

    Abstract: transistor 531
    Text: DTB123YK Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm available in SMT3 (SMT, SC-59) package package marking: DTB123YK; F52 DTB123YK (SMT3) a built-in bias resistor allows inverter circuit configuration without external input resistors


    OCR Scan     		PDF DTB123YK SC-59) DTB123YK; DTB123YK transistor MARKING CODE RJ transistor 531

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    F5211

    Abstract: 24 LC 0261 MMBR521L
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M B R 521L T 1* MRF521 M R F 5 2 1 1LT1 The RF Line PNP Silicon H igh-Frequency Transistor ‘ Motorola Preferred Device Designed primarily for use in the high-gain, !ow-noise small-signal amplifiers for operation up to 3.5 GHz. Also usable ¡n applications requiring fast switching


    OCR Scan     		PDF MMBR521LT1) MRF521, MRF5211LT1) MRF521 MMBR521LT1 MRF521 F5211 24 LC 0261 MMBR521L

    fy sot 143

    Abstract: Transistor motorola 513 TO-126 MMBR521 MMBR521L CASE318-07 MMBR521LT1 MRF521 MRF5211 MRF5211LT1 TO-236AA
    Text: HOTOROLA SC XSTRS/R F bTE b3b72SH T> G100147 SSk «nOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBR 5 2 1 LT 1 * MRF 521 MRF 5 2 1 1 LT 1 The RF Line PNP Silicon High-Frequency Transistor •Motorola P r r t T f d D«vtce Designed primarily for use in the high-gain, low-noise small-signal amplifiers


    OCR Scan     		PDF b3b725H G100147 110Tb MMBR521LT1) MRF521, MRF5211LT1) OT-23 fy sot 143 Transistor motorola 513 TO-126 MMBR521 MMBR521L CASE318-07 MMBR521LT1 MRF521 MRF5211 MRF5211LT1 TO-236AA

    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IN TE G R A TE D C lR C U fT S TD F5242T Brushless DC motor drive circuit Preliminary specification File under Integrated Circuits, IC11 Philips Semiconductors 1997 Apr 23 P H IL IP S PHILIPS P h ilip s S e m ic o n d u c t o r s P re lim in a ry s p e c if ic a t io n


    OCR Scan     		PDF F5242T TDF5242T SCA54

    electro magnetic brake power circuit diagram

    Abstract: FETs Field Effect Transistors TDA5242 "Brushless DC Motor Drive Circuit" smps repair BD434 S028 TDF5242T
    Text: Philips Semiconductors Preliminary specification Brushless DC motor drive circuit TDF5242T FEATURES APPLICATIONS • Full-wave commutation without position sensors • High-power applications, for instance: • Built-in start-up circuitry - high-end hard diskdrives


    OCR Scan     		PDF TDF5242T TDF5242T electro magnetic brake power circuit diagram FETs Field Effect Transistors TDA5242 "Brushless DC Motor Drive Circuit" smps repair BD434 S028

    case 317-01

    Abstract: MRF2369 RF Transistor Selection transistor MRF536 MRF931 MRF536 MRF911 transistor bfr96 2N5109 motorola MRF587
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 case 317-01 RF Transistor Selection transistor MRF536 MRF931 MRF536 MRF911 transistor bfr96 2N5109 motorola MRF587

    MRF522

    Abstract: MRF524 MRFC521 MRF5211 MRF5211L mrfc case 317-01 MRF521 motorola MRF microlab slug tuner SF
    Text: 12E D I b3b755M G0Ö7732 M OTOROL A MO TO ROLA SC T | XSTRS/R F S E M IC O N D U C T O R TECHNICAL DATA MRF521 M RFC521 M RF522 M R F524 M R F52 11 ,L The RF Line P N P S ilic o n H ig h -F re q u e n cy T ra n s is to rs . designed primarily for use in the high-gain, low-noise sm all-signal amplifiers for


    OCR Scan     		PDF ti3ti755M OT-143 MRF5211) MRF5211L) MRF522 MRF524 MRFC521 MRF5211 MRF5211L mrfc case 317-01 MRF521 motorola MRF microlab slug tuner SF

    Untitled

    Abstract: No abstract text available
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date: 22rid/Nov. '01 i MITSUBISHI RF POWER MODULE - RA45H4452M ELETROSTATIC SENSITIVE DEVICES Silicon MOS FET Power Amplifier, 440~520MHz 45W MOBILE RADIO OUTLINE DRAWING MAXIMUM RATINGS SYMBOL V dd


    OCR Scan     		PDF 22rid RA45H4452M 520MHz 25deg 50ohm 440-520MHz ZI-50ohm

    TTL LS 7400

    Abstract: ttl 7400 marking WV1 transistor TTL 7400 national semiconductor 74H Logic Family Specifications IC 7400 nand gate MIL-STD-806B LS TTL family characteristics transistor f259 internal structure 74LS00 nand gate
    Text: Introduction National Semiconductor Introduction FAST, an acronymn for Fairchild Advanced Schottky TTL, is a high-speed, low-power logic family that achieves speeds typically 30% faster than the Schottky family with a corre­ sponding power reduction of approximately 75%. It is fabri­


    OCR Scan     		PDF

    transistor f52

    Abstract: No abstract text available
    Text: Transistors Digital transistors built-in resistors D T B 1 2 3 Y K /D T B 1 2 3 Y C /D T B 1 2 3 Y S •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit 2 .9 ± 0 .2 DTB123YK


    OCR Scan     		PDF DTB123YC DTB123YK DTB123YK DTB123YC DTB123YS DTB123YK/DTB123YC/DTB123YS transistor f52

    2N5109 motorola

    Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 MRF587 44A-01 2N3959 2N3960 2N5835 MM4049* MRF914 2N5943 2N5109 motorola BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A

    PBL3717

    Abstract: DDQ1710 LM 3717 3717N
    Text: _ ERICSSON COMPONENTS INC lb E D • 3373bflD 0001700 t> ■ ERICSSON ^ September 1989 T-52-Ì3-ZS _ :_ PBL3717 Stepper Motor Drive Circuit Description PBL 3717 Is a bipolar monolithic circuit Intended to control and drive the current In one


    OCR Scan     		PDF 3373bflD PBL3717 3717N DDQ1710 LM 3717 3717N

    Untitled

    Abstract: No abstract text available
    Text: Transistors Digital transistors built-in resistors D T B 1 2 3 Y K /D T B 1 2 3 Y C /D T B 1 2 3 Y S •F eatu re s 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (se e th e equivalent cir­


    OCR Scan     		PDF DTB123YK

    0058464

    Abstract: RA07M4452M E1140
    Text: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA07M4452M Silicon MOS FET Power Amplifier, 440-520MHz 7W PORTABLE RADIO 1 2 3 4 5 SYMBOL V dd V gg Pin Po Tc OP Tstg PARAMETER SUPPLY VOLTAGE GATE BIAS VOLTAGE


    OCR Scan     		PDF RA07M4452M 440-520M 25deg 50ohm 440-520MHz Zh50ohm 0058464 RA07M4452M E1140

    2n5835

    Abstract: 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF502 MRF965 low noise transistor cross motorola 2N3866 2n5160
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 2n5835 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF965 low noise transistor cross motorola 2N3866 2n5160