Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICO N TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic j | | | Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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KST1009F1/F2/F3/F4/F5
100MHz
KST1009F1
KST1009F2
KST1009F3
KST1009F4
KST1009F5
KST1009F1
KST1009F2
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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OCR Scan
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KST1009F1/F2/F3/F4/F5
OT-23
KST1009F1
KST1009F2
KST1009F3
KST1009F4
KST1009F5
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MRF5160
Abstract: F5160 MRF*5160
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5160 The RF Line PNP Silicon High Frequency Transistor lc = -400 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR PNP SILICON . . . designed for am plifier, oscillator or frequency m ultiplier applications in industrial
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F5160
MRF3866
MRF5160
MRF5160
F5160
MRF*5160
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V23990-P629-F56-PM
Abstract: V23990-P629F
Text: V23990-P629-F56-PM final data sheet flow0 V23990-P629-F56-01-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition P629-F56 1200V/25A Symbol Datasheet values Unit max. Transistor H-bridge IGBT Transistor H-Brücke(IGBT) Collector-emitter break down voltage
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V23990-P629-F56-PM
V23990-P629-F56-01-14
P629-F56
200V/25A
V23990-P629F56
V23990-P629-F56-PM
V23990-P629F
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Untitled
Abstract: No abstract text available
Text: V23990-P629-FXX-PM final data sheet V23990-P629-F54-01-14 flow0 Maximum Ratings / Höchstzulässige Werte Parameter Condition P629-F54 1200V/25A Symbol Datasheet values Unit max. Transistor H-bridge IGBT Transistor H-Brücke(IGBT) Collector-emitter break down voltage
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V23990-P629-FXX-PM
V23990-P629-F54-01-14
P629-F54
200V/25A
90-P629F54
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d1758
Abstract: Transistor d1758 transistor F5 2SD1758F5 2SD1758 E 32 TRANSISTOR d1758 s d1758 transistor transistors d1758
Text: 2SD1758F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package package marking: D1758*t), where ★ is hFE code and □ is lot number general purpose transistor with ratings as follows: — 2SD1758F5 (CPT F5) o 5.1 1' • X
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2SD1758F5
SC-63)
D1758
2SD1758F5
2SD1758
Transistor d1758
transistor F5
E 32 TRANSISTOR
d1758 s
d1758 transistor
transistors d1758
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR M O D U L E three phases bridge type QF50AA40/60 Q F 50A A is a six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The
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QF50AA40/60
400/600V
QF50AA
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PDF
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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D1758
Abstract: Transistor d1758 2SD1758F5 d1758 transistor 2SD1758
Text: 2SD1758F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D1758^Q, where ★ is hFE code and □ is lot number • general purpose transistor with ratings as follows: — v c e o = 32 2SD1758F5 (CPT F5)
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2SD1758F5
SC-63)
D1758
2SD1758F5
temperature00
2SD1758
Transistor d1758
d1758 transistor
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F5 MARK
Abstract: marking f3 sot-23 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5 marking code F3
Text: KST1009F1/F2/F3/F4/F5 KST1009F1/F2/F3/F4/F5 AM/FM RF Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage
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KST1009F1/F2/F3/F4/F5
OT-23
F5 MARK
marking f3 sot-23
KST1009F1
KST1009F2
KST1009F3
KST1009F4
KST1009F5
marking code F3
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1 /F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation
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KST1009F1
KST1009F1
KST1009F2
KST1009F3
KST1009F4
KST1009F5
KST1009F2
KST1009F3
KST1009F4
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transistor f1
Abstract: MARKING CODE f5 F5 marking code F5 MARK MARKING CODE CCB am fm rf amplifier marking CODE F2 f1 transistor mark KST1009F2 KST1009F3
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1 /F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation
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KST1009F1
OT-23
KST1009F1
KST1009F2
KST1009F3
KST1009F4
KST1009F5
transistor f1
MARKING CODE f5
F5 marking code
F5 MARK
MARKING CODE CCB
am fm rf amplifier
marking CODE F2
f1 transistor mark
KST1009F2
KST1009F3
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 25 5 50 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage
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KST1009F1/F2/F3/F4/F5
OT-23
KST1009F1
KST1009F2
KST1009F3
KST1009F4
KST1009F5
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RN1901FS
Abstract: RN1902FS RN1903FS RN1904FS RN1905FS RN1906FS RN2901FS RN2906FS
Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN1901FS
RN1906FS
RN1902FS
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RN1904FS
RN1905FS
RN2901FS
RN2906FS
RN1903FS
RN1906FS
RN2906FS
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RN1903FS
Abstract: RN1902FS RN1901FS RN1904FS RN1905FS RN1906FS RN2901FS RN2906FS
Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN1901FS
RN1906FS
RN1902FS
RN1903FS
RN1904FS
RN1905FS
RN2901FS
RN2906FS
RN1903FS
RN1906FS
RN2906FS
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Untitled
Abstract: No abstract text available
Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN1901FS
RN1906FS
RN1902FS
RN1903FS
RN1904FS
RN1905FS
RN2901FS
RN2906FS
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Untitled
Abstract: No abstract text available
Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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Original
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RN1901FS
RN1906FS
RN1902FS
RN1903FS
RN1904FS
RN1905FS
RN1902FS
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PDF
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Untitled
Abstract: No abstract text available
Text: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm
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RN1901FS
RN1906FS
RN1902FS
RN1903FS
RN1904FS
RN1905FS
RN1905FS
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PDF
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LDTB123YLT1G
Abstract: LDTB123YLT3G
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • • LDTB123YLT1G Applications Inverter, Interface, Driver 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTB123YLT1G
OT-23
LDTB123YLT1G
LDTB123YLT3G
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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PDF
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Di 762 transistor
Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
Text: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System
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PH1920-33
lN4245
73050258-S
Di 762 transistor
transistor a015
transistor npn a 1930
wacom connector
wacom
33w NPN
13MM
PH1920-33
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor Logic level FET _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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BUK542-100A/B
BUK542
-100A
-100B
OT186
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PDF
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Untitled
Abstract: No abstract text available
Text: fl SIGNETICS INTEGRATED CIRCUITS 54H00 Series 74H00 Series The 54H00/74H00 logic family is high speed TTL III. These transistor-transistor logic circuits were designed for general purpose applications. They have good external noise immunity and high fan-out.
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54H00
74H00
54H00/74H00
C-14-LEAD
-16-LEAD
D-14-LEAD
54H00/C
2-In16-LEAD
16-LEAD
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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