Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR F151 Search Results

    TRANSISTOR F151 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F151 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F1510

    Abstract: No abstract text available
    Text: polyfet rf devices F1510 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF F1510 F1510

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1516 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF F1516 Temperatur11

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1510 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF F1510

    F1516

    Abstract: No abstract text available
    Text: polyfet rf devices F1516 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF F1516 F1516

    Q62702-F1519

    Abstract: No abstract text available
    Text: BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 771W SOT-323 RBs Q62702-F1519 1=B 2=E


    Original     		PDF OT-323 Q62702-F1519 S21/S12| Dec-11-1996 Q62702-F1519

    matsua stepping motors

    Abstract: transistor c32
    Text: Programmable Controllers SIGMA Ultra-compact high performance PLC High speed, High capacity, and New functions - V3 launched for new performance stage Actual size: W30 x H90 × D60 mm W1.181 × H3.543 × D2.362 (inch) These materials are printed on ECF pulp.


    Original     		PDF FPG-C32T2H FPG-C28P2H FPG-C32T2HTM FPG-C28P2HTM ARCT1B208E-2 ARCT1B208E-2 matsua stepping motors transistor c32

    Panasonic PLC FP communication

    Abstract: SIGMA RELAY
    Text: FPS Sigma Series Programmable Controllers 09/2008 FPS (Sigma) The next generation compact PLC Highlights State-of-the-art PLC technology in the most compact size plus the ability to communicate via all important modern media characterize the FPS (Sigma). With its two 100kHz pulse outputs, four high speed counters that function at up to 50kHz for


    Original     		PDF 100kHz 50kHz RS232C RS485, RM1205-9, Panasonic PLC FP communication SIGMA RELAY

    transistor Bf 966

    Abstract: No abstract text available
    Text: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type Pin Configuration 1= B Q62702-F1519 2=E II CO RBs o BF 771W


    OCR Scan     		PDF OT-323 Q62702-F1519 150it transistor Bf 966

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 1= B Q62702-F1519 Ö II CO RBs LU II CM


    OCR Scan     		PDF Q62702-F1519 OT-323 IS21el2 G12171D

    Transistor BFR 135

    Abstract: Transistor BFR Transistor BFR 35 transistor K 1412
    Text: SIEMENS BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f f = 8GHz F = 1.3dB at 900MHz 1=B 11 m Q62702-F1510 o li RCs CO BFR 193W 10 ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz OT-323 Q62702-F1510 Transistor BFR 135 Transistor BFR Transistor BFR 35 transistor K 1412

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    MRF151G

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		PDF MRF151G MRF151G

    TRANSISTOR BC 553

    Abstract: T151 T810
    Text: 1DI3OMA-O5O 30a POWER TRANSISTOR MODULE Features • h F E ^ 'S l ' High DC Current Gain • Kfl'Sijv,' • Insulated Type High speed switching • f f liÊ • A pplications Pow er Switching • M otor Brake in Inverter • Maximum Ratings and Characteristics


    OCR Scan     		PDF E82988 l95t/R89 TRANSISTOR BC 553 T151 T810

    MRF151G

    Abstract: L8776 Nippon capacitors rf amplifier circuit mrf151g
    Text: MOTOROLA O rder this docum ent by M RF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF151G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		PDF RF151G/D MRF151G L8776 Nippon capacitors rf amplifier circuit mrf151g

    Untitled

    Abstract: No abstract text available
    Text: D 1 O 2 O A - O 2 O 2 a / < 9 — !> ' Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • High Current • High DC Current Gain • Non Insulated Typ e : A p p lic a tio n s f High Power Switching • ftE ffW R S IK Uninterruptible Power Supply


    OCR Scan     		PDF 30S3-% I95t/R89

    2DI5OZ-12O

    Abstract: B381 IB07
    Text: 2DI5OZ-12O 50A l— ; u POWER TRANSISTOR MODULE : Features > K 9 ftE H ig h V o lt a g e * 7 >; — U — KF*3/K Including Free W heeling Diode * A S O * s'/ a ^ v Excellent Safe Operating Area Insulated Type I Applications • Jz'K 'tJX 'f "jJ- 's y High Power Switching


    OCR Scan     		PDF 2DI5OZ-12O E82988 l95t/R89 Shl50 B381 IB07

    JCS7

    Abstract: No abstract text available
    Text: 1 D I 2 4 A - l- 5 240A ) 5 u : Outline Drawings POWER TRANSISTOR MODULE • ¡K H t: : F e a tu re s • ÜSHŒ H ig h V oltage • 7 U — sfc-f 'J :+ — K r t H • ASO In c lu d in g Free W h e e lin g 'D io d e E xcellent Safe O p e ra tin g Area


    OCR Scan     		PDF A88-7681 JCS7

    Untitled

    Abstract: No abstract text available
    Text: 6 D I 1 0 A - 0 5 CKIOA s < r7 — Y = 7 > i > 7 > 9 :Z i > i . — ) V POWDER TRANSISTOR MODULE ! Features • 7 'J - * > f U ' s ' ) ' ? * * - K r t f l* • h F E *''fiiv .' • ife f& Jfi In c lu d in g F ree W h e e lin g D io c H ig h D C C u rre n t G ain


    OCR Scan     		PDF

    transistor f151

    Abstract: No abstract text available
    Text: 6DI15A-05005A / < T7 — ' Ì k ± s \ r7 — ;E ' > i L — J l' : Outline Drawings =l — ) V POWER TRANSISTOR MODULE 17 7.6 T 7 7I 7I7 JA B 3.E A 3.E |3& [3.Ç • iN N i: : F e a tu re s • y U — i ï ' f 'J + — K rtJ E In c lu d in g Free W h e e lin g D iode


    OCR Scan     		PDF 6DI15A-05005A) E82988 l95t/R89 Shl50 transistor f151

    6DI100A-050

    Abstract: 30S3 M603 T151 T930
    Text: 6DI100A-050 iooa ! Outline Drawings POWER TRANSISTOR MODULE F e a tu re s • 7 l) —fc-f >J • h F E ^ iÜ l' • Kl*9/8c In c lu d in g Free W h e e lin g D iode H igh DC C urrent Gain Insulated Type • f f l i i : A p p lic a tio n s • AC i — AC M o to r C ontrols


    OCR Scan     		PDF 6DI100A-050 E82988 I95t/R89) 30S3 M603 T151 T930

    transistor f151

    Abstract: B/SMD transistor f151
    Text: 1DI50K-055«oa : O utline D ra w in g s POWER TRANSISTOR MODULE : F e a tu r e s • ¡ü W /± H ig h V o lta g e • 71J— In c lu d in g Free W h e e lin g D iode K rt/B E • A S O ^ Æ l' • SISSÏÏ5 E xcellent Safe O p e ra tin g Area T * Iyp i ttiW n .li


    OCR Scan     		PDF 1DI50K-055 71J-- 19S24-^ l95t/R transistor f151 B/SMD transistor f151

    Transistor b103

    Abstract: TRANSISTOR TZ b102 transistor 2DI100M-050 T151 b101 diode
    Text: 2DI100M-050 iooa I Outline D raw ings /< 7 POWER TRANSISTOR MODULE ; Features j ifthFE H igh DC C u rre n t Gain H igh Speed S w itc h in g : A p p lic a tio n s £ General P urpose In ve rte r U n in te rru p tib le Pow er S u p p ly N Clftflfttt Servo & S p in d le D rive fo r NC M a c h in e T ools


    OCR Scan     		PDF 2DI100M-050 l95t/R89 Transistor b103 TRANSISTOR TZ b102 transistor T151 b101 diode

    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


    OCR Scan     		PDF 28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram