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    TRANSISTOR F02 Search Results

    TRANSISTOR F02 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F02 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    70V AC to 48v dc 40 amp converter circuit diagram

    Abstract: No abstract text available
    Text: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller FEATURES DESCRIPTIO U The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode


    Original     		PDF LT3781 350kHz 300kHz LT3710 LTC3728 550kHz, 3781f 70V AC to 48v dc 40 amp converter circuit diagram

    GHM3045

    Abstract: FZT690 ltc 3781 SI4450 optocoupler Iso1 BAS21 BAT54 LT3781 MMBD914LT1 MURS120T3
    Text: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller U FEATURES DESCRIPTIO The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode


    Original     		PDF LT3781 350kHz LTC1929 300kHz LT3710 LTC3728 550kHz, 3781f GHM3045 FZT690 ltc 3781 SI4450 optocoupler Iso1 BAS21 BAT54 LT3781 MMBD914LT1 MURS120T3

    NEL2000

    Abstract: NEL2001 NEL200101-24 NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 Class AB AMPLIFIER 4W
    Text: DATA SHEET SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.


    Original     		PDF NEL2000 P10381EJ3V1DS00 NEL2001 NEL200101-24 NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 Class AB AMPLIFIER 4W

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 1.5V Drive Pch MOSFET + PNP TRANSISTOR QS8F2  Structure Silicon P-channel MOSFET/ PNP TRANSISTOR Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive).


    Original     		PDF Pw10s, R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 1.5V Drive Pch MOSFET + PNP TRANSISTOR QS8F2  Structure Silicon P-channel MOSFET/ PNP TRANSISTOR Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive).


    Original     		PDF Pw10s, R1120A

    Untitled

    Abstract: No abstract text available
    Text: QS8F2 Data Sheet 1.5V Drive Pch MOSFET + PNP TRANSISTOR QS8F2  Structure Silicon P-channel MOSFET/ PNP TRANSISTOR Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive).


    Original     		PDF Pw10s, R1120A

    C 5478 transistor

    Abstract: transistor 5478 7807 transistor NEL2004 1N4454 1N5254 NEL2004F02-24 resistor 39 ohm diode 1n4454
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB BASE • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) 3±0.2 2±0.2 5.85±0.2 EMITTER


    Original     		PDF NEL2004F02-24 NEL2004F02-24 24-Hour C 5478 transistor transistor 5478 7807 transistor NEL2004 1N4454 1N5254 resistor 39 ohm diode 1n4454

    C 5478 transistor

    Abstract: transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 NEL2004F02-24 173278 LARGE SIGNAL IMPEDANCES
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) BASE 3±0.2 2±0.2 2±0.2 2 X φ3.2±0.3


    Original     		PDF NEL2004F02-24 NEL2004F02-24 24-Hour C 5478 transistor transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 173278 LARGE SIGNAL IMPEDANCES

    LT1185

    Abstract: transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Standard 5-Lead Packages Full Remote Sense


    Original     		PDF LT1185 LT1185 transistor BD 424 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK diode 1334 106 6K tantalum capacitors

    Untitled

    Abstract: No abstract text available
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA


    Original     		PDF LT1185 O-220 LT1185 LT1129 200mA 400mV LT1175 500mA LT1585 LT1964

    LT1185CT

    Abstract: LT1185 LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK
    Text: LT1185 Low Dropout Regulator FEATURES Low Resistance Pass Transistor: 0.25Ω Dropout Voltage: 0.75V at 3A ±1% Reference Voltage Accurate Programmable Current Limit Shutdown Capability Internal Reference Available Full Remote Sense Low Quiescent Current: 2.5mA


    Original     		PDF LT1185 O-220 LT1185 LT1129 200mA 400mV LT1175 500mA LT1585 LT1964 LT1185CT LT1185C LT1185CQ LT1185I LT1185IQ LT1185M LT1185MK

    3408 diode

    Abstract: LTC3408EDD CDRH2D11 CMD4D06 JMK212BJ106MN JMK212BJ475MG LQH32CN4R7M11 LTC3408
    Text: LTC3408 1.5MHz, 600mA Synchronous Step-Down Regulator with Bypass Transistor U FEATURES DESCRIPTIO • The LTC 3408 is a high efficiency monolithic synchronous buck regulator optimized for WCDMA power amplifier applications. The output voltage can be dynamically


    Original     		PDF LTC3408 600mA 600mA 300MHz LTC5505-1: 28dBm 18dBm, LTC5505-2: 32dBm 12dBm, 3408 diode LTC3408EDD CDRH2D11 CMD4D06 JMK212BJ106MN JMK212BJ475MG LQH32CN4R7M11 LTC3408

    LT1185

    Abstract: LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK
    Text: LT1185 Low Dropout Regulator FEATURES The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly less die area. High efficiency is maintained by using special


    Original     		PDF LT1185 LT1185 118500mA LT1120A LT1129 200mA 400mV LT1175 500mA LT1585 LT1185C LT1185CT LT1185I LT1185IT LT1185M LT1185MK

    Untitled

    Abstract: No abstract text available
    Text: LTC4215 Hot Swap Controller with I2C Compatible Monitoring FEATURES DESCRIPTION n The LTC 4215 Hot SwapTM controller allows a board to be safely inserted and removed from a live backplane. Using an external N-channel pass transistor, board supply voltage


    Original     		PDF LTC4215 SSOP-16 SSOP-20 4215fc LTC1647-1/LTC1647-2/ LTC1647-3 LTC4210 LTC4211 LTC4212

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    LDB 107

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.


    OCR Scan     		PDF NEL2000 P10381EJ3V1DS00 LDB 107

    NEL2001

    Abstract: NEL2000 DB15F NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 nec microwave
    Text: DATA SHEET SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PC N/PC S base station applications.


    OCR Scan     		PDF NEL2000 NEL200101-24 NEL2004F02-24 NEL2012F02-24 NEL2035F03-24 NEL2001 DB15F NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 nec microwave

    29Z3

    Abstract: Transistor CODE FR m7am
    Text: 55C D • SIEG flSBSbOS 000*431^ 1 BCY67 PNP Silicon PlanarTransistor SIEMENS AKTIENGESELLSCHAFT 04319 7^ O Z- 3 BCY 6 7 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 4 1 8 7 6 . The collector is electrically connected to the case. The transistor is particularly provided


    OCR Scan     		PDF BCY67 BCY67 29Z3 Transistor CODE FR m7am

    609 transistor

    Abstract: No abstract text available
    Text: DTD123TK Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm available in an SMT3 (SMT, SC-59) package DTD123TK (SMT3) 29*02 package marking: DTD123TK; F02 a built-in bias resistor allows inverter circuit configuration without external


    OCR Scan     		PDF DTD123TK SC-59) DTD123TK; DTD123TK 609 transistor

    C 5478 transistor

    Abstract: 7807 transistor LM 1709
    Text: NPN SILICON BIPOLAR NEL2004F02.24 L - BAND POWER TRANSISTOR OUTLINE DIMENSIONS FEATURES_ Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) • HIGH LINEAR GAIN:


    OCR Scan     		PDF NEL2004F02 NEL2004F02-24 the83 C 5478 transistor 7807 transistor LM 1709

    C 5478 transistor

    Abstract: No abstract text available
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES OUTLINE DIMENSIONS NEL2004F02-24 Units in mm HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched HIGH LINEAR GAIN: 12.0 dB Class A, 10.0 dB Class AB


    OCR Scan     		PDF NEL2004F02-24 NEL2004F02-24isan th-19 24-Hour C 5478 transistor

    C 5478 transistor

    Abstract: 7807 transistor transistor 5478 TRANSISTOR c 5478 LARGE SIGNAL IMPEDANCES "class AB Linear"
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 1.5 W Class A, 7 W Class AB PACKAGE OUTLINE F02 USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) HIGH LINEAR GAIN: 12.0 dB Class A, 10.0 dB Class AB


    OCR Scan     		PDF NEL2004F02-24 NEL2004F02-24 C 5478 transistor 7807 transistor transistor 5478 TRANSISTOR c 5478 LARGE SIGNAL IMPEDANCES "class AB Linear"

    TRANSISTOR D 2627

    Abstract: Telefunken Electronic transistor D 2624 transistor k 2628 Telefunken 105 transistor 2all CB-108 ic 546 DIN 41872 transistor BU 104
    Text: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage


    OCR Scan     		PDF r-33-13 T-33-13 2380T TRANSISTOR D 2627 Telefunken Electronic transistor D 2624 transistor k 2628 Telefunken 105 transistor 2all CB-108 ic 546 DIN 41872 transistor BU 104

    transistor BF 506

    Abstract: bf506 wl SOT-23
    Text: TELEFUNKEN ELECTRONIC filC D • A'^QQ'Jb 0005513 'i ■ AL6G ^ 7 2 / ~ TTIdilFlLDMDSIKl electronic | B F 506 Creative Technologies * Silicon PNP RF Transistor Applications: Oscillator-, mixer and uncontrolled pre-amplifier stages up to 300 MHz Features: • Small feedback capacitance


    OCR Scan     		PDF 569-GS transistor BF 506 bf506 wl SOT-23