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    TRANSISTOR F 255 Search Results

    TRANSISTOR F 255 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F 255 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4435 power ic

    Abstract: transistor NEC B 617 IC 4435 NEC silicon epitaxial power transistor 1694 NEC B 536 nec b 536 transistor NEC B 617 gh 312 NPN transistor mhz s-parameter 2SC3357
    Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE DIMENSIONS High gain 2 | S21 | = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA New power mini-mold package version of a 4-pin type


    Original     		PDF 2SC5336 2SC3357 4435 power ic transistor NEC B 617 IC 4435 NEC silicon epitaxial power transistor 1694 NEC B 536 nec b 536 transistor NEC B 617 gh 312 NPN transistor mhz s-parameter 2SC3357

    BF199

    Abstract: BF 234 transistor BP317 data bf199 transistor NPN BF199
    Text: 00-07-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-048-21 BF 199 trans DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF199 NPN medium frequency transistor


    Original     		PDF M3D186 BF199 SCA55 117047/00/02/pp8 BF199 BF 234 transistor BP317 data bf199 transistor NPN BF199

    GMA06

    Abstract: No abstract text available
    Text: CORPORATION G M A0 6 ISSUED DATE :2004/05/28 REVISED DATE : NPN SILICON TRANSISTOR Description The GMA06 is Amplifier Transistor. Package Dimension REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J


    Original     		PDF GMA06

    G2N7002

    Abstract: No abstract text available
    Text: 1/3 G2N7002 N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS TRANSISTOR Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30


    Original     		PDF G2N7002 G2N7002

    MSC1090M

    Abstract: 1402 Transistor transistor k 790
    Text: MSC1090M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B A .100 X 45° The ASI MSC1090M is a common base Class C transistor, designed for Avionics, DME Applications from 1025 to 1150 MHz. ØD 1 3 C B .088 x 45° CHAMFER 4 2 E F FEATURES:


    Original     		PDF MSC1090M MSC1090M 1402 Transistor transistor k 790

    AVD035F

    Abstract: TACAN ASI10558 1402 Transistor
    Text: AVD035F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B The ASI AVD035F is a medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. A .100 X 45° ØD .088 x 45° CHAMFER C B E FEATURES: F G H • Class C Operation


    Original     		PDF AVD035F AVD035F 10AXIMUM TACAN ASI10558 1402 Transistor

    VLN 2003

    Abstract: BA12002 12003B transistor BF 257 transistor BF 258 BA12001B BA12003B BA12003BF BA12004B high current darlington transistor
    Text: Standard ICs High voltage, high current Darlington transistor array BA12001B/BA12002/BA12003B/BA12003BF/ BA12004B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high voltage withstand resistance and consisting o f seven circuits o f Darlington transistors.


    OCR Scan     		PDF BA12001B/BA12002/B A12003B/BA12003BF/ BA12004B BA12001B, BA12002, BA12003B, BA12003BF, BA12004B VLN 2003 BA12002 12003B transistor BF 257 transistor BF 258 BA12001B BA12003B BA12003BF high current darlington transistor

    TRIMMER cap no-2222 809 07015

    Abstract: BD433 BLW77
    Text: N AMER PHILIPS/DISCRETE b^E t> m t b s a ' m odetbôd ghs IAPX BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB orclass-B operated high power transmitters in the h .f. and v .h .f. bands. The transistor presents excellent performance as a linear am­


    OCR Scan     		PDF BLW77 TRIMMER cap no-2222 809 07015 BD433 BLW77

    U2390

    Abstract: GE254 RF TRANSISTOR 1.5 GHZ 2SC2759
    Text: SILICON TRANSISTOR 2SC2759 UHF/VHF MIXER, UHF OSCILLATOR NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD The 2SC2759 is specially designed fo r use as V H F and U H F m ix e r and P A C K A G E D IM E N S IO N S U H F oscillators in a tuner o f T V receiver. The 2SC2759 feature high c o n ­


    OCR Scan     		PDF 2SC2759 2SC2759 U2390 GE254 RF TRANSISTOR 1.5 GHZ

    MRF477

    Abstract: MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H
    Text: MOTOROLA SC XSTRS/R F 4bE D L3ti72Sl4 □D'mb'iE 4 MOTOROLA MOTb T -S 3 -/Í SEMICONDUCTOR TECHNICAL DATA MRF477 T h e R F L in e 40 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILIC ON . . . designed prim arily for application as a high-power linear


    OCR Scan     		PDF fci3ti72S4 MRF477 T0-220AB L3b72S4 T-33-11 Pout-40WPEP MRF477 MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H

    transistor NEC D 822 P

    Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
    Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA


    OCR Scan     		PDF 2SC5336 2SC3357 transistor NEC D 822 P transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic

    a12-002b

    Abstract: LF350 BA12002
    Text: Standard ICs High voltage, high current Darlington transistor array BA12001B/BA12002/BA12003B/BA12003BF/ BA12004B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high voltage withstand resistance and consisting of seven circuits o f Darlington transistors.


    OCR Scan     		PDF BA12001B/BA12002/BA12003B/BA12003BF/ BA12004B BA12001B, BA12002, BA12003B, BA12003BF, BA12004B BA12004B) a12-002b LF350 BA12002

    2SK872

    Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
    Text: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss


    OCR Scan     		PDF 2SK872 2SK872 IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717

    2SC2331

    Abstract: SIRBA TC5344A if4g 2SA1008 PBT GF 20 PBT GF 10 fr 2SC2331 Y
    Text: T -5 > • S / - h s < r> — Silicon Power Transistor 2SC2331 N R N x t ^ + '> 7 ; H * > 'J U > h =7 I i f f l 2 S C 2 3 3 1 ia iS fê x ^ ^ 7 > /X n -, v - f > rm t U K ? n f c 7 - f > 7'- w t - ^ ( f - f i ¿*<7 K ÿ ^ f '< £ i r M M x - t o iff : m m )


    OCR Scan     		PDF 2SC2331 2SA1008 sC-46 220AB SIRBA TC5344A if4g 2SA1008 PBT GF 20 PBT GF 10 fr 2SC2331 Y

    MRF342

    Abstract: transistor D 2581 RF340
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF342 The RF Line 24 W 1 0 0 -1 5 0 MHz R F POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . d e s ig n e d p rim a rily fo r use in V H F a m p lifie rs w ith a m p litu d e m o d u la tio n and


    OCR Scan     		PDF MRF342 RF340 RF344 MRF342 transistor D 2581

    2SK1149

    Abstract: transistor sb 772
    Text: Mos M O S Field Effect Pow er Transistor 2SK1149 N — l ' / ' r7 X 'f -y 9 - T . m 2SK1149 i, N - f - r * iz X & M O F E T > m MOS F E T T”, 5 V « i l * IC ¿Diti ¡ t S f g g j ^ - S T t È ^ it a x : mm 7 l f f t o i ' S i ^ ' i 7 f >J î ! * W D C - D C


    OCR Scan     		PDF 2SK1149 2SK1149 transistor sb 772

    2SK1132

    Abstract: TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B
    Text: MO M O S Field Effect Transistor MOS F E T 2SJ165 {i P • mm F E T T & 9, Ü X >f -y f - > ^ " r 'X ^ f X h L T H i t T - t c # tc , ± 0 :2 J V T R ^ ^ - f 'V F7 > y X ^ => 6‘ • x - i17 f £ - H i â ' C i '0 4-*•■■ < £> & o m 0.42 z s o & A ti4


    OCR Scan     		PDF 2SJ165 2SK1132 TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B

    Lem LT 300 - t

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2 S A 1 4 6 4 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATU RES P A C K A G E DIMENSIONS in m illim e te rs • H ig h f T : f T = 4 0 0 M H z 2-8±0.2 • C o m p lem en tary to 2 S C 3 7 3 9


    OCR Scan     		PDF 2SA1464 Lem LT 300 - t

    transistor VCE 1000V

    Abstract: 1BW TRANSISTOR EUPEC T
    Text: EUPEC •52E D FF 7 5 R 10 K ■ 3M032T7 000G20ti flOT H U P E C 7 =3 f 3 / Transistor Transistor Thermische Eigenschaften Thermal properties DC, pro Baustein / per module RthJC DC, pro Zweig / per arm pro Baustein / per module RthCK pro Zweig / per arm Elektrische Eigenschaften


    OCR Scan     		PDF 000020b 34D32CI7 transistor VCE 1000V 1BW TRANSISTOR EUPEC T

    Untitled

    Abstract: No abstract text available
    Text: 2SC4791 -S ilicon N PN B ip o la r Transistor Application MPAK-4 VHF & UHF wide band amplifier Features 2 * High gain bandwidth product f-j- = 10 GHz typ • High gain, low noise figure PG = 15.5 dB typ, N F = 1.2 dB typ at f = 900 MHz 3 4Q 4 1. 2. 3.


    OCR Scan     		PDF 2SC4791 2SC4791

    bTI51

    Abstract: fsjc F4CJ 2SJ209 TF230
    Text: 5s—S ,T NEC • 2/— f~~ M O S Field Effect Transistor A l? r / v f7 2SJ209 MOS FET X ' f ' y & 2 S J 2 0 9 l i P f - ^ ^ ^ * i ^ M O S FETT", 5 < fc > yt > ^M O S FET 7 M ? T f F R K 2.8 ±0.2 t o IÌ.X4 "/r &0, t ' ^ / K U S S - 1.5 L T ^ iiT 't o I-


    OCR Scan     		PDF 2SJ209 IEI-620) bTI51 fsjc F4CJ 2SJ209 TF230

    TC-6300

    Abstract: 2SK873 miw dc-dc tc6300 Voscm-20
    Text: M O S Field Effect Pow er Transistor 2SK873 N f t ^ ^ - M O S FET xmm 2SK873 Ü , •c * > K < , x ^ 7 f > n i i i ; - M OS F E T t i T is d , ¡a s Jf x W & E I T O ! mm -i ■y-f > r-.iiri?;, D C -D C n > ✓ * -? t’ i i i S T 't o & f t °V dss


    OCR Scan     		PDF 2SK873 TC-6300 2SK873 miw dc-dc tc6300 Voscm-20

    KTC1923

    Abstract: transistor Mu E140 RF NPN POWER TRANSISTOR 100MHz
    Text: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS KTC1923 ( APPLIC ATIO NS ) • FM, R F , MIX, o r I F Amplifier ■ High F r e q u e n c y Amplifier ( FEATURES • Excellent N oise F ig u r e , N F = 2.5dB (Typ.) a t f= 1 0 0 M H z • N o n -d e s tr u c tiv e a g a in s t s ta tic voltage, 1500V a t C = 3 0 p F


    OCR Scan     		PDF KTC1923 100MHz 600MHz 12/rei 100MHz) KTC1923 transistor Mu E140 RF NPN POWER TRANSISTOR 100MHz

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY182 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA • Hermetically sealed microwave package • f T = 8 GHz, F = 2.4 dB at 2 GHz


    OCR Scan     		PDF BFY182 Q62702F1608 Q62702F1714 BFY182 de/semiconductor/products/35/35 de/semiconductor/products/35/353 FY182 GXM05552