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    TRANSISTOR F 13003 Search Results

    TRANSISTOR F 13003 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F 13003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 13003d

    Abstract: 13003D 13003a 13003a TRANSISTOR 13003F 13003C transistor 13003F 13003c TRANSISTOR 13003E S W 13003a
    Text: ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer LIMMITING VALUES Tj=25℃ Unless OtherWise Stated Parameter Symbol Value


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    PDF Jul-09 13003F transistor 13003d 13003D 13003a 13003a TRANSISTOR 13003F 13003C transistor 13003F 13003c TRANSISTOR 13003E S W 13003a

    13003CD

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003CDH Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


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    PDF 13003CDH 290ns 13003CDHL-TM3-T 13003CDHGat QW-R223-022 13003CD

    T92 DIODE

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADG Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


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    PDF 13003ADG 290ns 13003ADGL-TM3-T 13003ADGPat QW-R223-023 T92 DIODE

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    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    PDF 13003DH 13003DH 13003DHL-x-TM3-T 13003DHL-x-T60-K QW-R223-011

    NPN transistor Electronic ballast to92

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    PDF 13003DW 13003DW 13003DWL-x-TM3-T 13003DWL-x-T60-F-K 13003DWL-x-T92-A-B 13003DWL-x-T92-A-K 13003Dat QW-R223-012 NPN transistor Electronic ballast to92

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    PDF 13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300at QW-R223-018

    13003bd

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BDG Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003BDG is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    PDF 13003BDG 13003BDG 13003BDGL-TM3-T 13003BDGL-T60-F-K 13003BDGL-T92-F-B QW-R223-017 13003bd

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    PDF 13003EDA 13003EDA 13003EDAL-TM3-T 13003EDAL-T60-F-K 13003EDAL-T92-F-B QW-R223-020

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    PDF 13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300at QW-R223-018

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    PDF 13003EDA 13003EDA 13003EDAL-TM3-T 13003EDAL-T60-K QW-R223-020

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    PDF 13003DH 13003DH 13003DHL-x-TM3-T 13003DHL-x-T60-F-K 13003DHL-x-T92-A-B 13003DHL-x-Tat QW-R223-011

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    PDF 13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-F-K 13003BSL-T92-F-B 13003BSL-T92-F-K QW-R223-018

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    PDF 13003DW 13003DW 13003DWL-x-TM3-T 13003DWL-x-T60-K 13003DWL-x-T92-B 13003DWL-x-T92-K QW-R223-012

    13003d

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS  DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    PDF 13003DE 13003DE 13003DEL-x-T60-K 13003DEG-x-T60-K 13003DEL-x-T92-B 13003DEG-at QW-R223-013 13003d

    13003D

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS „ DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    PDF 13003DE 13003DE 13003DEL-x-T60-F-K 13003DEG-x-T60-F-K 13003DEL-x-T92-A-B 13003DEG-x-T92-A-B 1300at QW-R223-013 13003D

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    PDF 13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300t QW-R223-018.

    13003 TRANSISTOR

    Abstract: E 13003 TRANSISTOR 13003 TRANSISTOR npn 13003 NPN Transistor features transistor 13003 13003 F 13003 T 13003 transistor transistor D 1710 HSiN Semiconductor Pte
    Text: 13003 Transistor NPN www.hsin.com.sg HSiN Semiconductor Pte Ltd 13003 TO—220 TRANSISTOR( NPN ) FEATURES Power dissipation PCM : 1.5 W(Tamb=25℃) Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range


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    PDF O--220 100TYP 540TYP 13003 TRANSISTOR E 13003 TRANSISTOR 13003 TRANSISTOR npn 13003 NPN Transistor features transistor 13003 13003 F 13003 T 13003 transistor transistor D 1710 HSiN Semiconductor Pte

    transistor 13003

    Abstract: PC 13003 TRANSISTOR KSE13003HE13003 NPN transistor 13003 TO-126 13003 TO-126 PC 13003 13003 HE13003 13003 TRANSISTOR transistor 13003 C
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13003 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:D180BG-00 芯片厚度:240±20µm 管芯尺寸:1800x1800µm 2 焊位尺寸:B 极 320×320µm 2,E 极 200×300µm 2


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    PDF 100mm D180BG-00 KSE13003HE13003 O-126/220 10VIC 125VIc transistor 13003 PC 13003 TRANSISTOR KSE13003HE13003 NPN transistor 13003 TO-126 13003 TO-126 PC 13003 13003 HE13003 13003 TRANSISTOR transistor 13003 C

    H0A0872

    Abstract: H0A0866 HOA0865-T55 LEM sensor CURRENT infrared sensor with pic H0A086 HOA0865 HOA087X HOAQ865-T55 HQA0865-T55
    Text: Datasheet —HOAQ865-T55 Page 1 o f 5 Honeywell HOA0865-T55 HOA Series Infrared Transmissive Sensor, Transistor Output, Two-Mounting Tabs, Plastic package Representative photograph, actual product appearance may vary. Due to regional agency approval requirements, some products may not be


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    PDF HOAQ865-T55 HOA0865-T55 HOA086X/087X HOA0865-T55 H0A0872 H0A0866 LEM sensor CURRENT infrared sensor with pic H0A086 HOA0865 HOA087X HOAQ865-T55 HQA0865-T55

    transistor 13003 AD

    Abstract: transistor eb 13003 TU F 13003 transistor Eb 13003 A eb 13003 transistor LB 13003 C 0/transistor 13003 AD ST13003
    Text: S G S - T H O M S O N M œ Ë IL Ë O T fô ® K I S T 13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . MEDIUM VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS:


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    PDF ST13003 OT-32 O-126) transistor 13003 AD transistor eb 13003 TU F 13003 transistor Eb 13003 A eb 13003 transistor LB 13003 C 0/transistor 13003 AD ST13003

    13003 TRANSISTOR equivalent

    Abstract: transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor
    Text: MOTOROLA O rder this docum ent by MJE13002/D SEMICONDUCTOR TECHNICAL DATA M JE 13002* M JE 13003* D esigner’s Data Sheet ‘ M otorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS


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    PDF MJE13002/D O-225AA 13003 TRANSISTOR equivalent transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor

    E 13003 TRANSISTOR

    Abstract: c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR
    Text: TELEFUNKEN ELECTRONIC 17E D • a^QO'te DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique


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    PDF T-33-II 0IN41 I3-75. 15A3DIN E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR

    PC 13003 TRANSISTOR

    Abstract: SH 13003 SH 13003 TRANSISTOR E 13003 TRANSISTOR 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 npn E 13003 b TRANSISTOR voltage REGULATOR 13003 transistor 13003 k T 13003 transistor
    Text: NPN SILICON TRANSISTOR K SH 13003 High Voltage Power Transistor D-PACK For surface Mount Applications D-PAK • High speed Switching • Suitable for Switching Regulator and Motor Control • Straight Lead I.PACK, I Suffix • Lead Formed for Surface Mount Applications(No Suffix)


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    PDF

    transistor eb 13003

    Abstract: transistor EN 13003 A transistor Eb 13003 A transistor EN 13003 eb 13003 PC 13003 TRANSISTOR SH 13003 st 13003 TRANSISTOR npn transistor eb 13003 c transistor LB 13003 C
    Text: K SH 13003 NPN EPITAXIAL SILICON TRAN SISTO R HIGH VOLTAGE POW ER TRANSISTOR D-PACK FOR SU R FA CE MOUNT APPLICATIONS D-PAK • High speed Switching • Suitable for Switching Regulator Motor Control • Straight Lead I.PACK, I Suffix • Lead Formed for Surface Mount Applicattons(No Suffix)


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    PDF KSH13003 transistor eb 13003 transistor EN 13003 A transistor Eb 13003 A transistor EN 13003 eb 13003 PC 13003 TRANSISTOR SH 13003 st 13003 TRANSISTOR npn transistor eb 13003 c transistor LB 13003 C