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    TRANSISTOR F 0552 Search Results

    TRANSISTOR F 0552 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR F 0552 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK458

    Abstract: 2SK45
    Text: tr m & m m M O S « # * * * ''* ? - h 9 M O S Field Effect Pow er Transistor 2SK458 N f t ^ ' 0r7 - M O S FET X 'f dUfls X i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK458ii, FET PACKAGE DIMENSIONS Unit : mm T*, iS S & D C


    OCR Scan     		PDF 2SK458 2SK458Ã 2SK458 2SK45

    2SA1626

    Abstract: S0532 TRANSISTOR BO 346 X108 TIA03
    Text: NEC À Silicon Transistor 2SA1626 PNP ¡S& ÉL Sil i E X -f "J *f-> *f PN P Silicon Triple Diffused Transistor High Speed High Voltage Switching ft ftw m m o PtjÉJ'E'C-to V Ceo = — 400 V o x ^ y f > ^ " X : mm 7.0 M A X . b°— tf<0.7 /US T a = 25 ° C )


    OCR Scan     		PDF PWS10 247-Lij 22-Lil 24-Lil 22-fl 29-Jt 27-tetà 29-itijulft 26-ffl 2SA1626 S0532 TRANSISTOR BO 346 X108 TIA03

    bi 370 transistor

    Abstract: JNI Corporation AA1A4p bi 370 transistor e PA33 nec j
    Text: SEC k Compound Transistor A l Î T / \ f Z AA1A4P f&tfc F*9ÜcN P N i 1J 3 > F 5 >•$>;*? Resistors Built-in Type NPN Silicon Epitaxial Transistor Medium Speed Switching ftWm/P A C K A G E ^/FEATUR ES DIMENSIONS Unit : mm o '<47 è I*3/Sï L t V ' ì t o


    OCR Scan     		PDF CycleS50 SC-43B bi 370 transistor JNI Corporation AA1A4p bi 370 transistor e PA33 nec j

    tf 044

    Abstract: 2SK490 JE 33 HT - 0886 b0236 HT 0886
    Text: HEC j M O S Field Effect P ow er Transistor _ 2SK490 N - ^ * ; i ^ N 0r7 - M O S FET i i f f l N-Channel M OS Field Effect Power Transistor Switching Industrial Use 2SK490ii, N f - M O S FET W B 0 / P A C K A G E D IM EN SION S Unit: mm < , 4 X -y - f - >


    OCR Scan     		PDF 2SK490 2SK490Ã CycleS50 tf 044 2SK490 JE 33 HT - 0886 b0236 HT 0886

    transistor et 454

    Abstract: 2sk542 DC-DC H14 F530 T108 T460
    Text: mm & ma SEC M O S M nft& }£:s<r7 M O S Field Effect P o w er Transistor m = f= r l\T X 2SK542 N f t ^ /^ '° 7 - M O S FET x > r i i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK 542Ü , FET ^ J fiia /P A C K A G E DIMENSIONS


    OCR Scan     		PDF 2SK542 2SK542Ã transistor et 454 2sk542 DC-DC H14 F530 T108 T460

    JE 800 transistor

    Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
    Text: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )


    OCR Scan     		PDF uPA76HA JE 800 transistor upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s

    UPA79C

    Abstract: PA79C uPA79 til 31a RA8040 JS 2204 hfe 4538 w0422 vtc 082 J2/JS 2204
    Text: NEC a m + T ix f* Com pound Transistor A V PA79C -y°\ y ? Y=7^'<^ S NPN Silicon Epitaxial Transistor Array Mini Printer Driver It/r'fX- Yfrbtihl E S & S Ä ÿ ¿¿PA79C i, N PN ÿ i ) 3 > ( - 7 > ÿ X ^ i / <J ïvïICit Ltz \'ÿ>-J*?7l"(Tto ÎÜ * fâ W ' Œ * i ® < MOS IC c o m ijffi- ^ T - itS lO O m A S f i O t f ÿ


    OCR Scan     		PDF uPA79C PA79C UPA79C PA79C uPA79 til 31a RA8040 JS 2204 hfe 4538 w0422 vtc 082 J2/JS 2204

    upa74ha

    Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor
    Text: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )


    OCR Scan     		PDF uPA74HA UPA74 PA74H gw 348 PA74HA k 2445 transistor

    2SA1612

    Abstract: No abstract text available
    Text: NEC j > y = l > Y = ÿ > i > 7 . 9 Silicon Transistor 2 S A 1 6 1 2 PNP Silicon Epitaxial Transistor Audio Frequency High Gain Amplifier mm; 7" 1J V KICffl £ L T f t S T f „ o M 'h m f t -m v h O, 2 . 1 ± 0. 1 1 .2 5 ± 0 . 1 O h FE : 500 T Y P . I c = — 1 . 0


    OCR Scan     		PDF 2SA1612 2SC41801 SC-70 2SA1612

    2SA1396

    Abstract: 2SC3568 T108 TS33
    Text: NEC j m = f T / x r x Silicon Power Transistor A 2SA1396 P N P i t: ^ * '> 7 7Vl'7ï2'> V □ > h =7 > i> 7* 9 x if f l PNP Silicon Epitaxial Transistor High Speed, High Voltage Switching Industrial Use 2 S A 1 3 9 6 i* iâ ^ * It Œ X ^ t L X W W fê H / P A C K A G E DIMENSIONS


    OCR Scan     		PDF 2SA1396 2SA1396 2SC3568 fifO988 2SC3568 T108 TS33

    2SC2719

    Abstract: pt 2313 3l-5063 cdb 413 h044 IC 566 vco 05S2 PA33 TS33 3L50
    Text: > > i; 3 n y > i f z . 9 Silicon Transistor N P N X . k ' f + Z 'T J U m S s fJ 3 > Y ' 9 > i > 7 > 9 NPN Silicon Epitaxial Transistor High Frequency Amplifier, Medium Speed Switching Industrial Use 5 .2 P O 2 S A — 600 t 1 1 5 2 ¿ m W 3 > V CEo = y /


    OCR Scan     		PDF 02SA1152Â SC-43B PWS10 3l-5063 2SC2719 pt 2313 cdb 413 h044 IC 566 vco 05S2 PA33 TS33 3L50

    2SK872

    Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
    Text: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss


    OCR Scan     		PDF 2SK872 2SK872 IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717

    2SK659

    Abstract: TC-6071
    Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #


    OCR Scan     		PDF 2SK659 2SK659Ã 2SK659 TC-6071

    TC-6201

    Abstract: 2SK787 T460 L083S1213T AMC1085-3.3T
    Text: MOS M O S Field Effect Pow er Transistor — MOS F E T x > r " s * > 7 ' m x i f f l 2 S K 787 Ü , + M O S F E T T* ^ > ÎS fiï*s'fS < , X -1* •/ -f- > ¥ i ì : mm & f) , rgjloJiSX 'f >yf <t> 3.2 + 0.2 4.7 MAX. 15.7 MAX. y o rn ili, m 1. 5 3 D c -D c


    OCR Scan     		PDF 2SK787 TC-6201 2SK787 T460 L083S1213T AMC1085-3.3T

    2SJ153

    Abstract: No abstract text available
    Text: M O S Field Effect Pow er Transistor 2SJ153 P f^ ;U / N ° 7 - M O S FET I i f f l 2SJ153 i, MOS FET T, 5 V H i * IC (c J; è Æ æ œ S O T t ë f r i S i i t X ' f * < , y w / 'i # K, y x ' f •/ f - > 7 f > X f t W B 0 ( T O : mm „ i , f f i - i x T ^ S fc * > ,


    OCR Scan     		PDF 2SJ153 2SJ153

    2SK853

    Abstract: 2SK853A 2SK85 L0722
    Text: SEC Junction Field Effect Transistors 2 S K 8 5 3 .8 5 3 A ¡ a & * ts , i& m » * * ♦ § « N-Channel Silicon Junction Field Effect Transistor High Frequency Amplifier, Audio Frequency Amplifier f t : mm f t O ftß jfö ig ia . 7 t D / x f / f . I T


    OCR Scan     		PDF 2SK853, 2SK853A 2SK853 T10908 2SK853A 2SK85 L0722

    RM4T

    Abstract: r460 FET 2SK800 lg lx 221 TC6142 b0992 tt 22
    Text: M O S Field Effect P ow er Transistor N ^ ^ ^ < 7 -M O S x 2S K 800ÌÌ, <, N - f - -y T x 4 ' > ' N> X/ > h m m s-ty — M OS > , Ü 5 J i & - v i - > X FET F E T T '^ ~ > 'f v ^ - fì : mm) f -> 7 ' * , D C -D C n > /< — # Î t ° V dss~ 450 V, o f i ^ > f f i Î Æ


    OCR Scan     		PDF 2SK800 2SK800Ã RM4T r460 FET 2SK800 lg lx 221 TC6142 b0992 tt 22

    TRANSISTOR BJ 033

    Abstract: 2SB1068 JAN 5751 m5ss
    Text: SEC j ^ fx / \ Y 7 Silicon T ran sistor A 2SB1068 PN P Silicon Epitaxial Transistor Audio Frequency Amplifier ¡^ S / F E A T U R E S K W m /P A C K A G E DIMENSIONS oî&‘W.i±-kWiM.WM<n^— ÿ — V ÿ 4 ^ ' í r f f l í L T v", K F '^ O 'f , Unit : mm


    OCR Scan     		PDF 2SB1068 o2SD15131 PWS10 TRANSISTOR BJ 033 2SB1068 JAN 5751 m5ss

    2SK1149

    Abstract: transistor sb 772
    Text: Mos M O S Field Effect Pow er Transistor 2SK1149 N — l ' / ' r7 X 'f -y 9 - T . m 2SK1149 i, N - f - r * iz X & M O F E T > m MOS F E T T”, 5 V « i l * IC ¿Diti ¡ t S f g g j ^ - S T t È ^ it a x : mm 7 l f f t o i ' S i ^ ' i 7 f >J î ! * W D C - D C


    OCR Scan     		PDF 2SK1149 2SK1149 transistor sb 772

    2SK470

    Abstract: 2sk47 btt4
    Text: SEC j i i r / W Z M O S Field E ffe ct P o w e r T ra n sisto r J _ 2SK470 v ^ — MOS F E T X f m I i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 7 0 ii, F E T t\ X f y f > d c > ;< — i 7 • - t — • 'J 1 / —


    OCR Scan     		PDF 2SK470 2SK470Ã PWS10 2SK470 2sk47 btt4

    r460 FET

    Abstract: tt 6222-1 2SK786 tt 6222 TC-6222 transistor GR 346 L0623 IR 8115 N0245 3e tRANSISTOR
    Text: MOS y<T7 — N MOS Field Effect P ow er Transistor FET I i f f l > YJP ^ - M O S F E T 2SK786 Ü, N T * > & & & f g < , x 4 -y f - > ¿ X T is ' , i S i f J i f c x 4 D C - D C 3 > '< - ? l z M M T t o # i t O V d s s = 900 V , Id do = 3 O fg jtX ^ 7 ? t o


    OCR Scan     		PDF 2SK786 32-fS 27l-tt 29-JtftW 354-fi 26-Sli r460 FET tt 6222-1 2SK786 tt 6222 TC-6222 transistor GR 346 L0623 IR 8115 N0245 3e tRANSISTOR

    2SK1132

    Abstract: TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B
    Text: MO M O S Field Effect Transistor MOS F E T 2SJ165 {i P • mm F E T T & 9, Ü X >f -y f - > ^ " r 'X ^ f X h L T H i t T - t c # tc , ± 0 :2 J V T R ^ ^ - f 'V F7 > y X ^ => 6‘ • x - i17 f £ - H i â ' C i '0 4-*•■■ < £> & o m 0.42 z s o & A ti4


    OCR Scan     		PDF 2SJ165 2SK1132 TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B

    FZ 300 R 06 KL

    Abstract: PA1603 Transistor NP 3773 TRANSISTOR PHL 641 PA1603CX uPA1603 L0734 IS352 l 0734
    Text: ^ • J Ê S Ù * ^ 0 ,7 - Com pound Field Effect P o w e r Transistor " ^ y /¿PA1603 à, i y A 1 6 3 \ or7“ - MO S F E T 'Z U H ' MOS F E T h m iÜ M tfifr & & Ô 4 / g -> -y ? '*7 - MOS F E T 7 W T - , ïü f f ln i^ .y ÿ W f f l ; ÿ > 7 ° 9° O


    OCR Scan     		PDF uPA1603 FZ 300 R 06 KL PA1603 Transistor NP 3773 TRANSISTOR PHL 641 PA1603CX L0734 IS352 l 0734

    2sk991

    Abstract: 2SK9 ASGA 2sk99
    Text: MOS M O S Field Effect P ow er Transistor N - ^ * ; i " N or7— M O S FET I i f f l mm 2SK991 ii, Nf-^*;w^i?'"o,7- M 0 S FET T*. 5 V * « * I C <nf t * tw J : & i £ K ï f t * * » T f é ì ' M x ^ y f > ^ x T O : mm t t . 4.8 MAX. -1.3±0.2 y t '/ ' f


    OCR Scan     		PDF 2SK991 2SK991 2SK9 ASGA 2sk99