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    TRANSISTOR EY Search Results

    TRANSISTOR EY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR EY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2402

    Abstract: transistor 2sD2402 Transistor Marking EY
    Text: DATA SHEET SILICON TRANSISTOR 2SD2402 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for


    Original     		PDF 2SD2402 2SD2402 2SB1571 transistor 2sD2402 Transistor Marking EY

    TRANSISTOR T 927

    Abstract: 965 transistor transistor D 4515 transistor t13 transistor b 1655 0280 218 065 ASTM-D-4066 a 933 transistor ASTM-D4066
    Text: 1662-2012:QuarkCatalogTempNew 9/14/12 7:45 AM Page 1662 POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 20 LED Spacers, Transistor Sockets, Kits and Insulators Transistor Mounting Kits TO-3 Transistor Sockets These pre-packaged universal mounting kits provide all the necessary hardware and insulators required to


    Original     		PDF Shoulder66 T-13/4 TRANSISTOR T 927 965 transistor transistor D 4515 transistor t13 transistor b 1655 0280 218 065 ASTM-D-4066 a 933 transistor ASTM-D4066

    Untitled

    Abstract: No abstract text available
    Text: '^£;r'.i-^oyi.du.ctot \J-J'7.0ducti, E3iM AVE. ; :"~ EL.D, "•ie J v TELEPHONE: 973 376-2922 JERSEY o~oai 2N499 (212) 227-8005 FAX: (973) 376"SS6° GERMANIUM MICRO ALLOY DIFFUSED-BASE TRANSISTOR PNP POLARITY General Description This transistor is a PNP, germanium, triode transistor designed primarily


    Original     		PDF 2N499

    transistor case To 105

    Abstract: transistor case To 106 transistor sockets a 124 transistor TO-66 SOCKET TRANSISTOR 187 4634 839 transistor ASTM-D4066 TO-62
    Text: 25 Transistor Sockets TO-3 Power Transistor Sockets TO-3 Transistor Sockets 1.530 1.187 .665 1.600 Max. 1.187 .665 .450 6-32 Thread 2 Pls (2) Insulating Shoulders .035 Tab 'B' Tab 'A' Heavy Duty Features an all-in-one mounting plate and solder tabs, providing complete electrical isolation of the solder tab


    Original     		PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    BC108 characteristic

    Abstract: BC237 c 2026 y transistor msc2295 marking 7m SOT-323
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a


    Original     		PDF MUN5211DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC108 characteristic BC237 c 2026 y transistor msc2295 marking 7m SOT-323

    BC237

    Abstract: equivalent to BC177 2n6431
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		PDF MUN5111DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 equivalent to BC177 2n6431

    BC237

    Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


    Original     		PDF SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1

    transistor BF245

    Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The


    Original     		PDF OT-223 PZTA14T1 inch/1000 U218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor BF245 BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


    Original     		PDF Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237

    Transistor 2N2905A

    Abstract: BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a


    Original     		PDF MUN5311DW1T1 Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 Transistor 2N2905A BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92

    SOT23 JEDEC standard orientation pad size

    Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


    Original     		PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


    Original     		PDF 70/SOT Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    BC237

    Abstract: BC238B MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value


    Original     		PDF PZTA42T1 318E-04, O-261AA MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 BC238B MOTOROLA

    BF245 TRANSISTOR

    Abstract: transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA64T1 PNP SmallĆSignal Darlington Transistor Motorola Preferred Device This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance.


    Original     		PDF OT-223 PZTA64T1 inch/1000 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 BF245 TRANSISTOR transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819

    Untitled

    Abstract: No abstract text available
    Text: TLP290 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP290 Programmable Controllers AC/DC-Input Module Hybrid ICs Unit: mm TLP290 consist of photo transistor, optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel, and can operate directly


    Original     		PDF TLP290 TLP290 3750Vrms)

    2N2222A motorola

    Abstract: BC237 H2A transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor MSB1218A-RT1 Motorola Preferred Devices This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC–70/SOT–323 package


    Original     		PDF 70/SOT inch/3000 MSB1218A-RT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 2N2222A motorola BC237 H2A transistor

    BC237

    Abstract: bc547 marking transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor 2SA1774 This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT–416/SC–90 package which is designed for low power


    Original     		PDF 416/SC inch/3000 2SA1774 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 bc547 marking transistor

    11-3C1

    Abstract: transistor 9036 tlp290 TLP290-4
    Text: TLP290 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP290 Programmable Controllers AC/DC-Input Module Hybrid ICs Unit: mm TLP290 consist of photo transistor, optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel, and can operate directly


    Original     		PDF TLP290 TLP290 3750Vrms) UL1577, E67349 11-3C1 transistor 9036 TLP290-4

    Untitled

    Abstract: No abstract text available
    Text: TLP291 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP291 Power Supplies Programmable Controllers Hybrid ICs Unit: mm TLP291 consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP291 is housed in the SO4 package, very small


    Original     		PDF TLP291 TLP291 3750Vrms) 11-3C1

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: TO-3, TO -5, TO-10 0 TRANSISTOR SOCKETS SOCKETS FOR TO -5 & TO-100 Fully molded compact construction. Speeds transistor assembly. Incorporates ultra high quality, closed entry, sleeve type contacts. Accepts .016 to .020 diameter leads and .010 x .018 rectangular transistor leads.


    OCR Scan     		PDF O-100

    60MHZ

    Abstract: CL5770
    Text: CL5770 NPN SILICON TRANSISTOR DESCRIPTION CL5770 is NPN silicon planar epitaxial transistor designed for small signal high frequency amplifiers and 04.68 0.18 TO-92A L i— 4.6 (0.18) 3.58 (0.14) !“ 12.7 (0.5) min. 10° 0.51 "(0 .02 ) 0.4 ç B eYT(0.016)


    OCR Scan     		PDF CL5770 O-92A 300mW IC-10mA 100MHz 400ohm 60MHZ 300\i$ 60MHZ

    Untitled

    Abstract: No abstract text available
    Text: - TO-3, TO-5, T 0-100 TRANSISTOR SOCKETS SOCKETS FOR TO -5 & TO-100 Fully molded compact construction. Speeds transistor assembly. Incorporates ultra high quality, closed entry, sleeve type contacts. Accepts .016 to .020 diameter leads and .010 x .018 rectangular transistor leads.


    OCR Scan     		PDF O-100