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    TRANSISTOR ERA - 3 Search Results

    TRANSISTOR ERA - 3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ERA - 3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ERA-51

    Abstract: ERA-33 ERA-6 Mini-Circuits RF Amplifier ADCH-80 ADCH-80A AN-60-010 era-33 input capacitor 10 microhenry inductor
    Text: IMPROVED ERA AMPLIFIERS AN-60-010 Introduction The improved Mini-Circuits ERA series of amplifiers offer the RF designer multi-stage performance in a package which looks like a discrete transistor. Improved ERA amplifiers advantages of wide bandwidth, impedance match, and a choice of gain and


    Original     		PDF AN-60-010) AN-60-010 M76913 AN60010 ERA-51 ERA-33 ERA-6 Mini-Circuits RF Amplifier ADCH-80 ADCH-80A era-33 input capacitor 10 microhenry inductor

    Untitled

    Abstract: No abstract text available
    Text: i., Ona. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5945 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD FEATURES: 45"_s -, I C Era • Common Emitter • PG = 9.0 dB at 2.0 W/470 MHz


    Original     		PDF 2N5945

    KT 805

    Abstract: Wideband RF Chokes 1 microhenry rfc ERA-1SM ERA-6SM ERA-3SM ERA-5SM ADCH-80 ADCH-80A ERA-21SM
    Text: BIASING MMIC AMPLIFIERS e.g., ERA SERIES (AN-60-010) Introduction The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor. Included in this family are the model prefixes to which


    Original     		PDF AN-60-010) AN-60-010 M120106 AN60010 KT 805 Wideband RF Chokes 1 microhenry rfc ERA-1SM ERA-6SM ERA-3SM ERA-5SM ADCH-80 ADCH-80A ERA-21SM

    Untitled

    Abstract: No abstract text available
    Text: BIASING OF CONSTANT CURRENT MMIC AMPLIFIERS e.g., ERA SERIES (AN-60-010) Introduction The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor. Included in this family are the model prefixes to which


    Original     		PDF AN-60-010) AN-60-010 M150261 AN60010

    12v dc choke circuit

    Abstract: 1 microhenry inductor Transistor ERA - 3 rf choke ADCH-80A Micro-Henries ADCH-80 ERA monolithic amplifier ERa series Mini-Circuits ERA-1SM
    Text: Super Wide-band RF Choke Purpose of the Product Use of Heterojunction Bipolar Transistor technology has resulted in development of super wide-band monolithic microwave amplifiers such as Mini-Circuits ERA series. These amplifiers cover a bandwidth from DC to 8 GHz. They need biasing current injected at the RF output port.


    Original     		PDF ADCH-80A. ADCH-80 ADCH-80A 50-ohm 12v dc choke circuit 1 microhenry inductor Transistor ERA - 3 rf choke ADCH-80A Micro-Henries ADCH-80 ERA monolithic amplifier ERa series Mini-Circuits ERA-1SM

    146R

    Abstract: CL146 T0-92B
    Text: CL146 NPN A F LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR G EN ERA L DESCRIPTION T0-92B The CL146 is a NPNsilicon planar epitaxial transistor in plastic package designed for hearing aids, watches, paging systems and other equipment where small size is of paramount importance.


    OCR Scan     		PDF CL146 T0-92B 30Hz-15KHz x10-4 3fl0822t 146R

    8uk453

    Abstract: BUK453-60A BUK453-60B T0220AB
    Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 7110fi2b BUK453-60A/B T0220AB BUK453 8uk453 BUK453-60A BUK453-60B

    Untitled

    Abstract: No abstract text available
    Text: BCW29 PNP EPITAXIAL SILICON TRANSISTOR G EN ERA L PU RPO SE TRANSISTO R SOT-23 ABSO LU TE MAXIMUM RATINGS TA=25t: Characteristic Collector-Base Voltage Coliector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature


    OCR Scan     		PDF BCW29 OT-23 KST5088 -10/iA, -10iiA -10mA,

    LB37

    Abstract: No abstract text available
    Text: KSH32/32C PNP EPITAXIAL SILICO N TRANSISTOR G EN ERA L PURPO SE AMPLIFIER LOW SP EED SWITCHING APPLICATIONS D-PACK FOR SU R FA CE MOUNT APPLICATIONS D-PAK h • Load Formed for Surface Mount Apptication No Suffix • Straight Lead (I.P AC K,1 “ Suffix)


    OCR Scan     		PDF KSH32/32C TIP32 TIP32C KSH32 KSH32C LB37

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡m era « STHV102 STHV102FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STHV102 STHV102FI V dss RDS on Id 1000 V 1000 V < 3 .5 Q. < 3 .5 Q. 4.2 A 2.6 A • TYPICAL RDS(on) = 3.1 Q. . ■ . . . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STHV102 STHV102FI

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡m era « STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP30N06 S TP30N06FI V dss RDS on Id 60 V 60 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		PDF STP30N06 STP30N06FI TP30N06FI STP30N06/FI ISQWATT220

    Untitled

    Abstract: No abstract text available
    Text: STP5N30 STP5N30FI V dss RDS on 300 V 300 V E D ED TYP E STP5N30 STP5N30FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR A A ¿57 SGS-THOMSON ¡m era « Id 5 A 3.5 A . TYPICAL RDs(on) = 1.2 Q . . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		PDF STP5N30 STP5N30FI 30/FI ISQWATT220

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E STP30N05 S TP30N05FI SGS-THOMSON ¡m era « STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		PDF STP30N05 TP30N05FI STP30N05FI STP30N05/FI ISQWATT220

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡m era « STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP2N60 STP2N60FI V dss RDS on Id 600 V 600 V < 3 .5 Q. < 3 .5 Q. 2.9 A 2.2 A • TYPICAL RDS(on) = 3.2 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED


    OCR Scan     		PDF STP2N60 STP2N60FI V60/FI ISQWATT220

    Untitled

    Abstract: No abstract text available
    Text: Mkcm m an A M P com pany Radar Pulsed Power Transistor, 40W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-40M V2.00 Features • • • • • • • • NPN S ilicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d C lass C O p era tio n


    OCR Scan     		PDF 150ns PH1214-40M PH1214-40M

    bs170

    Abstract: No abstract text available
    Text: G en era l S e m i c o n d u c t o r _ BS170 DMOS Transistor N-Channel TO-226AA (TO-92) 0 . 1 8 1 (4 .6) 0 .1 4 2 (3 .6) Features_ • High input im pedance • High-speed switching • No m inority carrier storage tim e


    OCR Scan     		PDF BS170 O-226AA 20K/box 20K/box bs170

    Untitled

    Abstract: No abstract text available
    Text: jt f K m W an A M P com pany Radar Pulsed Power Transistor, 25W, 100|is Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-25M V2.00 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d C lass C O p era tio n


    OCR Scan     		PDF PH2729-25M TT90M50AGROUND ATC100A

    Untitled

    Abstract: No abstract text available
    Text: INFRARED LED + PHOTO TRANSISTOR TLP816 TLP816 M OTOR ROTATION AND IRIS DETECTION FOR C A M ERA TRACK DETECTION OF M ICRO FLO PPY DISK DRIVE • • • • Very small package High resolution : Slit width 0.4mm Detection gap : 1mm Directly mountable on PCB using the stand off of lead


    OCR Scan     		PDF TLP816 TLP816)

    2N7000

    Abstract: 2N7000/2N7000
    Text: G en era l S e m ic o n d u c t o r * 2N7000 DMOS Transistor N-Channel DMOS Transistors v Features_ _ • High input impedance • Low gate threshold voltage • Low drain-source ON-resistance • High-speed switching • No minority carrier storage time


    OCR Scan     		PDF 2N7000 20K/box 20K/box 2N7000 2N7000/2N7000

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E STP20N 10L S TP20N10LFI SGS-THOMSON ¡m era « STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss RDS on Id 100 V 100 V < 0.12 a < 0.12 a 20 A 12 A • TYPICAL RDS(on) = 0.09 Q . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STP20N TP20N10LFI STP20N10L STP20N10LFI ISOWATT220

    Untitled

    Abstract: No abstract text available
    Text: ¿ 5 SGS-THOMSON ¡m era « 7 STK12N05L STK12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E STK12N 05L STK12N 06L V dss RDS on Id 50 V 60 V < 0.15 a < 0.15 a 12 A 12 A . TYPICAL RDs(on) = 0.115 Q . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STK12N05L STK12N06L STK12N STK12N05L/STK12N06L OT-194 P032B

    2SC2522

    Abstract: 15D transistor 2SC2522A R2213 2C2523 2sa1073 2SC25 10ICI
    Text: FUJITSU MICROEL ECT RONICS 31E D B 374=^2 DOlbSlfl 3 S F M I r - 22-13 E f t . r . S F : PRODUCT PROFILE " U H T i C U 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION T he 2S C 2522/2S C 2522A/2SC 2523 are silicon NPN gen era l purpose, high pow er


    OCR Scan     		PDF r-22-13 2SC2522, 2C2522A, 2C2523 2SC2522/2SC2522A/2SC2523 2SC2522/2SC25 /2SC2523 300lis; 2SC2522A T-33-13 2SC2522 15D transistor R2213 2C2523 2sa1073 2SC25 10ICI

    Untitled

    Abstract: No abstract text available
    Text: PD -91736 International I R Rectifier IRG4RC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • S ho rt C ircuit Rated U ltraFast: O ptim ize d for high o p era ting fre q u e n cie s >5.0 kHz , and S hort


    OCR Scan     		PDF IRG4RC10KD -252A ratio233

    IQR fu 220 n

    Abstract: No abstract text available
    Text: PD - 91735 International löR R e ctifi 0 P IRG4RC10K PRELIMINARY Short Circuit Rated UitraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • S ho rt C ircu it Rated U itraFast: O ptim ized fo r high o p era ting fre q u e n cie s >5.0 kH z , and S ho rt C ircuit


    OCR Scan     		PDF IRG4RC10K -252A O-252AA IQR fu 220 n