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    TRANSISTOR EQUIVALENTS FOR 2N2222A Search Results

    TRANSISTOR EQUIVALENTS FOR 2N2222A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR EQUIVALENTS FOR 2N2222A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    520100204

    Abstract: SOC2222A 2N2222AT1 2N2222AHR SOC2222A smd SOC2222AHRB escc 5201-002-05 ESCC 5201-002 5201-002-05 Table of smd IC marking codes
    Text: 2N2222AHR Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BVCEO 40 V IC max 0.8 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C 3 1 1 2 2 3 TO-18 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified


    Original     		PDF 2N2222AHR 2N2222AHR 520100204 SOC2222A 2N2222AT1 SOC2222A smd SOC2222AHRB escc 5201-002-05 ESCC 5201-002 5201-002-05 Table of smd IC marking codes

    1k trimpot

    Abstract: poppet "am transmitter" the Poppet 500 milliwatt AM transmitter lm386 microphone 2N3819 equivalent ferrite core binocular NTE128 transistor 2n3053 hartley oscillator transistor equivalents for 2n2222a
    Text: the Poppet 500 milliwatt AM transmitter 1 of 1 the Poppet "The Poppet" is a half-watt AM transmitter designed by Mr. Doug Gibson of England. The original design was published in issue 84 of SPRAT, newsletter of the GQRP Club. The version shown here incorporates changes suggested by


    Original     		PDF LM386 BC109 NTE123A, 2N2222A) 2N3819 BFY51 NTE128, 2N3053) 1k trimpot poppet "am transmitter" the Poppet 500 milliwatt AM transmitter lm386 microphone 2N3819 equivalent ferrite core binocular NTE128 transistor 2n3053 hartley oscillator transistor equivalents for 2n2222a

    add 5201

    Abstract: ESCC 5201-002 SOC2222A 520100204 SOC2222ASW package LCC-3 escc 5201-002-05 smd marking codes list ESCC 5201/002 2N2222AHR
    Text: 2N2222AHR Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BVCEO 40 V IC max 0.8 A hFE at 10 V - 150 mA > 100 Operating temperature range - 65 °C to + 200 °C 1 2 3 TO-18 3 3 4 • Linear gain characteristics 1 1 2 2 ■ Hermetic packages ■ ESCC qualified


    Original     		PDF 2N2222AHR 2N2222AHR add 5201 ESCC 5201-002 SOC2222A 520100204 SOC2222ASW package LCC-3 escc 5201-002-05 smd marking codes list ESCC 5201/002

    SOC2222ASW

    Abstract: SOC2222A 2N2222AUB1 5201-002-05 ESCC 5201-002 SOC2222A smd smd marking codes list 2N2222AUB add 5201 520100204
    Text: 2N2222AHR Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BVCEO 40 V IC max 0.8 A hFE at 10 V - 150 mA > 100 Operating temperature range - 65 °C to + 200 °C 1 2 3 TO-18 3 3 4 • Linear gain characteristics 1 1 2 ■ Hermetic packages ■ ESCC qualified


    Original     		PDF 2N2222AHR 2N2222AHR SOC2222ASW SOC2222A 2N2222AUB1 5201-002-05 ESCC 5201-002 SOC2222A smd smd marking codes list 2N2222AUB add 5201 520100204

    520100204

    Abstract: 2N2222A* LCC SOC2222ASW
    Text: 2N2222AHR Hi-Rel 40 V - 0.8 A NPN bipolar transistor Features Parameter Value BVCEO 40 V IC max 0.8 A hFE at 10 V - 150 mA > 100 Operating temperature range - 65 °C to + 200 °C 1 2 3 TO-18 3 3 4 1 1 2 • Linear gain characteristics ■ Hermetic packages


    Original     		PDF 2N2222AHR 2N2222AHR 520100204 2N2222A* LCC SOC2222ASW

    J2N2222

    Abstract: 520100204
    Text: 2N2222AHR Hi-Rel 40 V - 0.8 A NPN transistor Datasheet — production data Features Parameter BVCEO min ESCC 1 JANS 40 V 2 3 50 V IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified


    Original     		PDF 2N2222AHR 2N2222AHR MIL-PRF19500 J2N2222 520100204

    JANSR2N2222A

    Abstract: J2N2222A JANS2N2222AUB 520100204 jansr2n2222aub J-2N2222A SOC2222AUB12SW J2N2222 soc2222 JANSR2N2222AUBG
    Text: 2N2222AHR Hi-Rel 40 V - 0.8 A NPN transistor Datasheet — production data Features Parameter BVCEO min ESCC 1 JANS 40 V 2 3 50 V IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified


    Original     		PDF 2N2222AHR 2N2222AHR MIL-PRF19500 JANSR2N2222A J2N2222A JANS2N2222AUB 520100204 jansr2n2222aub J-2N2222A SOC2222AUB12SW J2N2222 soc2222 JANSR2N2222AUBG

    Untitled

    Abstract: No abstract text available
    Text: 2N2222AHR Hi-Rel 40 V - 0.8 A NPN transistor Datasheet — production data Features Parameter BVCEO min ESCC 1 JANS 40 V 2 3 50 V IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified


    Original     		PDF 2N2222AHR 2N2222AHR

    SOC2222ASW

    Abstract: No abstract text available
    Text: 2N2222AHR Hi-Rel 40 V - 0.8 A NPN transistor Datasheet — production data Features Parameter BVCEO min ESCC 1 JANS 40 V 2 3 50 V IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified


    Original     		PDF 2N2222AHR 2N2222AHR MIL-PRF19500 SOC2222ASW

    520100204R

    Abstract: SOC2222ARHRT JANS2N2222AUB JANSR2N2222AUB JS2222 J2N2222A JANS2N2222AUBT JANSR2N2222AUBT 520100212R 520100204
    Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet — production data Features Parameter BVCEO min ESCC 1 JANS 40 V 2 3 50 V IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 2 • Hermetic packages LCC-3UB LCC-3 • ESCC and JANS qualified Pin 4 in LCC-3UB is connected to the metallic lid.


    Original     		PDF 2N2222AHR 2N2222AHR MIL-PRF19500 520100204R SOC2222ARHRT JANS2N2222AUB JANSR2N2222AUB JS2222 J2N2222A JANS2N2222AUBT JANSR2N2222AUBT 520100212R 520100204

    transistor equivalents for 2n2222a

    Abstract: AAT3685 Transistor 2N2222 usb adp ic 2N2222 NPN Transistor features 2N2222 equivalent of 2n2222 2n2222 equivalent transistor AAT3585 2N2222 z parameters
    Text: AN-119 AAT3685 Application Note Automatic Detection of USB Port vs. Wall Adapter Power Introduction The AAT3685 is a versatile Lithium-ion/polymer Li-ion/poly battery charge control IC capable of charging singlecell Li-ion/poly batteries at constant current rates up to 1A. The AAT3685 also utilizes an automatic charge reduction technique, allowing the device to safely operate from USB port power sources for charging batteries. In addition, this unique charger IC has the capability to be programmed for two discrete constant current charge levels.


    Original     		PDF AN-119 AAT3685 AN-119 transistor equivalents for 2n2222a Transistor 2N2222 usb adp ic 2N2222 NPN Transistor features 2N2222 equivalent of 2n2222 2n2222 equivalent transistor AAT3585 2N2222 z parameters

    Untitled

    Abstract: No abstract text available
    Text: APPLICATION NOTE Automatic Detection of USB Port vs Wall Adapter Power Introduction Skyworks AAT3685 is a versatile Lithium-ion/polymer Li-ion/poly battery charge control I/C capable of charging single-cell Li-ion/poly batteries at constant current rates up to 1 A. The


    Original     		PDF AAT3685 02742A

    520100204

    Abstract: No abstract text available
    Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 TO-18 3 IC max 0.8 A hFE at 10 V - 150 mA 100 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in LCC-3UB is connected to the metallic lid.


    Original     		PDF 2N2222AHR 2N2222AHR MIL-PRF19500 DocID16558 520100204

    J2N2222

    Abstract: soc2222
    Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 TO-18 3 IC max 0.8 A hFE at 10 V - 150 mA 100 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in LCC-3UB is connected to the metallic lid.


    Original     		PDF 2N2222AHR 2N2222AHR MIL-PRF19500 DocID16558 J2N2222 soc2222

    520100204

    Abstract: No abstract text available
    Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.


    Original     		PDF 2N2222AHR 2N2222AHR MIL-PRF19500 DocID16558 520100204

    SOC2222AHR

    Abstract: No abstract text available
    Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.


    Original     		PDF 2N2222AHR 2N2222AHR MIL-PRF19500 DocID16558 SOC2222AHR

    2N2222A 331

    Abstract: JANHCC2N2222A transistor equivalents for 2n2222a 2N2222A JANTXV JANHCB2N2222A 2N2221A 2N2221AL 2N2221AUA 2N2221AUB 2N2222A
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 May 2002. MIL-PRF-19500/255N 15 February 2002 SUPERSEDING MIL-PRF-19500/255M 20 March 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING,


    Original     		PDF MIL-PRF-19500/255N MIL-PRF-19500/255M 2N2221A, 2N2221AL, 2N2222A, 2N2222AL, 2N2221AUA 2N2222AUA, 2N2221AUB, 2N2222AUB, 2N2222A 331 JANHCC2N2222A transistor equivalents for 2n2222a 2N2222A JANTXV JANHCB2N2222A 2N2221A 2N2221AL 2N2221AUB 2N2222A

    max489 regulator

    Abstract: SMD10P05L MAX677CPP MAX335 MAX619 2N2222A motorola transistor data SMD10P05 2N2222A TO-92 maxim Mx2701 MAX677
    Text: Volume Fourteen NEWS BRIEFS Forbes rates Maxim 2 IN-DEPTH ARTICLE Selecting voltage references 3 DESIGN SHOWCASE Boost converter yields orderly shutdown 12 High-frequency switching IC powers portable telephone P-FET linear regulator has low dropout voltage


    Original     		PDF MAX335) MAX351/352/353) MAX361/362/364/365) MAX463/46 RS-485 RS-422 MAX488 MAX489 MAX487 max489 regulator SMD10P05L MAX677CPP MAX335 MAX619 2N2222A motorola transistor data SMD10P05 2N2222A TO-92 maxim Mx2701 MAX677

    AC127

    Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
    Text: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any


    OCR Scan     		PDF 2N24A 2N34A 2N38A 2N43A 2N44A 2N59C 2N60A 2N61A 2N61B OC77-309, AC127 CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan     		PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan     		PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent