Untitled
Abstract: No abstract text available
Text: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance
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BD239C
BD240C.
O-220
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BD239C
Abstract: BD240C JESD97 transistor marking 1a
Text: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance
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BD239C
BD240C.
O-220
BD239C
BD240C
JESD97
transistor marking 1a
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BD179
Abstract: 0016114E JESD97 ST BD179
Text: BD179 NPN power transistor Features • NPN transistor Applications ■ General purpose switching Description 3 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance
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BD179
OT-32
O-126)
BD179
0016114E
JESD97
ST BD179
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transistor bd442
Abstract: 0016114E BD440 BD441 BD442 JESD97 PNP POWER TRANSISTOR SOT-32
Text: BD442 PNP power transistor Features • PNP transistor Applications ■ Linear and switching industrial equipment Description This devices is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain
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BD442
BD441.
OT-32
transistor bd442
0016114E
BD440
BD441
BD442
JESD97
PNP POWER TRANSISTOR SOT-32
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BD439
Abstract: st bd441 BD441 BD442 JESD97 BD441 an
Text: BD441 NPN power transistor Features • NPN transistor Applications ■ Linear and switching industrial equipment Description This device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance
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BD441
BD442.
OT-32
BD439
st bd441
BD441
BD442
JESD97
BD441 an
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C 5074 transistor
Abstract: 2N5195 2N5192 NPN POWER TRANSISTOR SOT-32 c 5074
Text: 2N5195 Low voltage PNP power transistor Features • Low saturation voltage ■ PNP transistor Application ■ Audio, power linear and switching equipment Description 3 The device is manufactured in planar technology with “base island” layout. The resulting transistor
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2N5195
2N5192.
OT-32
C 5074 transistor
2N5195
2N5192
NPN POWER TRANSISTOR SOT-32
c 5074
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SC06960
Abstract: JESD97
Text: 2STN5551 Surface mounting NPN transistor Preliminary Data Features • NPN transistor in SOT-223 surface mounting package ■ Low VCE sat behavior 4 Application ■ 1 Linear amplifier 2 3 SOT-223 Description The device is an NPN transistor manufactured by
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2STN5551
OT-223
OT-223
SC06960
JESD97
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BUV48A
Abstract: JESD97 ST BUV48A
Text: BUV48A High voltage fast switching NPN power transistor Features • NPN transistor ■ High voltage capability ■ High current capability ■ Fast switching speed Applications 3 2 ■ Switching mode power supplies ■ Flyback and forward single transistor low power
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BUV48A
O-247
O-247
BUV48A
JESD97
ST BUV48A
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SC06960
Abstract: No abstract text available
Text: 2STN5551 Surface mounting NPN transistor Features • ■ NPN transistor in SOT-223 surface mounting package 4 Low VCE sat behavior Application ■ 1 Linear amplifier 2 3 SOT-223 Description The device is an NPN transistor manufactured by epitaxial planar technology.
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2STN5551
OT-223
OT-223
SC06960
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Untitled
Abstract: No abstract text available
Text: BD179 NPN power transistor Features • NPN transistor Applications ■ s ct General purpose switching u d o Description r P e The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance
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BD179
OT-32
O-126)
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BD238
Abstract: bd237 equivalent bd238 equivalent 0016114E BD237 Transistor B C 458
Text: BD238 Low voltage PNP power transistor Features • Low saturation voltage ■ PNP transistor Applications ■ Audio, power linear and switching applications 3 1 SOT-32 TO-126 Description The device is manufactured in planar technology with “Base Island” layout. The resulting transistor
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BD238
OT-32
O-126)
BD237.
BD238
bd237 equivalent
bd238 equivalent
0016114E
BD237
Transistor B C 458
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0015923C
Abstract: 2N6547 sc08820
Text: 2N6547 High voltage fast-switching NPN power transistor Datasheet - production data Features • • • • NPN transistor High voltage capability High current capability Fast switching speed Applications 1 • • 2 TO-3 Switched mode power supplies Flyback and forward single transistor low
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2N6547
2N6547
SC08820
DocID8252
0015923C
sc08820
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ZXTC6718MCTA
Abstract: DFN3020B-8 ZXTC6718MC marking db2 peak hold ic
Text: A Product Line of Diodes Incorporated ZXTC6718MC COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR Features Mechanical Data • • • • • • • • • • • NPN Transistor VCEO =20 RSAT = 47 mΩ IC = 4.5A PNP Transistor VCEO = -20V
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ZXTC6718MC
150mV
DFN3020B-8
J-STD-020
MIL-STD-202,
DS31927
ZXTC6718MCTA
DFN3020B-8
ZXTC6718MC
marking db2
peak hold ic
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ZXTC6717MC
Abstract: marking DA1 DFN3020B-8 ZXTC6717MCTA
Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 15V • RSAT = 45mΩ • IC = 4.5A PNP Transistor
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ZXTC6717MC
100mV
DFN3020B-8
J-STD-020
MIL-STD-202,
DS31926
ZXTC6717MC
marking DA1
DFN3020B-8
ZXTC6717MCTA
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DFN3020B-8
Abstract: ZXTC6719MC ZXTC6720MC ZXTC6720MCTA
Text: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 80V • RSAT = 68 mΩ • IC = 3.5A PNP Transistor
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ZXTC6720MC
-185mV
DFN3020B-8
J-STD-020
MIL-STD-202,
ZXTC6719MC
DS31929
DFN3020B-8
ZXTC6719MC
ZXTC6720MC
ZXTC6720MCTA
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DFN3020B-8
Abstract: ZXTC6719MC ZXTC6719MCTA
Text: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 50V • RSAT = 68 mΩ • IC = 4A PNP Transistor
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ZXTC6719MC
100mV
DFN3020B-8
J-STD-020
MIL-STD-202,
DS31928
DFN3020B-8
ZXTC6719MC
ZXTC6719MCTA
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2STP535
Abstract: ST DARLINGTON TRANSISTOR 2STP535FP alternator ic connection Alternator Voltage Regulator Darlington alternator voltage regulator schematic
Text: 2STP535FP NPN power Darlington transistor Features • Monolithic Darlington transistor with integrated antiparallel collector-emitter diode ■ Very high DC current gain Applications ■ Electronic ignition ■ AC-DC motor control ■ Alternator regulator
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2STP535FP
O-220FP
2STP535FP
O-220FP
2STP535
ST DARLINGTON TRANSISTOR
alternator ic connection
Alternator Voltage Regulator Darlington
alternator voltage regulator schematic
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NTC 220-11
Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,
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transisto25-735.
NTC 220-11
PHILIPS TRANSMITTING BIPOLAR
Philips Semiconductors Small-signal Transistors Selection guide
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FMMT634Q
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features
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FMMT634Q
900mA
625mW
FMMT734Q
AEC-Q101
DS37051
FMMT634Q
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. •
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FZT651Q
OT223
J-STD-020
300mV
MIL-STD-202,
DS36917
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23
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FMMT491Q
J-STD-020
MIL-STD-202,
DS37009
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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OCR Scan
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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2N1046
Abstract: germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e
Text: TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR HIGH-FREQUENCY POWER TRANSISTOR FOR MILITARY AND INDUSTRIAL APPLICATIONS 5H %I P* mechanical data This transistor is in a p recision-w elded, herm etically sealed enclosure. The mounting b ase provides an
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2N1046
DC-11
germanium power transistor
diode germanium tu 38 f
Germanium Transistor
Texas Germanium
639 TRANSISTOR PNP
Germanium power
diode germanium tu 38 e
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