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    TRANSISTOR EQUIVALENT PROGRAMM Search Results

    TRANSISTOR EQUIVALENT PROGRAMM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR EQUIVALENT PROGRAMM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application


    Original     		PDF KSC5603D O-220

    150a gto

    Abstract: QS 100 NPN Transistor 200H KSC5603D
    Text: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application


    Original     		PDF KSC5603D O-220 150a gto QS 100 NPN Transistor 200H KSC5603D

    j5304d

    Abstract: transistor j5304d j5304 FJD5304DTM J530 FJD5304D FJD5304DTF fjd5304
    Text: FJD5304D High Voltage Fast Switching Transistor FJD5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit


    Original     		PDF FJD5304D FJD5304D j5304d transistor j5304d j5304 FJD5304DTM J530 FJD5304DTF fjd5304

    j5304d

    Abstract: J5304 J530 FJU5304DTU free transistor and ic equivalent data o Transistor AND DIODE Equivalent list FJU5304D transistor j5304d
    Text: FJU5304D High Voltage Fast Switching Transistor FJU5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit


    Original     		PDF FJU5304D FJU5304D j5304d J5304 J530 FJU5304DTU free transistor and ic equivalent data o Transistor AND DIODE Equivalent list transistor j5304d

    Untitled

    Abstract: No abstract text available
    Text: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit


    Original     		PDF FJP9100 O-220

    FJP9100

    Abstract: NPN Transistor 600V TO-220
    Text: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit


    Original     		PDF FJP9100 O-220 FJP9100 NPN Transistor 600V TO-220

    J9100

    Abstract: No abstract text available
    Text: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit


    Original     		PDF FJP9100 O-220 FJP9100 O-220-3 FJP9100TU J9100

    Untitled

    Abstract: No abstract text available
    Text: 699440 High Voltage Power Darlington Transistor 699440 High Voltage Power Darlington Transistor Features • Built-in Resistor at Base-Emitter: R1 Typ. = 2000Ω • Built-in Resistor at Base: RB(Typ.) = 700±100Ω Equivalent Circuit C B RB 1 1.Base R1 TO-220


    Original     		PDF O-220

    Untitled

    Abstract: No abstract text available
    Text: 699440 High Voltage Power Darlington Transistor 699440 High Voltage Power Darlington Transistor Features • Built-in Resistor at Base-Emitter: R1 Typ. = 2000Ω • Built-in Resistor at Base: RB(Typ.) = 700±100Ω Equivalent Circuit C B RB 1 1.Base R1 TO-220


    Original     		PDF O-220

    Untitled

    Abstract: No abstract text available
    Text: FJV3110R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit • Built-in Bias Resistor R = 10 kΩ • Complement to FJV4110R Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit


    Original     		PDF FJV3110R FJV4110R OT-23 FJV3110RMTF OT-23 FJV3110R

    Untitled

    Abstract: No abstract text available
    Text: FJV3115R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit, • Built-in Bias Resistor R1 = 2.2 kΩ, R2 = 10 kΩ Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit


    Original     		PDF FJV3115R OT-23 FJV3115RMTF OT-23 FJV3115R

    Untitled

    Abstract: No abstract text available
    Text: FJV3115R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit, • Built-in Bias Resistor R1 = 2.2 kΩ, R2 = 10 kΩ Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit


    Original     		PDF FJV3115R OT-23 FJV3115RMTF OT-23

    Untitled

    Abstract: No abstract text available
    Text: FJN4309R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R = 4.7 kΩ • Complement to FJN3309R Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit


    Original     		PDF FJN4309R FJN3309R FJN4309RTA R4309 FJN4309R

    Untitled

    Abstract: No abstract text available
    Text: FJN4309R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R = 4.7 kΩ • Complement to FJN3309R Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit


    Original     		PDF FJN4309R FJN3309R FJN4309RTA R4309

    BDX53 equivalent

    Abstract: bdx53c equivalent bdx54c equivalent BDX53 BDX54 equivalent BDX53B BDX53A BDX53C BDX54 BDX54A
    Text: BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applications • Power Liner and Switching Applications Features • Power Darlington TR • Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit


    Original     		PDF BDX53/A/B/C BDX54, BDX54A, BDX54B BDX54C O-220 BDX53 BDX53A BDX53B BDX53C BDX53 equivalent bdx53c equivalent bdx54c equivalent BDX53 BDX54 equivalent BDX53B BDX53A BDX53C BDX54 BDX54A

    BDX53 equivalent

    Abstract: bdx53c equivalent
    Text: BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • • Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Features • • Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit


    Original     		PDF BDX53/A/B/C BDX54, BDX54A, BDX54B BDX54C O-220 BDX53 BDX53A BDX53B BDX53C BDX53 equivalent bdx53c equivalent

    TIP127

    Abstract: TIP127 circuit TIP126 TIP125 TIP127 equivalent tip127 darlington equivalent of TIP125 tip127 fairchild complementary darlington TIP126 circuit
    Text: TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor • Medium Power Linear Switching Applications • Complementary to TIP120/121/122 Equivalent Circuit C B TO-220 1 R1 1.Base 2.Collector Absolute Maximum Ratings* Symbol VCBO VCEO 3.Emitter R1 @ 8kW


    Original     		PDF TIP125/TIP126/TIP127 TIP120/121/122 O-220 TIP125 TIP126 TIP127 TIP125/TIP126/TIP127 TIP127 TIP127 circuit TIP126 TIP125 TIP127 equivalent tip127 darlington equivalent of TIP125 tip127 fairchild complementary darlington TIP126 circuit

    FJY3009R

    Abstract: FJY4009R
    Text: FJY3009R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=4.7KΩ • Complement to FJY4009R Equivalent Circuit C C S09 E B E B SOT - 523F Absolute Maximum Ratings *


    Original     		PDF FJY3009R FJY4009R FJY3009R FJY4009R

    FJY3011R

    Abstract: FJY4011R
    Text: FJY3011R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=22KΩ • Complement to FJY4011R Equivalent Circuit C C S11 E B E B SOT - 523F Absolute Maximum Ratings *


    Original     		PDF FJY3011R FJY4011R FJY3011R FJY4011R

    TIP147

    Abstract: tip147 transistor TIP146 tip146 equivalent tip145 equivalent tip147 fairchild tip147 equivalent equivalent transistor 1970 tip142 equivalent ASME-14
    Text: TIP145/TIP146/TIP147 PNP Epitaxial Silicon Darlington Transistor • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. Industrial Use Complement to TIP140/141/142 Equivalent Circuit


    Original     		PDF TIP145/TIP146/TIP147 TIP140/141/142 TIP145 TIP146 TIP147 TIP145/TIP146/TIP147 TIP147 tip147 transistor TIP146 tip146 equivalent tip145 equivalent tip147 fairchild tip147 equivalent equivalent transistor 1970 tip142 equivalent ASME-14

    J5502

    Abstract: KSC5502TU KSC5502 transistor npn 12V 1A Collector Current NPN Transistor 600V TO-220 vbe 12v, vce 600v NPN Transistor
    Text: KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application • Small Variance in Storage Time • Wide Safe Operating Area • Suitable for Electronic Ballast Application Equivalent Circuit C B 1 TO-220 E 1.Base Absolute Maximum Ratings *


    Original     		PDF KSC5502 O-220 KSC5502 J5502 KSC5502TU transistor npn 12V 1A Collector Current NPN Transistor 600V TO-220 vbe 12v, vce 600v NPN Transistor

    495220

    Abstract: linear application
    Text: 495220 NPN Epitaxial Silicon Darlington Transistor High Voltage & Medium Power Linear Application Equivalent Circuit C B TO-220 Marking : 495220 1 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings * Symbol TC=25°C unless otherwise noted Parameter Value


    Original     		PDF O-220 495220 linear application

    Untitled

    Abstract: No abstract text available
    Text: KSC5502D / KSC5502DT NPN Triple Diffused Planar Silicon Transistor • • • • • • 4 D-PAK Features Equivalent Circuit High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application


    Original     		PDF KSC5502D KSC5502DT O-220 KSC5502DTM C5502D O-252 KSC5502DTTU O-220

    j5304d

    Abstract: transistor j5304d j5304
    Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor Features • • • • • Equivalent Circuit High-Voltage, High-Speed Power Switch Applications Wide Safe Operating Area Built-in Free-Wheeling diode Suitable for Electronic Ballast Applications Small Variance in Storage Time


    Original     		PDF FJE5304D O-126 J5304D O-126 FJE5304DTU j5304d transistor j5304d j5304