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    TRANSISTOR EQUIVALENT FORMULA Search Results

    TRANSISTOR EQUIVALENT FORMULA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR EQUIVALENT FORMULA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    spice germanium diode

    Abstract: SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100
    Text: GENERAL Page Quality 2 Pro Electron type numbering system 2 Rating systems 3 Letter symbols 4 S-parameter definitions 7 Equivalent package designators 8 Transistor ratings 8 Thermal considerations 11 Power derating curves for SMDs Power derating curve for SOT23


    Original     		PDF OT143 SC-59 SC-70 SC-88 SC-75 OT223 BD839. O-202 spice germanium diode SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100

    1.5ke360

    Abstract: Transil 3br0 SO 342
    Text: APPLICATION NOTE  TRANSISTOR PROTECTION BY TRANSIL B. Rivet 1 - INTRODUCTION clamping voltage breakdown voltage equivalent resistance In a large number of applications, we find the circuit in FIG.1 where a TRANSIL is used to protect a switch which controls an inductive load.


    Original     		PDF

    1.5ke360

    Abstract: 1.5KE36P TRANSIL 15KE360 transistor equivalent formula 3br0
    Text: APPLICATION NOTE  TRANSISTOR PROTECTION BY TRANSIL B. Rivet 1 - INTRODUCTION clamping voltage breakdown voltage equivalent resistance In a large number of applications, we find the circuit in FIG.1 where a TRANSIL is used to protect a switch which controls an inductive load.


    Original     		PDF

    SLOA025

    Abstract: Mancini voltage divider rule ohm law
    Text: Understanding Basic Analog - Circuit Equations Application Report July 1999 Mixed Signal Products SLOA025 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


    Original     		PDF SLOA025 SLOA025 Mancini voltage divider rule ohm law

    SLOA025

    Abstract: sloa025a voltage divider rule
    Text: Application Report SLOA025A - April 2000 Understanding Basic Analog – Circuit Equations Ron Mancini Mixed Signal Products ABSTRACT This application report provides a basic understanding of analog circuit equations. Only sufficient math and physics are presented in this application report to enable understanding


    Original     		PDF SLOA025A SLOA025 voltage divider rule

    voltage divider rule

    Abstract: sloa025a "current divider rule" SLOA025
    Text: Application Report SLOA025A - April 2000 Understanding Basic Analog – Circuit Equations Ron Mancini Mixed Signal Products ABSTRACT This application report provides a basic understanding of analog circuit equations. Only sufficient math and physics are presented in this application report to enable understanding


    Original     		PDF SLOA025A voltage divider rule "current divider rule" SLOA025

    transistor x1

    Abstract: SMD led spice model list of P channel power mosfet buz siemens motor starter wiring schematic infineon cool MOSFET dynamic characteristic test Siemens 3TH 80 siemens datenbuch Siemens 3th Siemens 3TH 20-22 siemens profet
    Text: Thermal System Modeling Thermal Modeling of Power-electronic Systems Dr. Martin März, Paul Nance Infineon Technologies AG, Munich Increasing power densities, cost pressure and an associated greater utilization of the robustness of modern power semiconductors are making thermal system optimization more and more important in relation to electrical optimization. Simulation models


    Original     		PDF com/products/36/36 115ff. BTS550P transistor x1 SMD led spice model list of P channel power mosfet buz siemens motor starter wiring schematic infineon cool MOSFET dynamic characteristic test Siemens 3TH 80 siemens datenbuch Siemens 3th Siemens 3TH 20-22 siemens profet

    voltage divider rule

    Abstract: voltage divider norton theorem SLOA074 SLOD006A "current divider rule" Mancini norton amplifier transistor circuit thevenin theorem
    Text: Chapter 2 Review of Circuit Theory Literature Number SLOA074 Excerpted from Op Amps for Everyone Literature Number: SLOD006A Chapter 2 Review of Circuit Theory Ron Mancini 2.1 Introduction Although this book minimizes math, some algebra is germane to the understanding of


    Original     		PDF SLOA074 SLOD006A voltage divider rule voltage divider norton theorem SLOA074 SLOD006A "current divider rule" Mancini norton amplifier transistor circuit thevenin theorem

    3rd Overtone crystal equivalent circuit calculating

    Abstract: 3rd Overtone crystal equivalent circuit 3rd Overtone crystal equivalent circuit calculation TC4069UB TC4SU69F TC74VHCU04 TC7SHU04F TC7WHU04FU TC7WU04FU T167
    Text: Handling Notes For Proper Use of Crystal Units 1. Characteristics of crystal units The thickness of crystal vibrator of the AT cut crystal unit as described in the previous page differs depending on the overtone mode. 1 Relationship between thickness of crystal blank and oscillation frequency


    Original     		PDF 16MHz 3rd Overtone crystal equivalent circuit calculating 3rd Overtone crystal equivalent circuit 3rd Overtone crystal equivalent circuit calculation TC4069UB TC4SU69F TC74VHCU04 TC7SHU04F TC7WHU04FU TC7WU04FU T167

    7447 BCD to Seven Segment display

    Abstract: SDA2014 common anode 7-segment display 7 segment with 7447 7448 7 SEGMENT DISPLAY COMMON CATHODE 7 segment display lm3915 7448 bcd to seven segment decoder 4-DIGIT 7-SEGMENT LED DISPLAY MULTIPLEX 7447 7-segment display 7447 BCD to Seven Segment display common cathode
    Text: Drivers For Light Emitting Displays Appnote 24 by Dave Takagishi The purpose of this application note is to provide some information on the integrated circuits presently available to drive Light Emitting Diodes LED displays and how to interface them to the various displays.


    Original     		PDF XR-2201 XR-2202 XR-2203 XR-2204 CA3081 CA3082 UAA180 LM3914 LM3915 7447 BCD to Seven Segment display SDA2014 common anode 7-segment display 7 segment with 7447 7448 7 SEGMENT DISPLAY COMMON CATHODE 7 segment display lm3915 7448 bcd to seven segment decoder 4-DIGIT 7-SEGMENT LED DISPLAY MULTIPLEX 7447 7-segment display 7447 BCD to Seven Segment display common cathode

    of mosfet BUZ 384

    Abstract: BUZ MOSFET thyristor capacitive discharge ignition tig welding transistor CF leistungstransistoren BUZ 338 SIEMENS MOSFET BUZ Ignition weld tig SIEMENS THYRISTOR
    Text: Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 50 V . 1000 V und 10 mΩ . 8 Ω Power transistors in the 50 V to 1000 V and 10 mΩ to 8 Ω range


    Original     		PDF MIL-STD-883, MIL-STD-883; of mosfet BUZ 384 BUZ MOSFET thyristor capacitive discharge ignition tig welding transistor CF leistungstransistoren BUZ 338 SIEMENS MOSFET BUZ Ignition weld tig SIEMENS THYRISTOR

    RS7447

    Abstract: 7 segment with 7447 7448 7447 decoder 7448 7447 to 7 segment display 7 SEGMENT DISPLAY basic CIRCUIT alphanumeric segment decoder Transistor Equivalent list common cathode 7447 TTL 7447
    Text: Drivers For Light Emitting Displays Appnote 24 The purpose of this application note is to provide some information on the integrated circuits presently available to drive Light Emitting Diodes LED displays and how to interface them to the various displays.


    Original     		PDF 1-888-Infineon RS7447 7 segment with 7447 7448 7447 decoder 7448 7447 to 7 segment display 7 SEGMENT DISPLAY basic CIRCUIT alphanumeric segment decoder Transistor Equivalent list common cathode 7447 TTL 7447

    Philips Application Note ECO6907

    Abstract: AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 bd136 equivalent mosfet HF amplifier AN98030 HF power amplifier blf177
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power amplifier design POWER AMPLIFIER DESIGN NOTE TO SECTION 3 3.1 Classes of operation and biasing 3.1.1 For clarity in equations, identifiers such as R1, +jB2, −jX3 in drawings are written as


    Original     		PDF

    RF Transistor s-parameter

    Abstract: AN-60-040 8971C TRANSISTOR SAV 17 padmanabha SAV-581 RF transistors with s-parameters noise source diode kelvin 1102 NF50
    Text: UNDERSTANDING NOISE PARAMETER MEASUREMENTS AN-60-040 Overview This application note reviews noise theory & measurements and S-parameter measurements used to characterize transistors and amplifiers at Modelithics, Inc. Definitions and Theory The formulations in this note were derived from multiple sources, including References [1-3].


    Original     		PDF AN-60-040) 10log AN-60-040 M123981 AN60040 RF Transistor s-parameter 8971C TRANSISTOR SAV 17 padmanabha SAV-581 RF transistors with s-parameters noise source diode kelvin 1102 NF50

    DF1084

    Abstract: IN3754 driver AM 5766 transistor df1084 AM 5766 coil 2N3053 class B push pull power amplifier class A push pull power amplifier 2N3053 equivalent Stancor output transformer
    Text: Harris Semiconductor No. AN5766.1 Harris Intelligent Power April 1994 APPLICATION OF THE CA3020 AND CA3020A MULTIPURPOSE WIDE-BAND POWER AMPLIFIERS Authors: W.M. Austin and H.M. Kleinman The discussions in this Note are applicable to both integrated circuit types. The CA3020A can operate in all circuits


    Original     		PDF AN5766 CA3020 CA3020A CA3020. CA3020, CA3020A, 150mA char3020A DF1084 IN3754 driver AM 5766 transistor df1084 AM 5766 coil 2N3053 class B push pull power amplifier class A push pull power amplifier 2N3053 equivalent Stancor output transformer

    TC74HCU04A

    Abstract: TC7WHU04FU TC7WU04FU TC4069UB TC4SU69F TC74VHCU04 TC7SHU04F 3rd Overtone crystal equivalent circuit calculating 3rd Overtone crystal equivalent circuit calculation
    Text: Handling Notes 1. Shock & Drop • Vibration 2. Cleaning Do not inflict excessive shock and mechanical vibration that exceeds the norm, such as hitting or mistakenly dropping, when transporting and mounting on a board. There are cases when pieces of crystal break, and pieces that are used become


    Original     		PDF

    DF1084

    Abstract: driver AM 5766 transistor df1084 transistor intercom circuit in3754 CA3020 2N2869 2N3053 equivalent AM 5766 ca3020 equivalent
    Text: Application Of The CA3020 And CA3020A Multipurpose Wide-band Power Amplifiers Application Note April 1994 AN5766.1 The discussions in this Note are applicable to both integrated circuit types. The CA3020A can operate in all circuits shown for the CA3020. The CA3020, on the other hand, has


    Original     		PDF CA3020 CA3020A AN5766 CA3020A CA3020. CA3020, CA3020A, 150mA DF1084 driver AM 5766 transistor df1084 transistor intercom circuit in3754 2N2869 2N3053 equivalent AM 5766 ca3020 equivalent

    MOSC

    Abstract: No abstract text available
    Text: Handling Notes 1. Shock & Drop • Vibration 2. Cleaning Do not inflict excessive shock and mechanical vibration that exceeds the norm, such as hitting or mistakenly dropping, when transporting and mounting on a board. There are cases when pieces of crystal break, and pieces that are used become


    Original     		PDF

    laser diode spice modeling

    Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
    Text: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these


    Original     		PDF 42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136

    Untitled

    Abstract: No abstract text available
    Text: Handling Notes 1. Shock & Drop • Vibration 2. Cleaning Do not inflict excessive shock and mechanical vibration that exceeds the norm, such as hitting or mistakenly dropping, when transporting and mounting on a board. There are cases when pieces of crystal break, and pieces that are used become


    Original     		PDF

    J300 Siliconix

    Abstract: 10112N 2n Siliconix FET U257 dual FET 2N4393 2N4416 2N5912 J300 U232 Siliconix Application Note
    Text: z> B Siliconix g APPLICATION NO TE FETs for Video Amplifiers INTRODUCTION For this analysis the gate source leakage resistance has been ignored due to its high value. Redrawing the input equivalent circuit as a simple parallel RC combination results in The field-effect transistor lends itself well to video amplifier


    OCR Scan     		PDF

    mp4001

    Abstract: MP4001 equivalent transistor equivalent table bipolar transistor NEC MP4501 mp4001 tran
    Text: Power Transistor M odule and Power MOS-FET M odule As the density of electronic part mounting continues to increase in the field of discrete products, miniaturization of the hybrid devices named super mini and power mini is advancing rapidly. There are also calls for miniaturization and


    OCR Scan     		PDF 700cm1 300cmJ mp4001 MP4001 equivalent transistor equivalent table bipolar transistor NEC MP4501 mp4001 tran

    MG400H1FL1

    Abstract: TOSHIBA Thyristor calculation of IGBT snubber transistor circuit design
    Text: 3.1 GTR Module Ratings The main maximum rating items include the emitter, base and collector currents of tran­ sistors, voltage between terminals, power dissi­ pation, junction temperature, storage tempera­ ture, etc. These characteristics are all closely


    OCR Scan     		PDF

    of mosfet BUZ 384

    Abstract: simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn
    Text: SIEMENS Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 5 0 V . 1000 V und 10 m fi . 8 Q Power transistors in the 50 V to 1000 V and 10 mQ to 8 Q range


    OCR Scan     		PDF SIL00001 SIL00002 MILSTD-883, of mosfet BUZ 384 simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn