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    TRANSISTOR ELECTRONIC BALLAST USING 13005A Search Results

    TRANSISTOR ELECTRONIC BALLAST USING 13005A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ELECTRONIC BALLAST USING 13005A Datasheets Context Search

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    13005a

    Abstract: transistor 13005a 13005B transistor 13005b ST13005 transistor transistor Electronic ballast using 13005A st 13005a 13005A TRANSISTOR transistor 13005A FROM ST e 13005a
    Text: ST13005 High voltage fast-switching NPN power transistor Features • Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications 3 ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies


    Original
    PDF ST13005 O-220 13and 13005a transistor 13005a 13005B transistor 13005b ST13005 transistor transistor Electronic ballast using 13005A st 13005a 13005A TRANSISTOR transistor 13005A FROM ST e 13005a