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    TRANSISTOR ELECTRONIC Search Results

    TRANSISTOR ELECTRONIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ELECTRONIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR BB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The BB1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic


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    PDF C11531E)

    5bb1

    Abstract: C11531E
    Text: DATA SHEET COMPOUND TRANSISTOR BB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The BB1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic


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    PDF C11531E) 5bb1 C11531E

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR PNP TO-92 FEATURE z PNP silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the NPN transistor 2N3904 is


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    PDF 2N3906 2N3904 OT-23 MMBT3906

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR NPN TO-92 FEATURE z NPN silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the PNP transistor 2N3906 is


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    PDF 2N3904 2N3906 OT-23 MMBT3904 100mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR PNP TO-92 FEATURE z PNP silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the NPN transistor 2N3904 is


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    PDF 2N3906 2N3904 OT-23 MMBT3906 62-10mA -50mA -100mA -50mA, -10mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR NPN TO-92 FEATURE z NPN silicon epitaxial planar transistor for switching and amplifier applications z As complementary type, the PNP transistor 2N3906 is


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    PDF 2N3904 2N3906 OT-23 MMBT3904 100mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Power management Dual-transistors UMZ1N TRANSISTOR SOT-363 DESCRIPTION Silicon epitaxial planar transistor FEATURES 2SA1037AK and 2SC2412K are housed independently in a package. z Transistor elements independent, eliminating interference.


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    PDF OT-363 OT-363 2SA1037AK 2SC2412K Temperature25â -50mA 100MHz

    transistor 2n3904

    Abstract: transistor 2N3906 2N3906 TRANSISTOR 2N3906 2N3906 PNP transistor 2n3906 TRANSISTOR pnp 2n3906 PNP transistor DC current gain PNP switching transistor 2N3906 mhz 2n3906 equivalent transistor 2N3904
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR PNP TO-92 FEATURE z PNP silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the NPN transistor 2N3904 is


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    PDF 2N3906 2N3904 OT-23 MMBT3906 -10mA -50mA -100mA -50mA, transistor 2n3904 transistor 2N3906 2N3906 TRANSISTOR 2N3906 PNP transistor 2n3906 TRANSISTOR pnp 2n3906 PNP transistor DC current gain PNP switching transistor 2N3906 mhz 2n3906 equivalent transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR NPN TO-92 FEATURE z NPN silicon epitaxial planar transistor for switching and amplifier applications z As complementary type, the PNP transistor 2N3906 is


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    PDF 2N3904 2N3906 OT-23 MMBT3904 100mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR NPN TO-92 FEATURE z NPN silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the PNP transistor 2N3906 is


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    PDF 2N3904 2N3906 OT-23 MMBT3904

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR( NPN ) TO—92 FEATURE •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is


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    PDF 2N3904 2N3906 OT-23 MMBT3904LT1 100KHz 100MHz

    C11531E

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR BP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching The BP1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic appliances and OA


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    PDF C11531E) C11531E

    2n3904 transistor

    Abstract: 2N3904, transistor 2n3904 MMBT3904 jiangsu 2n3904 TRANSISTOR npn transistor 2n3906 PNP switching transistor 2N3906 mhz 2n3906 npn 2n3904 TRANSISTOR PNP 2N3906
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR NPN TO-92 FEATURE z NPN silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the PNP transistor 2N3906 is


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    PDF 2N3904 2N3906 OT-23 MMBT3904 100mA 100MHz 2n3904 transistor 2N3904, transistor 2n3904 MMBT3904 jiangsu 2n3904 TRANSISTOR npn transistor 2n3906 PNP switching transistor 2N3906 mhz 2n3906 npn 2n3904 TRANSISTOR PNP

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR PNP TO-92 FEATURE z PNP silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the NPN transistor 2N3904 is


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    PDF 2N3906 2N3904 OT-23 MMBT3906 -10mA -50mA -100mA -50mA,

    ic 353

    Abstract: KTC601U SOT-353 SOT-353 Q2 marking LGR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 KTC601U Plastic-Encapsulate Transistors DUAL TRANSISTOR NPN+NPN Features z A super-minimold package houses 2 Transistor z Excellent temperature response between these 2 transistor z High pairing property in hFE.


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    PDF OT-353 KTC601U 100mA ic 353 KTC601U SOT-353 SOT-353 Q2 marking LGR

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-343 T11 Plastic-Encapsulate Transistors DUAL TRANSISTOR NPN+NPN FEATURES ∙ A super-minimold package houses 2 transistor ∙ Excellent temperture response between these 2 transistor ∙ High pairing property in hFE


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    PDF OT-343 100mA 30MHz

    SOT333

    Abstract: SOT423 sot468 thermal compound wps II TO metal package aluminum kovar SOT439 Transistor Packages sot262 SOT443 rf transistor smd pages
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 4 RF and microwave transistor packages RF AND MICROWAVE TRANSISTOR PACKAGES handbook, halfpage The packages of electronic devices are, in general, designed to: metal cap – Protect the electronics from mechanical damage


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    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors built-in resistors EMD38 General purpose digital transistor (NPN+PNP) SOT-563 FEATURES  DTr1:NPN digital transistor,DTC114Y DTr2:PNP digital transistor,DTA113Z  Mounting possible with SOT-563 automatic mounting machines


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    PDF EMD38 OT-563 DTC114Y DTA113Z OT-563 -20mA -10mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N4126 TRANSISTOR PNP 1. EMITTER FEATURES z PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications. z As Complementary Type, The NPN Transistor 2N4124 is


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    PDF 2N4126 2N4124 -50mA -50mA -10mA, 100MHz

    KTA501U

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 KTA501U Plastic-Encapsulate Transistors DUAL TRANSISTOR PNP+PNP Features z A super-minimold package houses 2 Transistor z Excellent temperature response between these 2 transistor z High pairing property in hFE.


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    PDF OT-353 KTA501U to150 -10mA -100mA -10mA KTA501U

    npn transistor 433 Mhz

    Abstract: S 170 TRANSISTOR transistor 625 MPSA06 MPSA56 12G-V transistor cb 170
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MPSA06 Features l NPN Small Signal Transistor 625 mW NPN Silicon Epitaxial planar Transistor for switching and amplifier applications l As complementary type, the PNP transistor is MPSA56


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    PDF MPSA06 MPSA56 100mA, 100mA 100MHz npn transistor 433 Mhz S 170 TRANSISTOR transistor 625 MPSA06 MPSA56 12G-V transistor cb 170

    BUH51

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 UHC-400
    Text: ON Semiconductor BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state–of–art die designed for use in 50 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large


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    PDF BUH51 BUH51 r14525 BUH51/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105 UHC-400

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductor BUH150 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state−of−art die designed for use in 150 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large


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    PDF BUH150 BUH150

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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