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    TRANSISTOR EC5724 Search Results

    TRANSISTOR EC5724 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR EC5724 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BP 109 transistor

    Abstract: transistor BP 109 transistor ec5724 transistor GaAs FET s parameters transistor BP 915 EC5724
    Text: EC5724 Wide Band Power FET GaAs Field Effect Transistor Description S The EC5724 device,available in chip form, is a power GaAs Field Effect Transistor, designed for wideband oscillator and amplifier applications, up to 18GHz. Individual via hole connection is made


    Original     		EC5724 EC5724 18GHz. 24dBm 30dBm 18GHz DSEC57247003 BP 109 transistor transistor BP 109 transistor ec5724 transistor GaAs FET s parameters transistor BP 915 PDF

    TRANSISTOR C 557 B

    Abstract: No abstract text available
    Text: EC5724 W I D E B A N D P O W E R F ET G a A s F I E L D E F F E C T T R A N S I S T O R FEATURES • Gain at 1dB compression point : single cell 600 urn : 8dB at 18GHz four cells (2400 [im) : 7dB at 18GHz • Output power at 1dB compression po in t: single cell (600nm) : 24dBm


    OCR Scan     		EC5724 600nm) 24dBm 30dBm 18GHz 18GHz EC5724 18GHz. EC5724-99A/00 TRANSISTOR C 557 B PDF