TRANSISTOR EB 525 Search Results

TRANSISTOR EB 525 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR EB 525 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor EB 525 Abstract: No abstract text available Text: KSH117 PNP SILICON DARLINGTON TRANSISTOR D-PACK FO R S U R F A C E MOUNT APPLICATIONS D-PAK • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ - 1" Suffix)	OCR Scan	KSH117 TIP117 transistor EB 525	PDF
DM2T5040 Abstract: DMZT5040 DM2T CW-70 54L51 Text: POUEREX INC "TA dF \| 72^4^1 0Ü D27 01 t. T -33-T 5 ' DM2T5040 » Powerex, Inc., Hlllls Street, Young wood, Pennsylvania 15697 412 925-7272 High Pow-R-Disc Transistor 400 Amperes/500 Volts Features:. □ High hFE □ Hermetic Case □ LOW VcE(eal) □ Fast Switching	OCR Scan	0DD57D1 T-33-T5 DM2T5040 Amperes/500 DM2T5040, DM2T5040 50CTERISTICS 7Sc14b51 DMZT5040 DM2T CW-70 54L51	PDF
smd npn 2n2222 Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200 Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.	OCR Scan	2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200	PDF
str 40200 Abstract: No abstract text available Text: G E SOLID STATE 01 D E j 3A7S0Ö1 GGlMblS «4 \| CA3096, CA3096A, CA3096C “T ' H 3 Z S N-P-N/P-N-P Transistor Array Five-Independent Transistors: Three n-p-n and Two p-n-p Applications:	OCR Scan	CA3096, CA3096A, CA3096C CA3096H str 40200	PDF
5252 F ic Abstract: ic 5252 F c 5252 transistor Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807t OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN: IS21 EI2 = 9 dB TYP at 2 GHz	OCR Scan	NE686 UPA807t UPA807T UPA807T-T1 5252 F ic ic 5252 F c 5252 transistor	PDF
transistor 1005 oj Abstract: transistor power rating 5w ATC100A PH3135-5S PIN07 Text: M tiK O V . J r an A M P com pany Radar Pulsed Power Transistor, 5W, 2^s Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V2.00 . .900 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry	OCR Scan	PH3135-5S ATC100A transistor 1005 oj transistor power rating 5w ATC100A PH3135-5S PIN07	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A 2SD1525 2 S D 1 525 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE D ARLING TO N HIGH CURRENT SW ITCHING APPLICATIONS Unit in mm • • • High Collector Current : Iq = 30A High DC Current Gain : hjrE(l) = 1000 (Min.) Monolithic Construction with Built-In Base-Emitter Shunt	OCR Scan	2SD1525 20-5M	PDF
W1P 59 transistor Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors	OCR Scan	197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn	PDF
2SD947 Abstract: Q005 2SD947 j Transistor 126m Text: ROHN CO K7 > V 7 LTD MDE 7020^=1 D Q00SÖ23 $ / J ransistors 1 HRHN 2SD947 - 7 - Z Z - 2 ? i t 0* * v7 \,-yy—m npn ->•;=\>#-v>b> ‘ S H ^ S ^ ia 'tiffl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor	OCR Scan	2SD947 O-126M 2SD947 T-27-15 Q005 2SD947 j Transistor 126m	PDF
TRANSISTOR BC 252 Abstract: BUV56 L05A schematic diagram UPS 15V 5A Power Supply Schematic 380v UPS diagram Scans-007954 Text: 7^5gS37 P05A771 G • ^ T ' 3 3 - 3 SGS-THOMSON B U V 56 s lü iO T K s K S S G S-THOMSON 3GE D FAST SWITCHING POWER TRANSISTOR ■ SUITABLE FOR SWITCH MODE POWER SUP PLY, UPS, DC AND AC MOTOR CONTROL DESC RIPTIO N High voltage, high speed transistor suited for use on	OCR Scan	ppgfl771 BUV56 T-33-13 TRANSISTOR BC 252 BUV56 L05A schematic diagram UPS 15V 5A Power Supply Schematic 380v UPS diagram Scans-007954	PDF
2N4401 Abstract: 2N4400 2N4401 transistor 2N4401 - TRANSISTOR Text: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V c eo = 4 0 V * Collector Dissipation: P c max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Em itter Voltage	OCR Scan	2N4400/4401 625mW 100MA, 002S0H6 2N4401 2N4400 2N4401 transistor 2N4401 - TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T a = 25 1C Sym bol C h aracte ristic Collector Emitter Voltage at R b e = 1 Kohm Collector Emitter Voltage Collector Emitter Voltage	OCR Scan	BC636/638/640 BC635/637/639 BC636 BC638 BC640	PDF
Untitled Abstract: No abstract text available Text: m 2N6678 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6678 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE T O - 3 INCHES 875 MAX. A MAXIMUM RATINGS B 135 MAX. .2 5 0- 043 DIA. C MILLIMETERS 22.23 MAX.	OCR Scan	2N6678 2N6678	PDF
bc870 Abstract: Transistor BC870-40 BFR92a MARKING P2 TRANSISTOR MARKING CODE IAM marking IAM transistor sot-23 Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.	OCR Scan	OT323 BFR92AW BFR92A. BFR92AW BC870 7110fiSL bc870 Transistor BC870-40 BFR92a MARKING P2 TRANSISTOR MARKING CODE IAM marking IAM transistor sot-23	PDF

Untitled Abstract: No abstract text available Text: Mil W: III! 2N3700DCSM SEME LAB HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 2 .29 ± 0 .20 (0 .09 ± 0 .00 8) 1 .40 ± 0.15	OCR Scan	2N3700DCSM	PDF
Untitled Abstract: No abstract text available Text: MT6L51AT TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE M T 6 L 5 1 AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES	OCR Scan	MT6L51AT 2SC5256 5256FT) MT3S03AS MT3S03AT)	PDF
marking 1GL Abstract: marking G SOT323 Transistor BFR92A BFR92AW Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.	OCR Scan	BFR92AW OT323 BFR92AW BFR92A. MBC870 7110flSb marking 1GL marking G SOT323 Transistor BFR92A	PDF
2SC5256 Abstract: MT3S04AS MT3S04AT MT6L50AT Text: MT6L50AT TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L50AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES	OCR Scan	MT6L50AT 2SC5256 5256FT) MT3S04AS MT3S04AT) 2SC5256 MT3S04AS MT3S04AT MT6L50AT	PDF
2SC5256 Abstract: MT3S03AS MT3S03AT MT6L51AT Text: MT6L51AT TO SHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE M T 6 L 5 1 AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES	OCR Scan	MT6L51AT MT6L51 2SC5256 5256FT) MT3S03AS MT3S03AT) 2SC5256 MT3S03AS MT3S03AT MT6L51AT	PDF
BFG55A Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors	OCR Scan	LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60	PDF
Germanium drift transistor Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor Text: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of	OCR Scan	orporation/464 CH-8105 Germanium drift transistor 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor	PDF
Untitled Abstract: No abstract text available Text: / = T SGS-THOMSON [L i M S B U V 56 FAST SWITCHING POWER TRANSISTOR • SUITABLE FOR SWITCH MODE POWER SUP PLY, UPS, DC AND AC MOTOR CONTROL D E S C R IP T IO N High voltage, high speed transistor suited for use on the 220 and 380V mains. ABSOLUTE MAXIMUM RATINGS	OCR Scan	BUV56	PDF
Untitled Abstract: No abstract text available Text: O rd e rin g n u m b e r : EN 590B N 0.59OB SANYO /1_NPN Epitaxial Planar Silicon2SD894 Transistor 25V/1.5A Driver Applications A Use . Motor drive, printer hummer drive, relay drive, voltage regulator controller. Features . High DC Current Gain not less than 4000 .	OCR Scan	2SD894 6200MO/5257KI/6082KI	PDF
Untitled Abstract: No abstract text available Text: RC144ATÌ and RC144ATL * Rockwell RC144ATÌ and RC144ATL Integrated High Speed Data/Fax/Voice Modem Device Set INTRODUCTION FEATURES The Rockwell RC144ATi and RC144ATL device sets are low cost, integrated 14400 bps data and fax modems with options that support voice and world-wide operation.	OCR Scan	RC144ATÃ RC144ATL RC144ATi RC144ATL RC144ATi/ATL)	PDF

TRANSISTOR EB 525 Search Results

TRANSISTOR EB 525 Result Highlights (5)

TRANSISTOR EB 525 Datasheets Context Search

transistor EB 525

DM2T5040

smd npn 2n2222

str 40200

5252 F ic

transistor 1005 oj

Untitled

W1P 59 transistor

2SD947

TRANSISTOR BC 252

2N4401

Untitled

Untitled

bc870

Untitled

Untitled

marking 1GL

2SC5256

2SC5256

BFG55A

Germanium drift transistor

Untitled

Untitled

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