Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR EB 102 Search Results

    TRANSISTOR EB 102 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR EB 102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n1016

    Abstract: 2n1016c
    Text: 2N1016B, 2N1016C, 2N1016D Qualified Levels: JAN NPN Silicon High-Power Transistor Available on commercial versions Qualified per MIL-PRF-19500/102 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Important: For the latest information, visit our website http://www.microsemi.com.


    Original     		PDF 2N1016B, 2N1016C, 2N1016D MIL-PRF-19500/102 2N1016 2n1016c

    Untitled

    Abstract: No abstract text available
    Text: 2N1016B, 2N1016C, 2N1016D Qualified Levels: JAN NPN Silicon High-Power Transistor Available on commercial versions Qualified per MIL-PRF-19500/102 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Important: For the latest information, visit our website http://www.microsemi.com.


    Original     		PDF 2N1016B, 2N1016C, 2N1016D MIL-PRF-19500/102 2N1016 high-reliabilit32

    TACAN

    Abstract: No abstract text available
    Text: 10500 500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz GENERAL DESCRIPTION The 10500 is a high power COMMON BASE BiPolar transistor. It is designed for pulsed systems in the frequency band 1025 - 1150 MHz, with the pulse width and duty required for MODE-S, TACAN & TCAS applications.


    Original     		PDF 25oC2 TACAN

    TACAN

    Abstract: No abstract text available
    Text: 10500 500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz GENERAL DESCRIPTION The 10500 is a high power COMMON BASE BiPolar transistor. It is designed for pulsed systems in the frequency band 1025 - 1150 MHz, with the pulse width and duty required for MODE-S, TACAN & TCAS applications.


    Original     		PDF 25oC2 TACAN

    MRF476

    Abstract: No abstract text available
    Text: I MOTOROLA SC XSTRS/R F 4bE D • b3b7ES4 O O ^ b ä ä 2 ■ PIOTb MOTOROLA m SEMICONDUCTOR I TECHNICAL DATA MRF476 The R F L in e 3 .0 W (P E P I- 3 .0 W (CW ) - 3 0 M H z RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . des ig n e d p rim a rily fo r use in sin g le s id eb an d lin e a r a m p lifie r


    OCR Scan     		PDF MRF476 MRF476

    transistor kc 2026

    Abstract: LDL8 sms ic 1SV50 kc 2026 mboc 2N916 N429
    Text: M I L -S -1 9 5 0 0 /2 7 U NAVI 14 F eb ru a ry 1964 «SUPERSEDING K E L -S -19 5 0 0 /2 7 1 (NAVI) 21 O c to b e r 1 9 6 3 (S e e 6 . 2 ) MILITARY SPECIFICATO« SEMICONDUCTOR DEVICE, TRANSISTOR TYPE SN916 I. SCOPE 1.1 'This Specification eo*«rrs the.detall regni renw tr-for-an N PN etlleon tm s ls to r and lsln -accorfeace


    OCR Scan     		PDF MIL-S-19500/27U KEL-S-19500/271 2N916 MIL-S-19500, transistor kc 2026 LDL8 sms ic 1SV50 kc 2026 mboc 2N916 N429

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30CY-H Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		PDF QM30CY-H 30CY-H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Forklifts, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm OC BO - m -M - - < EO ó ÓE BX M4 Feb. 1999 ♦ MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES


    OCR Scan     		PDF QM600HD-M

    induction heater circuit diagram

    Abstract: induction heater circuit
    Text: MITSUBISHI TRANSISTOR MODULES QM30HC-2H INDUCTION HEATER USE NON-INSULATED TYPE QM30HC-2H Ic Collector current. 30A Vcex Collector-emitter voltage 1600V hFE DC current gain. 75 Non-lnsulated Type APPLICATION


    OCR Scan     		PDF QM30HC-2H induction heater circuit diagram induction heater circuit

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM100TX1-H HIGH POWER SWITCHING USE INSULATED TYPE Q M 100TX1-H APPLICATION Inverters, Servo drives, DC motor controllers, CVCF, NC equipment, Welders OUTLINE DRAW ING & C IRCUIT DIAG RAM D im ensions in mm Feb. 1999 ♦ MITSUBISHI


    OCR Scan     		PDF QM100TX1-H 100TX1-H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-24K lc Collector current. 100A Vcex Collector-emitter voltage 1200V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM100DY-24K E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM15TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM15TD-H Ic Collector current. 15A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		PDF QM15TD-H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50HY-2H Ic Collector current. 50A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM50HY-2H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM100HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM100HY-2H Ic Collector current. 100A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM100HY-2H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50TX-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TX-H • Ic Collector current. 50A • Vcex Collector-emitter voltage.600V • hFE DC current gain. 75 • Insulated Type


    OCR Scan     		PDF QM50TX-H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30TB-24 MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-24 Ic Collector current. 30A Vcex Collector-emitter voltage 1200V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM30TB-24 E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES Q M 1 0 0 H C - M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM100HC-M • Ic • Vcex A •> A # • hFE Collector current. . 100A Collector-emitter v o lta g e . . 350V DC current gain. . 100


    OCR Scan     		PDF QM100HC-M

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM100DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-2HBK lc Collector current. 100A Vcex Collector-emitter voltage 1000V hFE DC current gain.750 Insulated Type UL Recognized


    OCR Scan     		PDF QM100DY-2HBK E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM1OODY-HBK HIGH POWER SWITCHING USE INSULATED TYPE QM1 OODY-HBK Ic Collector current. 100A Vcex Collector-emitter voltage.600V hFE DC current gain. 750 Insulated Type


    OCR Scan     		PDF E80276 E80271 QM100DY-HBK

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM20DX-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM20DX-H Ic Collector current. 20A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		PDF QM20DX-H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75HA-H HIGH POWER SWITCHING USE INSULATED TYPE QM75HA-H Collector current. . 75A • V c e x Collector-emitter voltage. . 600V • hFE DC current gain. . 75 • Insulated Type


    OCR Scan     		PDF QM75HA-H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE Q M 300H A-2H lc Collector current. 300A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM300HA-2H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-2H Ic Collector current. 30A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM30TB-2H E80276 E80271

    SOT446A

    Abstract: LWE2015R
    Text: Philips Semiconductors Product specification NPN microwave power transistor LWE2015R PINNING - SOT446A FEATURES • In te rd ig ita te d s tru c tu re p ro v id e s high e m itte r e ffic ie n c y PIN • D iffu se d e m itte r b a lla s tin g re s is to r p ro v id e s e x c e lle n t


    OCR Scan     		PDF LWE2015R OT446A OT446A. SOT446A LWE2015R