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    TRANSISTOR E42 Search Results

    TRANSISTOR E42 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR E42 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRE LIM INAR Y DA TAS HEET SOT-523 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Green Product This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a


    Original     		PDF OT-523 DB-100

    transistor equivalent book

    Abstract: transistor e42 marking E42 transistor ic equivalent book
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSC123JNND03 TRANSISTOR WBFBP-03B 1.2x1.2×0.5 unit: mm DESCRIPTION NPN Digital Transistor TOP I FEATURES 1) Built-in bias resistors enable the configuration of an


    Original     		PDF WBFBP-03B TSC123JNND03 WBFBP-03B 100MHz transistor equivalent book transistor e42 marking E42 transistor ic equivalent book

    40841

    Abstract: 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent CA3096A
    Text: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C 40841 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSC123JNND03 WBFBP-03B TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Digital Transistor I FEATURES 1) Built-in bias resistors enable the configuration of an inverter circuit


    Original     		PDF WBFBP-03B TSC123JNND03 WBFBP-03B 100MHz

    AN5296 Application of the CA3018 Integrated

    Abstract: an5296 ca314 DE ca314 application notes AN5296 Application note CA3018 "Application of the CA3018" AN5296 Application of the CA3018 Integrated-Ci CA3183E CA318 CA3083
    Text: [ /Title CA31 46, CA314 6A, CA318 3, CA318 3A /Subject (HighVoltage Transistor Arrays ) /Autho r () /Keywords (Intersil Corporation, five, transistor array, low cost NPN, 40V, 50ma 75ma, mhz ft, high volt- CA3146, CA3146A, CA3183, CA3183A TM Data Sheet April 2000


    Original     		PDF CA314 CA318 CA3146, CA3146A, CA3183, CA3183A CA3183A, AN5296 Application of the CA3018 Integrated an5296 ca314 DE ca314 application notes AN5296 Application note CA3018 "Application of the CA3018" AN5296 Application of the CA3018 Integrated-Ci CA3183E CA318 CA3083

    40841 MOSFET

    Abstract: 2158D CA3096 CA3096E equivalent CA3096A CA3096AE 40841 dual gate mosfet CA3096AM96 CA3096C CA3096E
    Text: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C 40841 MOSFET 2158D CA3096 CA3096E equivalent CA3096AE 40841 dual gate mosfet CA3096AM96 CA3096E

    CA3096

    Abstract: 40841 40841 dual gate mosfet CA3096AE CA3096E npn transistors,pnp transistors T2300B CA3096A CA3096AM CA3096AM96
    Text: CA3096, CA3096A, CA3096C S E M I C O N D U C T O R NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C CA3096 40841 40841 dual gate mosfet CA3096AE CA3096E npn transistors,pnp transistors T2300B CA3096AM CA3096AM96

    CA3096

    Abstract: transistor equivalent ca3096 40841 thyristor firing circuits 3096A CA3096E CA3096A CA3096AE 40841 MOSFET CA3096AM96
    Text: CA3096, CA3096A, CA3096C UC T T P RO D E T E ODUC L TE PR OBSO U IT T BS L E S U A3 0 9 6 HF POSSIB January 2004 NPN/PNP Transistor Arrays Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C CA3096 transistor equivalent ca3096 40841 thyristor firing circuits 3096A CA3096E CA3096AE 40841 MOSFET CA3096AM96

    an5296

    Abstract: AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 FN532 CA30
    Text: CA3146, CA3146A, CA3183, CA3183A T O DU C T TE PR E O DU C L R O P S E T OB U 3 BSTIT , CData 308Sheet LE SU 86 A POSSIB 3046, CA30 CA May 2001 FN532.6 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a


    Original     		PDF CA3146, CA3146A, CA3183, CA3183A FN532 CA3183A, CA3183 CA3146A an5296 AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 CA30

    XMFP1-M3

    Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
    Text: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••


    Original     		PDF Rating3-5698410 XMFP1-M3 D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428

    DTC123JKA

    Abstract: E42 transistor ROHM DTC123J DTC123JE DTC123JM DTC123JSA DTC123JUA SC-72 T106 transistor e42
    Text: DTC123JM / DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Transistor Digital transistors built-in resistors DTC123JM / DTC123JE / DTC123JUA DTC123JKA / DTC123JSA !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


    Original     		PDF DTC123JM DTC123JE DTC123JUA DTC123JKA DTC123JSA DTC123JUA E42 transistor ROHM DTC123J DTC123JSA SC-72 T106 transistor e42

    DTC123JKA

    Abstract: DTC123JSA DTC123JUA SC-72 T106 T146 DTC123J DTC123JE transistor e42
    Text: DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Transistor Digital transistors built-in resistors DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA !External dimensions (Units : mm) DTC123JE 1.6±0.2 1.0±0.1 (3) 0.55±0.1 0.3 −+0.1 0.05 0.15±0.05 ROHM : EMT3


    Original     		PDF DTC123JE DTC123JUA DTC123JKA DTC123JSA DTC123JE DTC123JUA DTC123JSA SC-72 T106 T146 DTC123J transistor e42

    transistor e42

    Abstract: DTC123JKA
    Text: DTC123JM / DTC123JH / DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Transistor Digital transistors built-in resistors DTC123JM / DTA123JH / DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


    Original     		PDF DTC123JM DTC123JH DTC123JE DTC123JUA DTC123JKA DTC123JSA DTA123JH transistor e42

    DTC123JKA

    Abstract: DTC123J DTC123JE DTC123JM DTC123JSA DTC123JUA SC-72 T106
    Text: DTC123JM / DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Transistor Digital transistors built-in resistors DTC123JM / DTC123JE / DTC123JUA DTC123JKA / DTC123JSA zEquivalent circuit zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


    Original     		PDF DTC123JM DTC123JE DTC123JUA DTC123JKA DTC123JSA DTC123JUA DTC123J DTC123JSA SC-72 T106

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    CA3096

    Abstract: No abstract text available
    Text: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types


    OCR Scan     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C CA3096

    BT816

    Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
    Text: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF mm/13" O-92S) BT816 TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728

    equivalent transistor TT 3034

    Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages


    OCR Scan     		PDF -335/H-135/D-40 -334/H-280/D-41 -334/H-280/D-41 -334/H-28Q/D-41 L-56SW-42/H-115 L-565/W-42/H-12 OT-23, SC-59 equivalent transistor TT 3034 transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718

    transistor b722

    Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF

    equivalent transistor TT 3034

    Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF

    B861 transistor

    Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR
    Text: R OJ N m DTA/DTB/DTC/DTD I DIGITAL TRANSISTOR APPLICATION: • j EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEA T U R ES; • R ep laces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF J/U13 B861 transistor equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR

    transistor marking code e42

    Abstract: DTC123JKA
    Text: DTC123JE DTC123JUA DTC123JKA Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm • • available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTC123JE (EMT3) I S lO .? B package marking: — DTC123JE & DTC123JKA; E42


    OCR Scan     		PDF DTC123JE DTC123JUA DTC123JKA SC-70) SC-59) DTC123JE DTC123JKA; DTC123JUA; DTC123JUA transistor marking code e42 DTC123JKA

    Solitron Transistor

    Abstract: No abstract text available
    Text: 83 68 60 2 S O L I T RO N D EV IC E S _ ~bl D 6 1C 01273 INC ENGINEERING D E VICE SPECIFICATION 7 ^ 9 - ^ ’3>-3210110 D | S3tiflbD5 DD01S73 T | 1.0 SECTION I: 1.1 Construction: Transistor (Code: 91SP311of .DEVICE D E S C R I P T I O N , This device is an NPN Diffused Planar Power Transistor


    OCR Scan     		PDF 91SP311of DD01S73 C--13 Solitron Transistor

    NE42484A

    Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    OCR Scan     		PDF NE42484A NE42484A NE42484A-SL NE42484A-T1 transistor NEC D 986 ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor