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    TRANSISTOR E2P Search Results

    TRANSISTOR E2P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR E2P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS


    Original     		PDF BFS17A September1995 MSB003 R77/02/pp9

    BFS17A

    Abstract: MSB003 E2p transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage


    Original     		PDF BFS17A September1995 MSB003 R77/02/pp9 BFS17A MSB003 E2p transistor

    BFS17A

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.


    Original     		PDF BFS17A September1995 MSB003 BFS17A MSB003

    E2p 28 transistor

    Abstract: transistor DATA REFERENCE handbook RF TRANSISTOR 2.5 GHZ s parameter E2p device marking marking code 10 sot23 marking code ce SOT23 RF NPN POWER TRANSISTOR 2.5 GHZ BFS17A MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.


    Original     		PDF BFS17A MSB003 E2p 28 transistor transistor DATA REFERENCE handbook RF TRANSISTOR 2.5 GHZ s parameter E2p device marking marking code 10 sot23 marking code ce SOT23 RF NPN POWER TRANSISTOR 2.5 GHZ BFS17A MSB003

    BFS17A

    Abstract: MSB003 E2p transistor E2p device marking Transistor E2P
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.


    Original     		PDF BFS17A MSB003 BFS17A MSB003 E2p transistor E2p device marking Transistor E2P

    NSV40300

    Abstract: P40300 free transistor and ic equivalent data NSS40300MD
    Text: NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low


    Original     		PDF NSS40300MDR2G, NSV40300MDR2G NSS40300MD/D NSV40300 P40300 free transistor and ic equivalent data NSS40300MD

    N40301

    Abstract: NSS40301MDR2G
    Text: NSS40301MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat NPN Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low


    Original     		PDF NSS40301MDR2G NSS40301MD/D N40301 NSS40301MDR2G

    NSS40300MD

    Abstract: NSS40300MDR2G
    Text: NSS40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low


    Original     		PDF NSS40300MDR2G NSS40300MD/D NSS40300MD NSS40300MDR2G

    NSS40300MD

    Abstract: No abstract text available
    Text: NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low


    Original     		PDF NSS40300MDR2G, NSV40300MDR2G NSS40300MD/D NSS40300MD

    NSS40301MDR2G

    Abstract: No abstract text available
    Text: NSS40301MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat NPN Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low


    Original     		PDF NSS40301MDR2G NSS40301MD/D NSS40301MDR2G

    NJX1675PDR2G

    Abstract: No abstract text available
    Text: NJX1675PDR2G Product Preview Complementary 30 V, 6.0 A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage


    Original     		PDF NJX1675PDR2G NJX1675P/D NJX1675PDR2G

    free transistor and ic equivalent data

    Abstract: No abstract text available
    Text: NSS30201MR6T1G, SNSS30201MR6T1G 30 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS30201MR6T1G, SNSS30201MR6T1G NSS30201MR6/D free transistor and ic equivalent data

    Untitled

    Abstract: No abstract text available
    Text: NSS35200MR6T1G, SNSS35200MR6T1G 35 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS35200MR6T1G, SNSS35200MR6T1G NSS35200MR6/D

    NSS20300MR6T1G

    Abstract: No abstract text available
    Text: NSS20300MR6T1G Product Preview 20 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS20300MR6T1G NSS20300MR6/D NSS20300MR6T1G

    transistor a750

    Abstract: No abstract text available
    Text: NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE sat Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS40302PDR2G NSS40302P/D transistor a750

    C40302

    Abstract: NSS40302PDR2G
    Text: NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE sat Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS40302PDR2G NSS40302P/D C40302 NSS40302PDR2G

    NSS40300DDR2G

    Abstract: G40300
    Text: NSS40300DDR2G Dual 40 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS40300DDR2G NSS40300D/D NSS40300DDR2G G40300

    marking VE

    Abstract: No abstract text available
    Text: NSS12100XV6T1G Product Preview 12 V, 1 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS12100XV6T1G NSS12100XV63/D marking VE

    E2p 28 transistor

    Abstract: 55C40 BFS17 BFS17A E2p device marking E2p transistor
    Text: Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic S O T23 package. APPLICATIONS • It is intended fo r RF applications such as oscillators in TV tuners. PINNING T op view PIN DESCRIPTION


    OCR Scan     		PDF BFS17 E2p 28 transistor 55C40 BFS17A E2p device marking E2p transistor

    E2p device marking

    Abstract: BFS17 BFS17A
    Text: Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic S O T23 package. APPLICATIONS • It is intended fo r RF applications such as oscillators in TV tuners. PINNING Top view PIN DESCRIPTION


    OCR Scan     		PDF BFS17 E2p device marking BFS17A

    E2p 28 transistor

    Abstract: E2p transistor transistor applications
    Text: Short-form product specification Philips Semiconductors NPN 3 GHz wideband transistor BFS17A PINNING APPLICATIONS • It is intended for a wide range of RF applications such as TV-tuners. PIN DESCRIPTION DESCRIPTION 1 base 2 emitter 3 collector NPN transistor in a plastic SOT23


    OCR Scan     		PDF BFS17A E2p 28 transistor E2p transistor transistor applications

    E2p 93 transistor

    Abstract: E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A
    Text: Philips Sem iconductors m ^ 5 3 ^ 3 1 □DE5£5c1 TTS BIAPX N AMER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION fc,7E Product specification J> ^ BFS17A PINNING NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF


    OCR Scan     		PDF BFS17A E2p 93 transistor E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A

    cq 636 g transistor

    Abstract: No abstract text available
    Text: bbsa'oi Philips Semiconductors goeses^ n s • APX N AMER PHILIPS/D ISCR ETE NPN 3 GHz wideband transistor b?E Product specification D ^ BFS17A PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.


    OCR Scan     		PDF BFS17A cq 636 g transistor

    E2p 96 transistor

    Abstract: BFS17 BFS17A MSB003
    Text: Philips Sem iconductors iH 7 1 1 Q f l2 b 0 O b '"! 2 2 5 L7b I B PH I N Product specification NPN 3 GHz wideband transistor £ BFS17A TYP. MAX. PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.


    OCR Scan     		PDF 711Dflgb BFS17A MSB003 E2p 96 transistor BFS17