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    TRANSISTOR E101 Search Results

    TRANSISTOR E101 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR E101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    e20231

    Abstract: 20231 transistor E101
    Text: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power


    Original     		PDF G-200, 1-877-GOLDMOS 1301-PTE e20231 20231 transistor E101

    E101 FET

    Abstract: transistor E101
    Text: PRELIMINARY PTF 10160* 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description • • The 10160 is an input and output matched 85 watt LDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. This device operates at 53% efficiency with 15 dB of gain minimum. Full


    Original     		PDF 1-877-GOLDMOS 1301-PTF E101 FET transistor E101

    FR10300N0200J

    Abstract: UT-085 BLF645 2861002402 deltabond 152 UT-085C-15 transistor C103 c103 TRANSISTOR AN10953 C5750X7S2A106M
    Text: AN10953 BLF645 10 MHz to 600 MHz 120 W amplifier Rev. 1 — 3 March 2011 Application note Document information Info Content Keywords BLF645, broadband Abstract The BLF645 is a 100 W, 32 V LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications from HF to 1.4 GHz. This


    Original     		PDF AN10953 BLF645 BLF645, FR10300N0200J UT-085 2861002402 deltabond 152 UT-085C-15 transistor C103 c103 TRANSISTOR AN10953 C5750X7S2A106M

    HEL01

    Abstract: transistor E101 KEL01
    Text: MC10EL01, MC100EL01 5V ECL 4-Input OR/NOR The MC10EL/100EL01 is a 4-input OR/NOR gate. The device is functionally equivalent to the E101 device with higher performance capabilities. With propagation delays and output transition times significantly faster than the E101, the EL01 is ideally suited for those


    Original     		PDF MC10EL01, MC100EL01 MC10EL/100EL01 HEL01 KEL01 AND8020 AN1404 AN1405 AN1406 AN1503 transistor E101

    10E112

    Abstract: E212 transistor E175 transistor an1404 4000 SERIES MOTOROLA DATABOOK e154 DL140 E122 10E416
    Text: AN1404 Application Note ECLinPS Circuit Performance at NonĆStandard VIH Levels Prepared by Todd Pearson ECL Applications Engineering This application note explains the consequences of driving an ECLinPS device with an input voltage HIGH level VIH which does not meet the maximum voltage


    Original     		PDF AN1404 AN1404/D* AN1404/D DL140 10E112 E212 transistor E175 transistor an1404 4000 SERIES MOTOROLA DATABOOK e154 E122 10E416

    EP01

    Abstract: MC10EP01 MC10EP01D MC10EP01DR2 semiconductor body marking
    Text: MC10EP01 4-Input OR/NOR The MC10EP01 is a 4–input OR/NOR gate. The device is functionally equivalent to the EL01 device, LVEL01, and E101 a quad version . With AC performance much faster than the LVEL01 device, the EP01 is ideal for applications requiring the fastest AC


    Original     		PDF MC10EP01 MC10EP01 LVEL01, LVEL01 230ps AND8003/D r14153 MC10EP01/D EP01 MC10EP01D MC10EP01DR2 semiconductor body marking

    E175 transistor

    Abstract: E212 transistor 10E112 4000 SERIES MOTOROLA DATABOOK e212 - e175 an1404 small signal transistor MOTOROLA DATABOOK 10E4 E142 10E416
    Text: AN1404/D ECLinPS Circuit Performance at Non-Standard VIH Levels http://onsemi.com Prepared by Todd Pearson ECL Applications Engineering APPLICATION NOTE This application note explains the consequences of driving an ECLinPS device with an input voltage HIGH level VIH which does


    Original     		PDF AN1404/D r14525 E175 transistor E212 transistor 10E112 4000 SERIES MOTOROLA DATABOOK e212 - e175 an1404 small signal transistor MOTOROLA DATABOOK 10E4 E142 10E416

    Untitled

    Abstract: No abstract text available
    Text: MC10EP101 Product Preview Quad 4-Input OR/NOR The MC10EP101 is a Quad 4–input OR/NOR gate. The device is functionally equivalent to the E101. With AC performance much faster than the E101 device, the EP101 is ideal for applications requiring the fastest AC performance available. All VCC and VEE pins


    Original     		PDF MC10EP101 MC10EP101 EP101 240ps AND8003/D r14525 MC10EP101/D

    m 1305

    Abstract: Marking D1c MC10EP101 MC10EP101FA MC10EP101FAR2 D1C marking ep101 transistor 3005 2
    Text: MC10EP101 Quad 4-Input OR/NOR The MC10EP101 is a Quad 4–input OR/NOR gate. The device is functionally equivalent to the E101. With AC performance faster than the E101 device, the EP101 is ideal for applications requiring the fastest AC performance available. All VCC and VEE pins must be


    Original     		PDF MC10EP101 MC10EP101 EP101 250ps AND8003/D r14525 MC10EP101/D m 1305 Marking D1c MC10EP101FA MC10EP101FAR2 D1C marking transistor 3005 2

    MC10EP01

    Abstract: EP01 MC100EP01 KEP01
    Text: MC10EP01, MC100EP01 3.3V / 5V ECL 4-Input OR/NOR Description The MC10EP01 is a 4−input OR/NOR gate. The device is functionally equivalent to the EL01 device, LVEL01, and E101 a quad version . With AC performance much faster than the LVEL01 device, the EP01 is ideal for applications requiring the fastest AC


    Original     		PDF MC10EP01, MC100EP01 MC10EP01 LVEL01, LVEL01 HEP01 KEP01 EP01 MC100EP01 KEP01

    KEL01

    Abstract: HEL01 MC100EL01 MC10EL01
    Text: MC10EL01, MC100EL01 5VĄECL 4ĆInput OR/NOR The MC10EL/100EL01 is a 4-input OR/NOR gate. The device is functionally equivalent to the E101 device with higher performance capabilities. With propagation delays and output transition times significantly faster than the E101, the EL01 is ideally suited for those


    Original     		PDF MC10EL01, MC100EL01 MC10EL/100EL01 AND8003/D r14525 MC10EL01/D KEL01 HEL01 MC100EL01 MC10EL01

    LQFP-32

    Abstract: MC100EP101 MC100EP101FA MC100EP101FAR2 MC10EP101 MC10EP101FA MC10EP101FAR2 MARKING CODE D3B
    Text: MC10EP101, MC100EP101 3.3V / 5V ECL Quad 4−Input OR/NOR The MC10/100EP101 is a Quad 4-input OR/NOR gate. The device is functionally equivalent to the E101. With AC performance faster than the E101 device, the EP101 is ideal for applications requiring the


    Original     		PDF MC10EP101, MC100EP101 MC10/100EP101 EP101 LQFP-32 EP101 r14525 MC10EP101/D LQFP-32 MC100EP101 MC100EP101FA MC100EP101FAR2 MC10EP101 MC10EP101FA MC10EP101FAR2 MARKING CODE D3B

    EP01

    Abstract: MC100EP01 MC10EP01 HEP01
    Text: MC10EP01, MC100EP01 3.3V / 5VĄECL 4-Input OR/NOR The MC10EP01 is a 4–input OR/NOR gate. The device is functionally equivalent to the EL01 device, LVEL01, and E101 a quad version . With AC performance much faster than the LVEL01 device, the EP01 is ideal for applications requiring the fastest AC


    Original     		PDF MC10EP01, MC100EP01 MC10EP01 LVEL01, LVEL01 HEP01 r14525 MC10EP01/D EP01 MC100EP01 HEP01

    MARKING CODE D3B

    Abstract: No abstract text available
    Text: MC10EP101, MC100EP101 3.3V / 5VĄECL Quad 4-Input OR/NOR The MC10/100EP101 is a Quad 4–input OR/NOR gate. The device is functionally equivalent to the E101. With AC performance faster than the E101 device, the EP101 is ideal for applications requiring the


    Original     		PDF MC10EP101, MC100EP101 MC10/100EP101 EP101 EP016 r14525 MC10EP101/D MARKING CODE D3B

    KEL01

    Abstract: 1005 Ic Data HEL01 IC 4050 DATA SHEET k 3555 marking 84 MC100 MC100EL01 MC10EL01
    Text: MC10EL01, MC100EL01 5V ECL 4-Input OR/NOR Description The MC10EL/100EL01 is a 4-input OR/NOR gate. The device is functionally equivalent to the E101 device with higher performance capabilities. With propagation delays and output transition times significantly faster than the E101, the EL01 is ideally suited for those


    Original     		PDF MC10EL01, MC100EL01 MC10EL/100EL01 EIA/JESD78 MC10EL01/D KEL01 1005 Ic Data HEL01 IC 4050 DATA SHEET k 3555 marking 84 MC100 MC100EL01 MC10EL01

    kel01

    Abstract: MC10EL01DG HEL01 HEL01 SOIC8
    Text: MC10EL01, MC100EL01 5V ECL 4-Input OR/NOR Description The MC10EL/100EL01 is a 4-input OR/NOR gate. The device is functionally equivalent to the E101 device with higher performance capabilities. With propagation delays and output transition times significantly faster than the E101, the EL01 is ideally suited for those


    Original     		PDF MC10EL01, MC100EL01 MC10EL/100EL01 HEL01 KEL01 MC10EL01/D MC10EL01DG HEL01 SOIC8

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HD66320T TFT Driver (64-level Gray Scale Driver for High-Quality TFT Liquid Crystal Display) HITACHI Preliminary May 1995 The HD66320T, a source driver LSI, drives an active matrix LCD panel having TFTs (thin film transistor) in the picture element (pixel) area. The LSI receives 6-bit digital display data per pixel and


    OCR Scan     		PDF HD66320T 64-level HD66320T, -------------------------------------25kQ

    hitachi lcd gate source drive

    Abstract: No abstract text available
    Text: HD66320T TFT Driver Preliminary (64-level Gray Scale Driver for High-Quality TFT Liquid Crystal Display) HITACHI May 1995 The HD66320T, a source driver LSI, drives an active matrix LCD panel having TFTs (thin film transistor) in the picture elem ent (pixel) area. The LSI receives 6-bit digital display data per pixel and outputs


    OCR Scan     		PDF HD66320T 64-level HD66320T, hitachi lcd gate source drive

    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


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    relay Re 04501

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
    Text: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997


    OCR Scan     		PDF ENGI86 4970A E1199 relay Re 04501 JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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