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    TRANSISTOR DT-110 PNP Search Results

    TRANSISTOR DT-110 PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR DT-110 PNP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EN5387

    Abstract: FX901 PNP Transistor MOSFET
    Text: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low


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    EN5387 FX901 FX901] EN5387 FX901 PNP Transistor MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low


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    EN5387 FX901 FX901] PDF

    c124 npn

    Abstract: transistor NPN C124 OPA623X2 transisTOR C124 c124 transistor C121 C124 C202 C203 C206
    Text: * OPA623X2 WIDE BANDWIDTH, CURRENT FEEDBACK, MACROMODEL, COMPLEX VERSION * * CREATED 8/92 KL * REV.B 7/9/93 BCB : CLARIFICATION OF NODE SET INSTRUCTIONS * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;


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    OPA623X2 029E-12 017E-12 050E-12 80E-12 00E-12 1567E-16 272E-3 67E-3 248E-20 c124 npn transistor NPN C124 transisTOR C124 c124 transistor C121 C124 C202 C203 C206 PDF

    OPA660

    Abstract: P-N-P CURRENT MIRROR ZENER DIODE 27c diode zener 27c AB-181 basic electronik operational transconductance amplifier 27C zener 8pin 382 229 diamond circuit
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


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    OPA660 OPA660 P-N-P CURRENT MIRROR ZENER DIODE 27c diode zener 27c AB-181 basic electronik operational transconductance amplifier 27C zener 8pin 382 229 diamond circuit PDF

    c124 npn

    Abstract: transistor NPN C124 TRANSISTOR BC 1366 c124 transistor C2099 transistor c124 C203 C204 C208 C209
    Text: * OPA622X2 WIDE-BANDWIDTH OPERATIONAL AMPLIFIER MACROMODEL COMPLEX VERSION * * CREATED 8/92 BY KL * REV.B 7/9/93 BCB : CLARIFICATION OF NODE SET INSTRUCTIONS * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;


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    OPA622X2 029E-12 017E-12 050E-12 80E-12 00E-12 1567E-16 272E-3 67E-3 248E-20 c124 npn transistor NPN C124 TRANSISTOR BC 1366 c124 transistor C2099 transistor c124 C203 C204 C208 C209 PDF

    AB-181

    Abstract: OPA660
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


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    OPA660 OPA660 AB-181 PDF

    bc557

    Abstract: OP AMP DIL8 AM417 BC557C BCW68H transistor 91 330 analog
    Text: RATIOMETRIC VOLTAGE TRANSMITTER AM417 FEATURES GENERAL DESCRIPTION • Supply Voltage 5V± ±5% Ratio Range • Wide Operating Temperature Range: –40°C.+100°C • Ratiometrical Current Source for Transducer Excitation • Instrumentation Amplifier Input


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    AM417 AM417 bc557 OP AMP DIL8 BC557C BCW68H transistor 91 330 analog PDF

    triac with snubber

    Abstract: RF transistor W2W TRIAC RCA Westinghouse SCR handbook BATTERY CHARGER SCR ZO 607 TRIAC 11Z13 TRIAC zo 607 MA AC 220v fan motor speed control triac bt136 220v dimmer light bt139
    Text: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’


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    DL137/D May-2000 r14525 DL137/D triac with snubber RF transistor W2W TRIAC RCA Westinghouse SCR handbook BATTERY CHARGER SCR ZO 607 TRIAC 11Z13 TRIAC zo 607 MA AC 220v fan motor speed control triac bt136 220v dimmer light bt139 PDF

    TRIAC zo 607 MA

    Abstract: ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760
    Text: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’


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    DL137/D May-2000 r14525 TRIAC zo 607 MA ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760 PDF

    CIRCUITS BY USING 2N6027

    Abstract: 2n6027 practical application circuits 2N6028 schematic equivalent transistor of 2n6027 2N6028 Application Note transistor put 2n6028 triac control thyristor firing circuit SCR 320 Snubber Capacitor transistor 2N6028 2N6241 equivalent
    Text: SECTION 3 THYRISTOR DRIVERS AND TRIGGERING 1.0 Edited and Updated W ≥ BASE WIDTH L ≥ DIFFUSION LENGTH Triggering a thyristor requires meeting its gate energy specifications and there are many ways of doing this. In general, the gate should be driven hard and fast to ensure


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    2SA1647

    Abstract: 2SA1647-Z d1483
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1647, 2SA1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING Unit: mm 6.5 ±0.2 5.0 ±0.2 This transistor is ideal for use in switching regulators, DC/DC


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    2SA1647, 2SA1647-Z 2SA1647 2SA1647-Z d1483 PDF

    transistor 1647

    Abstract: 2SA1647
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1647,1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 This transistor is ideal for use in switching regulators, DC/DC


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    2SA1647 1647-Z transistor 1647 PDF

    Untitled

    Abstract: No abstract text available
    Text: CPC1580 Optically Isolated Gate Drive Circuit INTEGRATED CIRCUITS DIVISION Features Description • • • • • • • The CPC1580 optical gate driver provides isolated control of a discrete power MOSFET transistor without the need of an external power supply. Control of the


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    CPC1580 CPC1580 3750Vrms DS-CPC1580-R01 PDF

    431 transistor

    Abstract: CPC1580P
    Text: CPC1580 Optically Isolated Gate Drive Circuit INTEGRATED CIRCUITS DIVISION PRELIMINARY Features Description • • • • • • • The CPC1580 optical gate driver provides isolated control of a discrete power MOSFET transistor without the need of an external power supply. Control of the


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    3750Vrms CPC1580 CPC1580 DS-CPC1580-R00H 431 transistor CPC1580P PDF

    MP4305

    Abstract: No abstract text available
    Text: MP4305 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type Darlington power transistor 4 in 1 MP4305 Industrial Applications High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Small package by full molding (SIP 12 pin)


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    MP4305 MP4305 PDF

    transistor equivalent irf510

    Abstract: 966a transistor equivalent irf740 irf460a HEXFET III - A new Generation of Power MOSFETs fet irf840 transistor equivalent irf520 IRF83Q AN949A High frequency switching AN-966A
    Text: APPLICATION NOTE 966A HEXFET III: A New Generation of Power MOSFETs H EXFET is a tra d e m a rk o f In te rn a tio n a l R ectifie r by D. Grant Introduction International Rectifier has introduc­ ed a new third-generation of HEXFET power MOSFETs, the HEXFET III.


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    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1647,1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PACKAGE DRAWINGS Unit: mm DESCRIPTION 6.5 ±0.2 voltage. 5.0 ±0.2 0.5 ±0.1 2 3 1.1 ±0.2 • Available for high-current control in small dimension


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    2SA1647 1647-Z PDF

    2SA1647

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1647,1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PACKAGE DRAWINGS Unit: mm DESCRIPTION 6.5 ±0.2 voltage. 5.0 ±0.2 0.5 ±0.1 2 3 1.1 ±0.2 • Available for high-current control in small dimension


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    2SA1647 1647-Z PDF

    67031

    Abstract: Si5711EDU-T1-GE3 Si5711EDU si5711
    Text: Si5711EDU Vishay Siliconix P-Channel 20 V D-S MOSFET and PNP Low VCE(sat) Switching Transistor FEATURES MOSFET - PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 6a 0.096 at VGS = - 2.5 V - 6a • Halogen-free According to IEC 61249-2-21


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    Si5711EDU 2002/95/EC 11-Mar-11 67031 Si5711EDU-T1-GE3 si5711 PDF

    transistor k44

    Abstract: No abstract text available
    Text: *R oH S CO M PL IA NT TISP8200HDM BUFFERED P-GATE SCR DUAL TISP8201HDM BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP820xHDM Overvoltage Protectors High Performance Protection for SLICs with +ve & -ve


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    TISP8200HDM TISP8201HDM TISP820xHDM GR-1089-CORE TSP0620 transistor k44 PDF

    transistor array K1 marking

    Abstract: bourns capacitor network transistor k44
    Text: *R oH S CO M PL IA NT TISP8200HDM BUFFERED P-GATE SCR DUAL TISP8201HDM BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP820xHDM Overvoltage Protectors High Performance Protection for SLICs with +ve & -ve


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    TISP8200HDM TISP8201HDM TISP820xHDM GR-1089-CORE IP51-781-5700 TSP0620 transistor array K1 marking bourns capacitor network transistor k44 PDF

    TISP8201HDMR-S

    Abstract: GR-1089-CORE TISP8200HDMR-S pnp npn dual emitter connected transistor k44
    Text: *R oH S CO M PL IA NT TISP8200HDM BUFFERED P-GATE SCR DUAL TISP8201HDM BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP820xHDM Overvoltage Protectors High Performance Protection for SLICs with +ve & -ve


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    TISP8200HDM TISP8201HDM TISP820xHDM Program1-41-7685510 TSP0620 TISP8201HDMR-S GR-1089-CORE TISP8200HDMR-S pnp npn dual emitter connected transistor k44 PDF

    Mj2955 power transistor using regulator

    Abstract: 48 VDC voltage regulator 369A MC78M00
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Three-Terminal Medium Current Positive Voltage Regulators The MC78M00 Series positive voltage regulators are identical to the popular MC7800 Series devices, except that they are specified for only half the output current. Like the MC7800 devices, the MC78M00 three-terminal regulators are


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    MC78M00 MC7800 MJ2955 MJ2955 Mj2955 power transistor using regulator 48 VDC voltage regulator 369A PDF

    4W0E

    Abstract: SMEW H11C4 H11C5-H11C6 VP243 GE SCR 1000 H11C5 H11C6 400v transistor the light activated scr
    Text: G E SOLID STATE 01 DE J 3ñ7SDñl DOlTOfl b | Optoelectronic Specifications " T -w -s 7 Photon Coupled Isolator H11C4 Ga As Infrared Emitting Diode & Light Activated SCR The GE Solid State H 11C4, H 11C5 and H11C6 are gallium arsenide, infrared emitting diodes coupled with light activated silicon con- j


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    3fl75DÃ H11C4 H11C5, H11C6^ H11C4, H11C5 33mW/Â 4W0E SMEW H11C4 H11C5-H11C6 VP243 GE SCR 1000 H11C6 400v transistor the light activated scr PDF