2SB1453
Abstract: NEC 2SB1453
Text: DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING UNIT: mm the IC output. This transistor is ideal for motor drivers and solenoid
|
Original
|
PDF
|
2SB1453
2SB1453
NEC 2SB1453
|
2SB1453
Abstract: NEC 2SB1453
Text: DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING UNIT: mm the IC output. This transistor is ideal for motor drivers and solenoid
|
Original
|
PDF
|
2SB1453
2SB1453
NEC 2SB1453
|
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
|
Original
|
PDF
|
|
2SD2161
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and
|
Original
|
PDF
|
2SD2161
2SD2161
O-220
O-220)
|
D1486
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and
|
Original
|
PDF
|
2SD2162
2SD2162
O-220
O-220)
D1486
|
d1541
Abstract: 2SB1669-Z 2SB1669 2SB1669-S
Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1669 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers.
|
Original
|
PDF
|
2SB1669
2SB1669
O-220AB
2SB1669-S
O-262
2SB1669-Z
O-220SMD
d1541
2SB1669-Z
2SB1669-S
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1669 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers.
|
Original
|
PDF
|
2SB1669
2SB1669
O-220AB
2SB1669-S
O-262
2SB1669-Z
O-220SMD
|
2SB1430
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1430 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1430 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is ideal for motor drivers
|
Original
|
PDF
|
2SB1430
2SB1430
|
2SC4815
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE sat and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators.
|
Original
|
PDF
|
2SC4815
2SC4815
|
2SC4813
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4813 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
|
Original
|
PDF
|
2SC4813
2SC4813
|
advantage and disadvantage of igbt
Abstract: HFBR1531Z HFBR-1522ETZ
Text: Galvanic isolation for IGBT-Driver White Paper By Michael Wappmannsberger Usually, an IGBT Insulated Gate Bipolar Transistor is described in the following way: "An IGBT is a combination of a field effect transistor and a bipolar transistor where an N-channel FET controls a bipolar transistor". Although this sentence
|
Original
|
PDF
|
AFBR-0546Z
AFBR-0548Z
HFBR-0543Z
AV02-3407EN
AFBR-1624Z/1629Z
AFBR-2624Z/2529Z
AV02-2699EN
HFBR-0500ETZ
IEC60664-1
AV02-3500EN
advantage and disadvantage of igbt
HFBR1531Z
HFBR-1522ETZ
|
2SA1845
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1845 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1845 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
|
Original
|
PDF
|
2SA1845
2SA1845
|
2SA1847
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1847 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1847 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
|
Original
|
PDF
|
2SA1847
2SA1847
|
2SA1843
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
|
Original
|
PDF
|
2SA1843
2SA1843
|
|
|
RN1110FS
Abstract: RN1111FS RN2110FS RN2111FS
Text: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.
|
Original
|
PDF
|
RN1110FS
RN1111FS
RN1110FS,
RN2110FS,
RN2111FS
RN1111FS
RN2110FS
RN2111FS
|
BD140 pnp transistor
Abstract: TRANSISTOR NPN BD140 BD136 BD140 npn TRANSISTOR PNP BD140 BD140 transistor bd138 TRANSISTOR BD140 BD138 BD140 circuits
Text: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
|
Original
|
PDF
|
BD136/138/140
BD136/BD138/BD140
BD135/BD137/
BD139.
O-126
BD136
BD138
BD140
BD140 pnp transistor
TRANSISTOR NPN BD140
BD136
BD140 npn
TRANSISTOR PNP BD140
BD140
transistor bd138
TRANSISTOR BD140
BD138
BD140 circuits
|
Untitled
Abstract: No abstract text available
Text: RN49A6FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN49A6FS Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.
|
Original
|
PDF
|
RN49A6FS
|
BD139
Abstract: BD136 of ic BD140 BD140 pnp transistor transistor bd136 BD138 BD140 of transistor BD140 OF TRANSISTOR bd138 transistor BD138
Text: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
|
Original
|
PDF
|
BD136/138/140
BD136/BD138/BD140
BD135/BD137/
BD139.
O-126
BD136
BD138
BD140
BD139
BD136
of ic BD140
BD140 pnp transistor
transistor bd136
BD138
BD140
of transistor BD140
OF TRANSISTOR bd138
transistor BD138
|
RN1112FS
Abstract: RN1113FS RN2112FS RN2113FS
Text: RN1112FS,RN1113FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1112FS, RN1113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.
|
Original
|
PDF
|
RN1112FS
RN1113FS
RN1112FS,
RN2112FS,
RN2113FS
RN1113FS
RN2112FS
RN2113FS
|
Untitled
Abstract: No abstract text available
Text: CPH5506 PNP/NPN Epitaxial Planar Silicon Transistor TENTATIVE Application • DC-DC Converters, Relay Drivers ,Lamp Drivers ,Motor Drivers. Features • Composite type with 2 transistors of PNP transistor and NPN transistor, facilitating high-density mounting.
|
Original
|
PDF
|
CPH5506
CPH5506
CPH3115
CPH3215,
CPH5506-applied
20IB1=
20IB2
750mA
991215TM2fXHD
|
Untitled
Abstract: No abstract text available
Text: RN49A6FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN49A6FS Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.
|
Original
|
PDF
|
RN49A6FS
|
RN4993FS
Abstract: No abstract text available
Text: RN4993FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4993FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.
|
Original
|
PDF
|
RN4993FS
RN4993FS
|
BC445
Abstract: BC446 TRANSISTOR C 460
Text: SILICON EPITAXIAL TRANSISTOR «TÖ3»- DESCRIPTION BC445 NPN and BC446 (PNP) are silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers._
|
OCR Scan
|
PDF
|
BC445
BC446
BC445
BC446
300mA
625mW
12mW/Â
100mA
100MHz-
TRANSISTOR C 460
|
318M
Abstract: No abstract text available
Text: SEC TENTATIVE SPECIFICATION SILICON POWER TRANSISTOR ELECTRON DEVICE 2SD1162 V443 HIGH VOLTAGE HIGH CURRENT SW ITCHING NPN SILICON TRIPLE DIFFUSED DARLINGTON TRANSISTOR Industrial Use DESCRIPTION Suitable fo r transistor ignitor and m otor driver applications.
|
OCR Scan
|
PDF
|
2SD1162
318M
|
