oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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BFG135 amplifier
Abstract: BFG135 BFG135 - BFG135 MBB300
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor
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BFG135
OT223
CGY2020G
SCA50
647021/1200/01/pp12
BFG135 amplifier
BFG135
BFG135 - BFG135
MBB300
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marking dk sot-89
Abstract: 2SC4672L-AB3-R dk SOT89 2SC4672 UM MARKING SOT89 transistor dk 50 2SC4672-AB3-R dk SOT-89 SOT-89 marking DK marking DK sot89
Text: UNISONIC TECHNOLOGIES CO., 2SC4672 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A DESCRIPTION 1 The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. FEATURES *Low saturation voltage, typically VCE (sat)=0.1V at
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2SC4672
2SC4672
OT-89
2SC4672L
2SC4672-AB3-R
2SC4672L-AB3-R
QW-R208-004
marking dk sot-89
2SC4672L-AB3-R
dk SOT89
UM MARKING SOT89
transistor dk 50
dk SOT-89
SOT-89 marking DK
marking DK sot89
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dk marking code sot-89
Abstract: dk qw transistor dk 50 dk qw TRANSISTOR marking dk sot-89 2sc4672 marking Marking Code ES SOT-89 2SC4672 dk transistor 2SC4672G
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4672 NPN SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. FEATURES *Low saturation voltage, typically VCE(SAT)=0.1V at
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2SC4672
2SC4672
2SC4672L
2SC4672G
2SC4672-x-AB3-R
2SC4672L-x-AB3-R
2SC4672G-x-AB3-R
OT-89
QW-R208-004
2SC46om
dk marking code sot-89
dk qw
transistor dk 50
dk qw TRANSISTOR
marking dk sot-89
2sc4672 marking
Marking Code ES SOT-89
dk transistor
2SC4672G
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BFG198
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a
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BFG198
OT223
MSB002
OT223.
CGY2020G
SCA50
647021/1200/01/pp12
BFG198
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BUJ103AX
Abstract: BP317 BU1706AX
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
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BUJ103AX
SCA60
135104/240/02/pp12
BUJ103AX
BP317
BU1706AX
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BP317
Abstract: BU1706AX BUJ204AX
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
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BUJ204AX
SCA60
135104/204/02/pp12
BP317
BU1706AX
BUJ204AX
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
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BUJ103A
O220AB
SCA60
135104/240/02/pp12
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BUJ204A
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
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BUJ204A
O220AB
SCA60
135104/240/02/pp12
BUJ204A
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transistor dk 50
Abstract: transistor dk transistor 2SC4672 dk transistor
Text: UTC 2SC4672 TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. 1 FEATURES *Low saturation voltage, typically VCE (sat)=0.1V at IC / IB=1A / 50mA *Excellent DC current gain characteristics
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2SC4672
2SC4672
OT-89
150products
QW-R208-004
transistor dk 50
transistor dk
transistor 2SC4672
dk transistor
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transistor dk 50
Abstract: dk transistor 2sc4672 marking dk qw 2SC4672 transistor dk sot-89 marking marking dk sot-89 marking DK dK SOT89
Text: UTC 2SC4672 TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. 1 FEATURES *Low saturation voltage, typically VCE (sat)=0.1V at IC / IB=1A / 50mA *Excellent DC current gain characteristics
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2SC4672
2SC4672
OT-89
A/50mA
100MHz
QW-R208-004
transistor dk 50
dk transistor
2sc4672 marking
dk qw
transistor dk
sot-89 marking
marking dk sot-89
marking DK
dK SOT89
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DK 53 code transistor
Abstract: transistor 4894 41633 301 marking code PNP transistor 4044 for amplification philips 23 BP317 SC70-6 specification transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET PUMZ1 Transistor complementary pair Preliminary specification File under Discrete Semiconductors, SC04 1995 Dec 07 Philips Semiconductors Preliminary specification Transistor complementary pair PUMZ1 FEATURES APPLICATIONS
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SC70-6
SCD47
113062/1100/01/pp8
DK 53 code transistor
transistor 4894
41633
301 marking code PNP transistor
4044 for amplification
philips 23
BP317
SC70-6
specification transistor
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339 marking code SMD transistor
Abstract: TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE dk MARKING CODE 03 JAPAN transistor 5- pin smd IC 358
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor Preliminary specification 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES • Power dissipation comparable to
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M3D425
PDTA114EEF
SC-89
OT490)
PDTC114EEF.
SCA60
115104/00/01/pp8
339 marking code SMD transistor
TRANSISTOR SMD MARKING CODE SP
TRANSISTOR SMD MARKING CODE dk
MARKING CODE 03
JAPAN transistor
5- pin smd IC 358
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PDTA124XE
Abstract: PDTC124
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124XE PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124XE FEATURES
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M3D173
PDTA124XE
SC-75
OT416)
PDTC124XE.
SCA55
117047/1200/01/pp8
PDTC124
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sot416 marking code 26
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JE FEATURES
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M3D173
PDTA123JE
PDTA123JE
MAM345
SC-75
OT416)
SCA55
117047/1200/01/pp8
sot416 marking code 26
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PDTC143XE
Abstract: PDTA143XE
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES
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M3D173
PDTC143XE
PDTC143XE
MAM346
SC-75
OT416)
SCA60
115104/1200/01/pp8
PDTA143XE
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TSP 817
Abstract: BUK9830-30 PHT6N03LT
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHT6N03LT TrenchMOS transistor Logic level FET Product specification Supersedes data of September 1997 File under Discrete Semiconductors, SC13a November 1997 Philips Semiconductors Product specification TrenchMOS transistor
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PHT6N03LT
SC13a
OT223
SCA56
137087/600/02/pp11
TSP 817
BUK9830-30
PHT6N03LT
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES
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M3D173
PDTC123JE
SC-75
OT416)
PDTA123JE.
MGA893
PDTC123JE
SCA56
117047/1200/01/pp8
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BC337
Abstract: BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor
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BUK107-50DS
SC13a
SCA54
137087/1200/02/pp12
BC337
BC337-10
mosfet 5130
BUK107-50DS
bc337 texas
4466 8 pin mosfet pin voltage
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PDTC123ET
Abstract: PDTA123ET
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123ET PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123ET
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M3D088
PDTA123ET
PDTC123ET.
SCA55
117047/1200/01/pp8
PDTC123ET
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MB87S
Abstract: No abstract text available
Text: • bbS3R31 0 0 2 ^ 5 b 7bS « A P X “ N AUER PHILIPS/DISCRETE b7E D NPN 8 GHz wideband transistor DKT c ^ Philips Semiconductors DESCRIPTION Product specification BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications.
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bbS3R31
BFG198
OT223
MB87S
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Philips FA 145
Abstract: BFQ17 lem HA dK SOT89
Text: DK. ^ . • P hilips Sem iconductors N A U ER LbSBTai 002505S SflS H I A P X PHILIPS/DISCRETE b 7E NPN 1 GHz wideband transistor DESCRIPTION Product specification D £ BFQ17 PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The
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002505S
BFQ17
MSB013
MBB328
MBB364
Philips FA 145
BFQ17
lem HA
dK SOT89
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BLV2347 UHF power transistor Objective specification File under Discrete Semiconductors, SC08b Philips Semiconductors 1997 Oct 14 PHILIPS Philips Semiconductors Objective specification UHF power transistor BLV2347 FEATURES PINNING - SOT468A
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BLV2347
SC08b
OT468A
SCA55
i27067/oo/oi/P
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Philips electrolytic 106 screw
Abstract: STR aluminium electrolytic capacitor
Text: DISCRETE SEMICONDUCTORS RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 Philips Semiconductors 1997 Feb 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y
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RX1214B350Y
RX1214B350Y
SCA53
127147/00/02/pp12
Philips electrolytic 106 screw
STR aluminium electrolytic capacitor
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