Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR DB Search Results

    TRANSISTOR DB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PUMF12

    Abstract: MCE153
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product data sheet 2002 Nov 07 NXP Semiconductors Product data sheet PNP general purpose transistor; NPN resistor-equipped transistor


    Original     		PDF MBD128 PUMF12 OT363 OT323 SC-70) 613514/01/pp7 PUMF12 MCE153

    PUMF11

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor Product data sheet 2002 Apr 09 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PNP general purpose transistor


    Original     		PDF MBD128 PUMF11 OT363 OT323 SC-70) 613514/01/pp7 PUMF11

    PUMF12

    Abstract: 10311 PNP TRANSISTOR SOT363
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product data sheet 2002 Nov 07 NXP Semiconductors Product data sheet PNP general purpose transistor; NPN resistor-equipped transistor


    Original     		PDF MBD128 PUMF12 OT363 OT323 SC-70) 613514/01/pp7 PUMF12 10311 PNP TRANSISTOR SOT363

    PNP TRANSISTOR SOT363

    Abstract: PUMF11
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor Product data sheet 2002 Apr 09 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PNP general purpose transistor


    Original     		PDF MBD128 PUMF11 OT363 OT323 SC-70) 613514/01/pp7 PNP TRANSISTOR SOT363 PUMF11

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD DBC2315 Preliminary DUAL TRANSISTOR DIGITAL TRANSISTOR BUILT-IN BIAS RESISTORS  DESCRIPTION * Both the DTB123Y chip and DTC115T chip in a SOT-26 package. * NPN/PNP silicon transistor(Built-in resistor type)  FEATURES


    Original     		PDF DBC2315 DTB123Y DTC115T OT-26 DBC2315G-AG6-R OT-26 QW-R222-008

    2SC5602

    Abstract: 2SC5602-T1 nec 8725 marking TW NEC 2561
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5602 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA


    Original     		PDF 2SC5602 S21e2 2SC5602-T1 2SC5602 2SC5602-T1 nec 8725 marking TW NEC 2561

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD DBC2314 DUAL TRANSISTOR DIGITAL TRANSISTOR BUILT-IN BIAS RESISTORS  DESCRIPTION * Both the DTB123Y chip and DTC114Y chip in a SOT-26 package. * NPN/PNP silicon transistor(Built-in resistor type)  FEATURES * Built-in bias resistors that implies easy ON/OFF applications.


    Original     		PDF DBC2314 DTB123Y DTC114Y OT-26 DBC2314G-AG6-R OT-26 QW-R222-007

    transistor D 2394

    Abstract: No abstract text available
    Text: Agilent AT-41411 Surface Mount Low Noise Silicon Bipolar Transistor Chip Data Sheet Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz Description The AT-41411 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor SAT


    Original     		PDF AT-41411 OT-143 5965-0276E 5989-2646EN transistor D 2394

    421-5

    Abstract: 1 307 329 082 217-2 2SC5436 43ga
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA808TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Built-in high-gain transistor fT = 9.0 GHz TYP., S21e2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz


    Original     		PDF PA808TC S21e2 2SC5436) 2SC5436 PA808TC-T1 421-5 1 307 329 082 217-2 2SC5436 43ga

    transistor j5

    Abstract: 45W AMP PH1819-45A Wireless power
    Text: Wireless Power Transistor 45 Watts 1805-1880 MHz PH1819-45A PH1819-45A Wireless Power Transistor 45 Watts, 1805 - 1880 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor rd -28 dBc Typical 3 IMD at 45 Watts PEP Common Emitter Class AB Operation


    Original     		PDF PH1819-45A PH11819-45A PH1819-4 100KHz 1805MHz 1842MHz 1880MHz transistor j5 45W AMP PH1819-45A Wireless power

    2SC5603

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA893TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • Built-in high gain transistor fT = 13.5 GHz TYP., S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz


    Original     		PDF PA893TD S21e2 2SC5603) 2SC5603 PA893TD-T3 2SC5603

    2SC5600

    Abstract: 2SC5737 IC 14558 IC 2801 UPA858TD-T3
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5737, 2SC5600) Q1: Built-in low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA858TD 2SC5737, 2SC5600) S21e2 2SC5737 2SC5600 PA858TD-T3 2SC5600 2SC5737 IC 14558 IC 2801 UPA858TD-T3

    MARKING KL

    Abstract: NE687
    Text: NPN SILICON RF TWIN TRANSISTOR PA828TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 9.0 GHz TYP., ⏐S21e⏐2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz


    Original     		PDF PA828TD S21e2 NE687) NE687 PA828TD-A PA828TD-T3 PA828TD-T3-A MARKING KL NE687

    2SC5737

    Abstract: 2SC5745
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA855TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5745) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA855TD 2SC5737, 2SC5745) S21e2 2SC5737 2SC5745 PA855TD-T3 2SC5737 2SC5745

    2SC5800

    Abstract: Transistor NEC K 3654
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA873TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz


    Original     		PDF PA873TD S21e2 2SC5800) 2SC5800 PA873TD-T3 2SC5800 Transistor NEC K 3654

    Transistor NEC K 3654

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA873TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz


    Original     		PDF PA873TD 2SC5800) 2SC5800 PA873TD-T3 PU10151EJ01V0DS Transistor NEC K 3654

    nec a1640

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA891TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz


    Original     		PDF PA891TD 2SC5600) 2SC5600 PA891TD-T3 P15538EJ1V0DS nec a1640

    2SC5436

    Abstract: 2SC5600 NEC 821
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA842TC 2SC5436, 2SC5600) S21e2 2SC5436 2SC5600 2SC5436 2SC5600 NEC 821

    2SC5676

    Abstract: 2SC5737 MARKING VT
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA859TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5676) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF PA859TD 2SC5737, 2SC5676) S21e2 2SC5737 2SC5676 PA859TD-T3 2SC5676 2SC5737 MARKING VT

    6B15

    Abstract: 554-1 2SC5800
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA895TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz


    Original     		PDF PA895TD S21e2 2SC5800) 2SC5800 PA873TD PA873TD-T3 6B15 554-1 2SC5800

    2SC3603

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3603 2SC3603

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3603 2SC3603

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC 3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3587