TRANSISTOR DATASHEET FOR MOTOROLA Search Results

TRANSISTOR DATASHEET FOR MOTOROLA Result Highlights (5)

Part	Manufacturer	Description
GCM188D70E226ME36D	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for Automotive
GRM022C71A472KE19L	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose
GRM033C81A224KE01W	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose
GRM155D70G475ME15D	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose
GRM155R61J334KE01D	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose

TRANSISTOR DATASHEET FOR MOTOROLA Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
HSOP20 Abstract: MC33186DH1 sf transistor 8A SF diode MC33186 motorola automotive transistor MC33186 application note Text: MOTOROLA MC33186 SEMICONDUCTOR TECHNICAL DATA Automotive H-Bridge Driver Datasheet SILICON MONOLITHIC INTEGRATED CIRCUIT Automotive H-Bridge Driver ¥ Operating Supply Voltage 5V to 28V ¥ Overvoltage Protection against Transients up to 40V at Vbat ¥ RDSon = 150mW for each Output Transistor at 25°C	Original	MC33186 150mW HSOP20 MC33186DH1 sf transistor 8A SF diode MC33186 motorola automotive transistor MC33186 application note	PDF
A 720 transistor Abstract: MGW12N120D Text: MOTOROLA -SEMICONDUCTOR TECHNICAL DATA Advance information DataSheet MGW12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate This high voltage Insulated Gate Bipolar Transistor IGBT is co-packaged with a	Original	MGW12N120D O-247 A 720 transistor MGW12N120D	PDF
"A 6N137" Abstract: 6N137 A6N137 a 6n137 MC7805ACK motorola opto optocoupler Iso1 6N137 opto motorola transistor 912 68HC908 Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. Application Note AN2342/D Rev. 0, 9/2002 Opto Isolation Circuits For In Circuit Debugging of 68HC9 S 12 and 68HC908 Microcontrollers by John Logan Systems Engineering Motorola, East Kilbride Introduction	Original	AN2342/D 68HC9 68HC908 "A 6N137" 6N137 A6N137 a 6n137 MC7805ACK motorola opto optocoupler Iso1 6N137 opto motorola transistor 912 68HC908	PDF
AN211A Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide	Original	AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola	PDF
2N3797 Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide	Original	AN211A/D AN211A 2N3797 MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE	PDF
MGY25N120D Abstract: No abstract text available Text: . - MOTOROLA m~EMlcoNDu~ToR TECHNICAL DATA Advanceinformation DataSheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode MGY25N120D Silicon Gate This high voltage Insulated Gate Bipolar Transistor lGB~ is co-packaged with a	Original	MGY25N120D O-264 MGY25N120D	PDF
MPF102 JFET Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory	Original	AN211A/D AN211A MPF102 JFET motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet	PDF
"A 6N137" Abstract: 6N137 A6N137 6N137 opto a 6n137 68HC908 M68HC908AZ60A circuit debugging opto isolation application note MC7805ACK Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. AN2342/D Rev. 0, 9/2002 Opto Isolation Circuits For In Circuit Debugging of 68HC9 S 12 and 68HC908 Microcontrollers by John Logan Systems Engineering Freescale, East Kilbride Introduction Motorola’s HC08 and HC12 MCUs are widely used in ac line powered	Original	AN2342/D 68HC9 68HC908 "A 6N137" 6N137 A6N137 6N137 opto a 6n137 68HC908 M68HC908AZ60A circuit debugging opto isolation application note MC7805ACK	PDF
B37872K1104K62 Abstract: B37872-K1104-K62 B37941-K0103-K60 GV60 TLE6387GV50 DO3316P-473 TLE6387GV60 AN 6387 BSP296 epcos 336 16v Text: Step-Down DC/DC Controller for external N-MOSFETs TLE 6387 G Target Datasheet Features • Input voltage range up to 60V • Fixed output voltages: 5V at version GV50 and 5.8V at version GV60 • Integrated output voltage supervision with over- and undervoltage reset only at version GV50	Original	400kHz P-DSO-14-3, B37872K1104K62 B37872-K1104-K62 B37941-K0103-K60 GV60 TLE6387GV50 DO3316P-473 TLE6387GV60 AN 6387 BSP296 epcos 336 16v	PDF
MOS Controlled Thyristor Abstract: GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract /Title AN75 4 Subect The GBTs A ew i h onucance OSated evice Autho ) Keyords Fairhild orpoation, emionuctor, Cretor () DOCI FO dfark Page- May 1992 AN-7504 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to	Original	AN-7504 MOS Controlled Thyristor GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode	PDF
applications of mos controlled thyristor Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt he BTs w gh ncce OSted vice utho eyrds terrpoon, minctor, er OCI O frk geode May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to	Original		PDF
transistor bt 808 Abstract: "General Electric SCR Manual" 6th BT thyristor 808 General Electric SCR Manual 6th edition IBJT General Electric SCR components Data Manual TA84-5 AN918 MOTOROLA Severns 7402N Text: Parallel Operation Of Insulated Gate Transistors Application Note bt raleran Of ued te antors utho eyrds ter- C IMOS rpoon, minctor, ache ergy ted, itch wer pes, wer itch - RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS	Original		PDF
IBJT Abstract: "General Electric SCR Manual" 6th 7512 low drop ic General Electric Semiconductor General Electric SCR Manual 6th edition Rudy Severns gto 5A 500V TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications D50026 Text: Parallel Operation Of Insulated Gate Transistors Application Note C IMOS RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS e FIGURE 1. N-CHANNEL IGT TRANSISTOR STEADY STATE EQUIVALENT CIRCUIT To understand the unusual behavior of its temperature coefficient, negative at low current, almost zero at normal current,	Original		PDF
Q817C Abstract: AN-IPS-01 230v 5v 2A 10W schematic 2N60 MOSFET SMPS 314 OPTO 8 PINS transistor F 22 fqpf IPS15HC motorola mosfet AN-IPS02 flyback transformer tv Text: Synchronizable Flyback Controller IPS16 Preliminary Datasheet Rev. 2 IN-PLUG series Low Cost, High Efficiency, Low Power Synchronizable Flyback Controller IPS16 PRELIMINARY DATASHEET REV2 INTRODUCTION DESCRIPTION The IN-PLUG® IPS16 has been designed for low-cost,	Original	IPS16 IPS15 1290-B Q817C AN-IPS-01 230v 5v 2A 10W schematic 2N60 MOSFET SMPS 314 OPTO 8 PINS transistor F 22 fqpf IPS15HC motorola mosfet AN-IPS02 flyback transformer tv	PDF

H11D1M Abstract: Dual opto coupler IC MOC3023-M 4N26-M MOC306 MOTOROLA Cross Reference Search H11AA4M 4N32M MOC8050M MOC223M Text: Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.	Original	MOC211, MOCC215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M MOC3081-M H11D1M Dual opto coupler IC MOC3023-M 4N26-M MOC306 MOTOROLA Cross Reference Search H11AA4M 4N32M MOC8050M MOC223M	PDF
Opto Coupler 4N36 Abstract: MOC207R1-M MOTOROLA Cross Reference Search H11D1M E90700 motorola 4N35 opto - coupler MOC206 "cross reference" Surface wave coupler 4N33 "cross reference" MOC205-M Text: Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.	Original	MOC205, E90700, MOC205-M Opto Coupler 4N36 MOC207R1-M MOTOROLA Cross Reference Search H11D1M E90700 motorola 4N35 opto - coupler MOC206 "cross reference" Surface wave coupler 4N33 "cross reference"	PDF
EE ferrite Abstract: No abstract text available Text: IN-PLUG IPS1 5 Datasheet – Rev.12 - Low cost, High Efficiency, Low Power off-line Switcher IN-PLUG® series: IPS1 5 Low Cost, High Efficiency, Low Power Enhanced Off-line Switcher – REVISION 12 INTRODUCTION DESCRIPTION The IN-PLUG® IPS15 is an enhanced off-line	Original	IPS15 IPS10. IPS10, 1290-B EE ferrite	PDF
Siliconix Handbook Abstract: General Electric SCR Manual 6th edition "General Electric SCR Manual" 6th AN918 MOTOROLA Rudy Severns TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications Severns SCR Manual paralleling mosfet Text: Parallel Operation Of Semiconductor Switches Application Note /Title AN75 3 Subect Paralel peraion Of emionuctor witch ) Autho ) Keyords Interil orpoation, emionuctor, vaanche nergy ated, witch ng ower uplie , ower witch ng June 1993 In uninterruptable power supplies demands for current handling capability to meet load current In uninterruptable power	Original		PDF
ASIC R2 Abstract: No abstract text available Text: IN-PLUG IPS15 Datasheet – Rev.12 - Low cost, High Efficiency, Low Power off-line Switcher IN-PLUG® series: IPS15 Low Cost, High Efficiency, Low Power Enhanced Off-line Switcher – REVISION 12 INTRODUCTION DESCRIPTION The IN-PLUG® IPS15 is an enhanced off-line	Original	IPS15 IPS15 IPS10. IPS10, 1290-B ASIC R2	PDF
motorola 7513 Abstract: "General Electric SCR Manual" 6th SCR Handbook, General electric General Electric SCR Manual 6th edition AN918 MOTOROLA AN918 Paralleling Power MOSFETs in Switching Applications Analog/NTP 7513 Parallel operation mosfet Severns TA84-5 Text: Parallel Operation Of Semiconductor Switches Application Note Title N93 bt raleran Of minctor itch utho eyrds terrpoon, minctor, ache ergy ted, itch wer pes, wer itch June 1993 Figure 1 . The dynamic area is only a fraction of the total waveform, but it is by far the most important when it comes	Original		PDF
MPSU10 equivalent Abstract: MPSU10 MPS-U10 CEN-U10 "Silicon Power Transistor" Text: Datasheet CEN-U10 W Q lH a U l Semiconductor Corp. NPN SILICON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-202 CASE (EBC) Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR CEN-U10 type is a NPN Silicon Power Transistor designed for high voltage	OCR Scan	CEN-U10 O-202 CEN-U10 MPSU10. 100hA 10mAf 100MHz MPSU10 equivalent MPSU10 MPS-U10 "Silicon Power Transistor"	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M TP33N10E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP33N10E T M O S E-FET™ P o w e r F ield E ffe c t T ra n s is to r Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high	OCR Scan	TP33N10E/D MTP33N10E MTP33N10E/D	PDF
2955V Abstract: TD2955V Text: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD2955V TMOS V™ Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM P-Channel Enhancement-Mode Silicon vaaie	OCR Scan	MTD2955V/D 2955V TD2955V	PDF
318J-01 Abstract: Nippon capacitors A1 GNC 318J Text: Order this document by MC33263/D MOTOROLA Advance Information U ltra Low Noise ISO mA Low Dropout Voltage Regulator w ith ON/OFF Control Housed in a SOT23-L package, the MC33263 delivers up to 150 mA where it exhibits a typical 180 mV dropout. With an incredible noise level of	OCR Scan	MC33263/D OT23-L MC33263 C33263D 318J-01 Nippon capacitors A1 GNC 318J	PDF

TRANSISTOR DATASHEET FOR MOTOROLA Search Results

TRANSISTOR DATASHEET FOR MOTOROLA Result Highlights (5)

TRANSISTOR DATASHEET FOR MOTOROLA Datasheets Context Search

HSOP20

A 720 transistor

"A 6N137"

AN211A

2N3797

MGY25N120D

MPF102 JFET

"A 6N137"

B37872K1104K62

MOS Controlled Thyristor

applications of mos controlled thyristor

transistor bt 808

IBJT

Q817C

H11D1M

Opto Coupler 4N36

EE ferrite

Siliconix Handbook

ASIC R2

motorola 7513

MPSU10 equivalent

Untitled

2955V

318J-01