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    TRANSISTOR D882 10 SP Search Results

    TRANSISTOR D882 10 SP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D882 10 SP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D882 TRANSISTOR

    Abstract: D882 TRANSISTOR D882 br d882 transistor D882 datasheet d882 npn transistor TRANSISTOR br D882 D882 datasheet d882 equivalent datasheet d882
    Text: D882 0. 5 1¡ À 0 . 03 5¡ ã 5. 50¡ 0 À. 10 TRANSISTOR NPN 2 . 30¡ À 0. 05 5. 3 0¡ À 0. 05 14. 70 D882 6. 5 0¡ À 0. 10 TO-251 TO-252-2 FEATURES 5¡ ã 5¡ ã 7. 70 0. 80¡ À 0. 0 5 0. 6 0¡ À 0. 0 5 1. Power dissipation 2. 3 0¡ À 0. 05 2. 3 0¡ À


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    O-251 O-252-2 100mA 10MHz D882 TRANSISTOR D882 TRANSISTOR D882 br d882 transistor D882 datasheet d882 npn transistor TRANSISTOR br D882 D882 datasheet d882 equivalent datasheet d882 PDF

    D882

    Abstract: D882 TRANSISTOR transistor D882 datasheet NPN D882 transistor TRANSISTOR D882 br d882 D882 -TO-92 datasheet d882 252 d882 TRANSISTOR br D882
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/252 Plastic-Encapsulate Transistors 6. 5 0¡ À 0. 10 0. 5 1¡ À 0 . 03 5¡ ã À. 10 5. 50¡ 0 TRANSISTOR NPN 2 . 30¡ À 0. 05 5. 3 0¡ À 0. 05 14. 70 D882 TO-251 TO-252-2 5¡ ã FEATURES 5¡ ã


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    O-251/252 O-251 O-252-2 100mA 10MHz D882 D882 TRANSISTOR transistor D882 datasheet NPN D882 transistor TRANSISTOR D882 br d882 D882 -TO-92 datasheet d882 252 d882 TRANSISTOR br D882 PDF

    D882

    Abstract: D882 TRANSISTOR br d882 transistor D882 datasheet TO 252 D882 datasheet d882 TRANSISTOR D882 br d882 m
    Text: Transys Electronics L I M I T E D TO-251/252 Plastic-Encapsulated Transistors 6. 5 0¡ À 0. 10 0. 5 1¡ À 0 . 03 5¡ ã À. 10 5. 50¡ 0 TRANSISTOR NPN 2 . 30¡ À 0. 05 5. 3 0¡ À 0. 05 14. 70 D882 TO-251 TO-252-2 5¡ ã FEATURES 5¡ ã 7. 70 0. 80¡ À


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    O-251/252 O-251 O-252-2 100mA 10MHz D882 D882 TRANSISTOR br d882 transistor D882 datasheet TO 252 D882 datasheet d882 TRANSISTOR D882 br d882 m PDF

    Untitled

    Abstract: No abstract text available
    Text: D882 YOUDA TRANSISTOR SI NPN TRANSISTOR—D882 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


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    PDF

    D882 TRANSISTOR

    Abstract: TRANSISTOR br D882 D882 TRANSISTOR D882 br d882 d882 npn transistor NPN D882 transistor D882* transistor NPN TRANSISTOR D882 transistor Ic 1A NPN
    Text: D882 Transistor NPN 1. BASE TO-252-2L 2. COLLECTOR 3 .EMITTER Features — Power dissipation Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage


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    O-252-2L 10MHz D882 TRANSISTOR TRANSISTOR br D882 D882 TRANSISTOR D882 br d882 d882 npn transistor NPN D882 transistor D882* transistor NPN TRANSISTOR D882 transistor Ic 1A NPN PDF

    D882 TRANSISTOR

    Abstract: transistor D882 datasheet D882 p TRANSISTOR D882 D882 D882 TRANSISTOR PIN D882 Q transistor "D882 p" d882 equivalent NPN TRANSISTOR D882
    Text: D882 YOUDA TRANSISTOR Si NPN TRANSISTOR D882 DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity PIN CONFIGURATIONS PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25 PARAMETER SYMBOL Collector-Base Voltage


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    PDF

    D882 sot

    Abstract: D882 sot89 sot 89 D882 TRANSISTOR br D882 NPN TRANSISTOR D882 TRANSISTOR D882 TRANSISTOR D882 sot-89 D882 TRANSISTOR D882 Y sot-89 d882
    Text: D882 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 Features — B 2.6 4.25 2.4 3.75 0.8 MIN Power dissipation 0.44 0.37 0.13 B MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 0.53 0.48 0.40 2x) 0.35 1.5 3.0 Dimensions in inches and (millimeters)


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    OT-89 OT-89 100mA 10MHz D882 sot D882 sot89 sot 89 D882 TRANSISTOR br D882 NPN TRANSISTOR D882 TRANSISTOR D882 TRANSISTOR D882 sot-89 D882 TRANSISTOR D882 Y sot-89 d882 PDF

    TRANSISTOR br D882

    Abstract: D882 transistor D882 br d882 d882 power transistor d882 npn transistor d882 npn D882 TRANSISTOR d882* npn transistor NPN TRANSISTOR D882
    Text: D882 NPN TO-251 Transistor TO-251 1. EMITTER 2. COLLECTOR 3.BASE 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage


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    O-251 O-251 10MHz TRANSISTOR br D882 D882 transistor D882 br d882 d882 power transistor d882 npn transistor d882 npn D882 TRANSISTOR d882* npn transistor NPN TRANSISTOR D882 PDF

    Untitled

    Abstract: No abstract text available
    Text: D882 YOUDA TRANSISTOR Si NPN TRANSISTOR—D882 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


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    PDF

    d882

    Abstract: TRANSISTOR br D882 br d882 to-126 transistor D882 d882 npn br d882 D882 TRANSISTOR TO-126 D882 d882 npn transistor d882 power transistor
    Text: D882 NPN TO-126 Transistor TO-126 2.500 1.100 2.900 1.500 7.400 7.800 1. EMITTER 3.900 4.100 3.000 2. COLLECTOR 3.200 10.60 0 11.00 0 3. BASE 3 0.000 0.300 2 Features — 1 2.100 2.300 Power dissipation 1.170 1.370 15.30 0 15.70 0 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    O-126 O-126 10MHz d882 TRANSISTOR br D882 br d882 to-126 transistor D882 d882 npn br d882 D882 TRANSISTOR TO-126 D882 d882 npn transistor d882 power transistor PDF

    D882 TRANSISTOR

    Abstract: D882 sot 89 D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 sot-89 D882 sot89 d882 power transistor transistor D882 datasheet
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT -89 Plastic-Encapsulate D882 TRANSISTOR NPN Transistors SOT-89 1. BASE FEATURES 2. COLLECTOR Power dissipation 1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


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    OT-89 100mA 10MHz D882 TRANSISTOR D882 sot 89 D882 TRANSISTOR D882 br d882 TRANSISTOR br D882 TRANSISTOR D882 sot-89 D882 sot89 d882 power transistor transistor D882 datasheet PDF

    d882 to-92

    Abstract: D882 -TO-92 D882 D882 TRANSISTOR transistor D882 D882 to 92 d882 china TRANSISTOR br D882 Br d882 NPN TRANSISTOR D882
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn D882 TRANSISTOR NPN TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


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    100mA 10MHz d882 to-92 D882 -TO-92 D882 D882 TRANSISTOR transistor D882 D882 to 92 d882 china TRANSISTOR br D882 Br d882 NPN TRANSISTOR D882 PDF

    D882 TRANSISTOR PIN

    Abstract: D882 SPECIFICATION transistor "D882 p" D882 J D882 D882 TRANSISTOR h D882 D882 tp C848I3-H transistor D882 datasheet
    Text: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882I3 BVCEO IC RCESAT Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 1/6 30V 3A 125mΩ typ. Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A


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    BTD882I3 C848I3-H BTB772I3 O-251 Pw350s UL94V-0 D882 TRANSISTOR PIN D882 SPECIFICATION transistor "D882 p" D882 J D882 D882 TRANSISTOR h D882 D882 tp C848I3-H transistor D882 datasheet PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT -89 Plastic-Encapsulate D882 Transistors SOT-89 TRANSISTOR( NPN ) 1. BASE FEATURES Power dissipation PCM : 0.75 2. COLLECTOR 1 2 W(Tamb=25℃) 3. EMITTER 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted


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    OT-89 100mA 10MHz PDF

    D882 TRANSISTOR PIN

    Abstract: D882 SPECIFICATION D882 TRANSISTOR TO 252 D882 D882 252 d882 J D882 d882 to252 transistor "D882 p" d882 power transistor
    Text: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882J3 BVCEO IC RCESAT Spec. No. : C848J3-H Issued Date : 2003.04.02 Revised Date :2009.02.04 Page No. : 1/7 30V 3A 125mΩ typ. Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A


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    BTD882J3 C848J3-H BTB772J3 O-252 Pw350us UL94V-0 D882 TRANSISTOR PIN D882 SPECIFICATION D882 TRANSISTOR TO 252 D882 D882 252 d882 J D882 d882 to252 transistor "D882 p" d882 power transistor PDF

    TRANSISTOR D882 input

    Abstract: D882 D882 TRANSISTOR sot 89 D882 N E C D882 D882 P D882 sot transistor marking D882 h D882 transistor D882 datasheet
    Text: D882 SOT-89 Plastic-Encapsulate Transistors Transistor NPN FEATURES D Power dissipation A 4 o µ¥Î» £ºmm P CM :1.25 W (Tamb=25 C) E HE •û ºÅ Collector current Marking V (BR)CBO :40 V 3 b1 2 C 1.BASE min ·û ºÅ 1.5 3 0.65 e1 0.65 HE 1.6 max 4.25


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    OT-89 OT-89 TRANSISTOR D882 input D882 D882 TRANSISTOR sot 89 D882 N E C D882 D882 P D882 sot transistor marking D882 h D882 transistor D882 datasheet PDF

    sot 89 D882

    Abstract: h D882 transistor D882 TRANSISTOR D882 sot-89 sot-89 d882 d882 092 transistor D882 p
    Text: WILLAS FM120-M+ D882 SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V THRU FM1200-M Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


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    OT-89 OD-123+ FM120-M+ FM1200-M OD-123H 060TYP 118TYP FM120-MH FM130-MH FM140-MH sot 89 D882 h D882 transistor D882 TRANSISTOR D882 sot-89 sot-89 d882 d882 092 transistor D882 p PDF

    D882 TRANSISTOR PIN

    Abstract: D882 q D882 TRANSISTOR D882 TRANSISTOR D882 D882 SPECIFICATION h D882 D882 p J D882 transistor D882 datasheet
    Text: CYStech Electronics Corp. Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882T3/S Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics


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    C848T3-H BTD882T3/S BTB772T3/S BTD882T3 O-126 UL94V-0 D882 TRANSISTOR PIN D882 q D882 TRANSISTOR D882 TRANSISTOR D882 D882 SPECIFICATION h D882 D882 p J D882 transistor D882 datasheet PDF

    D882 q

    Abstract: D882 TRANSISTOR PIN h D882 TRANSISTOR b 772 p D882 TRANSISTOR D882 D882 TRANSISTOR transistor D882 datasheet d882 equivalent J D882
    Text: CYStech Electronics Corp. Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2005.11.22 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882T3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics


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    C848T3-H BTD882T3 BTB772T3 O-126 -55is UL94V-0 D882 q D882 TRANSISTOR PIN h D882 TRANSISTOR b 772 p D882 TRANSISTOR D882 D882 TRANSISTOR transistor D882 datasheet d882 equivalent J D882 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1. EMITTER PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage V V(BR)CBO: 40


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    O-126 O-126 100mA 10MHz PDF

    TRANSISTOR D882

    Abstract: transistor D882 datasheet D882 SPECIFICATION D882 TRANSISTOR PIN D882 d882 npn transistor h D882 D882 TRANSISTOR d882 equivalent marking d882
    Text: CYStech Electronics Corp. Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics


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    C848D3-H BTD882D3 200mA BTB772D3 O-126ML UL94V-0 TRANSISTOR D882 transistor D882 datasheet D882 SPECIFICATION D882 TRANSISTOR PIN D882 d882 npn transistor h D882 D882 TRANSISTOR d882 equivalent marking d882 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors D882 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 3 A ICM: Collector-base voltage


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    OT-89 OT-89 100mA 10MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TRANSISTOR NPN TO-251 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage


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    O-251 O-251 10MHz PDF

    TRANSISTOR D882

    Abstract: D882 D882 TRANSISTOR br d882 TRANSISTOR br D882 transistor D882 datasheet d882 power transistor datasheet d882 1a60 d882 npn transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TO-251 TRANSISTOR NPN FEATURES 1. EMITTER Power dissipation 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


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    O-251 O-251 10MHz TRANSISTOR D882 D882 D882 TRANSISTOR br d882 TRANSISTOR br D882 transistor D882 datasheet d882 power transistor datasheet d882 1a60 d882 npn transistor PDF