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    TRANSISTOR D2525 Search Results

    TRANSISTOR D2525 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

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    TRANSISTOR D2525

    Abstract: 2sd2525 2SB1640 D2525
    Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640


    Original     		2SD2525 2SB1640 TRANSISTOR D2525 2sd2525 2SB1640 D2525 PDF

    TRANSISTOR D2525

    Abstract: D2525 2SB1640 2SD2525
    Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640


    Original     		2SD2525 2SB1640 TRANSISTOR D2525 D2525 2SB1640 2SD2525 PDF

    TRANSISTOR D2525

    Abstract: D2525 2SD2525 2SB1640
    Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications • Unit: mm High DC current gain: 100 min · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) · Complementary to 2SB1640


    Original     		2SD2525 2SB1640 TRANSISTOR D2525 D2525 2SD2525 2SB1640 PDF

    TRANSISTOR D2525

    Abstract: d2525 2sd2525 2SB1640
    Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications • Unit: mm High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640


    Original     		2SD2525 2SB1640 TRANSISTOR D2525 d2525 2sd2525 2SB1640 PDF

    TRANSISTOR D2525

    Abstract: 2sd2525
    Text: 2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 min • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640


    Original     		2SD2525 2SB1640 2-10T1A TRANSISTOR D2525 2sd2525 PDF