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    TRANSISTOR D2271 Search Results

    TRANSISTOR D2271 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D2271 Datasheets Context Search

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    D2271

    Abstract: transistor d2271 2SD2271
    Text: 2SD2271 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2271 Motor Drive Applications High-Current Switching Applications Unit: mm • High DC current gain: hFE = 500 (min) (VCE = 2 V, IC = 5 A) • High breakdown voltage: VCEO (SUS) = 200 V (min)


    Original     		PDF 2SD2271 D2271 transistor d2271 2SD2271

    Untitled

    Abstract: No abstract text available
    Text: 2SD2271 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2271 Motor Drive Applications High-Current Switching Applications Unit: mm • High DC current gain: hFE = 500 (min) (VCE = 2 V, IC = 5 A) • High breakdown voltage: VCEO (SUS) = 200 V (min)


    Original     		PDF 2SD2271

    D2271

    Abstract: transistor d2271
    Text: 2SD2271 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2271 Motor Drive Applications High-Current Switching Applications Unit: mm • High DC current gain: hFE = 500 (min) (VCE = 2 V, IC = 5 A) • High breakdown voltage: VCEO (SUS) = 200 V (min)


    Original     		PDF 2SD2271 2-10R1A D2271 transistor d2271

    transistor d2271

    Abstract: D2271 AN5296 Application note CA3018 CA3018A CA3018
    Text: HARRIS bl E SEfllCOND S E C T O R D 43DE271 CA3018 ffl H A R R IS W □□Mb'ìflS 427 • H AS S E M I C O N D U C T O R General Purpose Transistor Arrays M arch 1993 Features Description • Matched Monolithic General Purpose Transistors T h e C A 3 0 1 8 a n d C A 3 0 1 8 A c o n s is t o f fo u r g e n e ra l p u rp o s e


    OCR Scan     		PDF 43DE271 CA3018 CA3018 CA3018A CA3018, CA3018A transistor d2271 D2271 AN5296 Application note CA3018

    Untitled

    Abstract: No abstract text available
    Text: 3 H F A 1 1 4 5 / 8 8 3 High Speed, Low Power, Current Feedback Video Operational Amplifier with Output Disable june1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.


    OCR Scan     		PDF e1994 MIL-STD883 HFA1145/883 483pm HFA1145/883

    Untitled

    Abstract: No abstract text available
    Text: ff! H A R R 82C237 IS S E M I C O N D U C T O R CMOS High Performance Programmable DMA Controller August 1996 Features Description • Fully Compatible with Harris 82C37A The 82C237 is a modified version of the 82C37A. The 82C237 is fully software and pin for pin compatible with the


    OCR Scan     		PDF 82C237 82C37A 82C237 82C37A. 82C37A 16-bit