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    TRANSISTOR D2131 Search Results

    TRANSISTOR D2131 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

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    D2131

    Abstract: transistor d2131 2SD2131
    Text: 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		2SD2131 D2131 transistor d2131 2SD2131 PDF

    D2131

    Abstract: transistor d2131 2SD2131
    Text: 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		2SD2131 D2131 transistor d2131 2SD2131 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		2SD2131 PDF

    D2131

    Abstract: transistor d2131
    Text: 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		2SD2131 D2131 transistor d2131 PDF

    d1711

    Abstract: TRANSISTOR d3000 D2000 transistor d1541 transistor D2222 transistor D1411 D1541 transistor D1521 transistor D1521 transistor d1711
    Text: D-1000 SERIES D-1000/D-2000/D-3000/D-4000 RS-232/RS-485-Compatible & Programmable Signal Conditioning Modules Introduction The D-1000 Series family of signal conditioning modules consists of the D-1000/2000 input modules and the D-3000/4000 output modules.


    OCR Scan     		D-1000 D-1000/D-2000/D-3000/D-4000 RS-232/RS-485-Compatible D-1000/2000 D-3000/4000 RS-232 RS-485 Output/RS-232C d1711 TRANSISTOR d3000 D2000 transistor d1541 transistor D2222 transistor D1411 D1541 transistor D1521 transistor D1521 transistor d1711 PDF