TRANSISTOR D2118 Search Results

TRANSISTOR D2118 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR D2118 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor d2118 Abstract: IB1011S190 d2118 D2118 transistor Text: Part Number: Integra IB1011S190 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011S190 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under 10µs, 1%, at VCC = 60V, this	Original	IB1011S190 IB1011S190 IB1011S190-REV-NC-DS-REV-D transistor d2118 d2118 D2118 transistor	PDF
transistor d2118 Abstract: No abstract text available Text: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2118*Q , where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • 2SD2118F5 (CPT F5) 6.5 ± 0.2 2.3	OCR Scan	2SD2118F5 SC-63) D2118 transistor d2118	PDF
transistor d2118 Abstract: D2118 D2118 transistor Text: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D2118-*Q, where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • low collector saturation voltage, typically VCE(sat) = 0.3 V for	OCR Scan	2SD2118F5 SC-63) D2118- 2SD2118F5 transistor d2118 D2118 D2118 transistor	PDF
D2118 Abstract: transistor d2118 BTB1412J3 d2118 transistor Pw380us BTD2118J3 D21-1-8 Text: Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 1/4 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2118J3 Features • Low VCE sat , VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A • Excellent current gain characteristics	Original	C847J3 BTD2118J3 BTB1412J3 O-252 UL94V-0 D2118 transistor d2118 BTB1412J3 d2118 transistor Pw380us BTD2118J3 D21-1-8	PDF
transistor cross reference Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466 Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC	OCR Scan		PDF
transistor C3866 Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246 Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)	Original		PDF