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    TRANSISTOR D165 Search Results

    TRANSISTOR D165 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D165 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d1658

    Abstract: transistor D1658 2SD1658
    Text: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1658 d1658 transistor D1658 2SD1658

    2SK3714

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3714 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3714 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3714 Isolated TO-220


    Original     		PDF 2SK3714 2SK3714 O-220 O-220) 16ems,

    transistor D1658

    Abstract: d1658
    Text: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1658 20070701-JA transistor D1658 d1658

    transistor D1658

    Abstract: d1658 2SD1658
    Text: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1658 transistor D1658 d1658 2SD1658

    d1658

    Abstract: transistor D1658
    Text: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1658 d1658 transistor D1658

    NP84N03KUF

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N03KUF SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP84N03KUF is N-channel MOS Field Effect PART NUMBER PACKAGE NP84N03KUF TO-263 MP-25ZK Transistor designed for high current applications.


    Original     		PDF NP84N03KUF NP84N03KUF O-263 MP-25ZK) O-263)

    transistor D1658

    Abstract: d1658 2SD1658
    Text: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1658 transistor D1658 d1658 2SD1658

    Untitled

    Abstract: No abstract text available
    Text: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1658

    transistor D1658

    Abstract: 2SD1658 D1658
    Text: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1658 transistor D1658 2SD1658 D1658

    2SK3716

    Abstract: 2SK3716-Z D1653
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3716 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3716 is N-channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications. 2SK3716 2SK3716-Z PACKAGE TO-251 MP-3


    Original     		PDF 2SK3716 2SK3716 2SK3716-Z O-251 O-252 O-251) 2SK3716-Z D1653

    d1658

    Abstract: 2SK3713 2SK3713-SK MP-25
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3713 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3713-SK TO-262 designed for high voltage and high speed switching


    Original     		PDF 2SK3713 2SK3713-SK 2SK3713 O-262 d1658 2SK3713-SK MP-25

    2SK3716

    Abstract: 2SK3716-Z D1653
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3716 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3716 is N-channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications. 2SK3716 2SK3716-Z PACKAGE TO-251 MP-3


    Original     		PDF 2SK3716 2SK3716 2SK3716-Z O-251 O-252 O-251) 2SK3716-Z D1653

    2SK3716

    Abstract: 2SK3716-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3716 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor PART NUMBER 2SK3716 designed for high current switching applications. 2SK3716-Z PACKAGE TO-251 MP-3


    Original     		PDF 2SK3716 2SK3716 2SK3716-Z O-251 O-252 O-251) 60ems, 2SK3716-Z

    2SK3664

    Abstract: SC-75
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3664 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3664 is a switching device, which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent


    Original     		PDF 2SK3664 2SK3664 SC-75

    MARKING H1

    Abstract: 2SJ648 SC-75
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ648 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SJ648 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ648 features a low on-state resistance and excellent


    Original     		PDF 2SJ648 2SJ648 MARKING H1 SC-75

    marking .H22

    Abstract: 2SJ647 transistor NEC 2500
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ647 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm PACKAGE 2SJ647 SC-70 (SSP) Drain to Source Voltage (VGS = 0 V) VDSS −20 V Gate to Source Voltage (VDS = 0 V) VGSS m12 V ID(DC) m0.4


    Original     		PDF 2SJ647 2SJ647 marking .H22 transistor NEC 2500

    D1659

    Abstract: 2SJ648 SC-75
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ648 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SJ648 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ648 features a low on-state resistance and excellent


    Original     		PDF 2SJ648 2SJ648 D1659 SC-75

    d1652

    Abstract: 2SK3663
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3663 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK3663 is a switching device which can be driven directly by a 2.5 V power source. The 2SK3663 features a low on-state resistance and excellent


    Original     		PDF 2SK3663 2SK3663 SC-70 d1652

    NP82N03KDF

    Abstract: 41A28
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N03KDF SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP82N03KDF is N-channel MOS Field Effect Transistors designed for high current switching application. PART NUMBER PACKAGE NP82N03KDF TO-263 MP-25ZK


    Original     		PDF NP82N03KDF NP82N03KDF O-263 MP-25ZK) O-263) 41A28

    2SK3668

    Abstract: 2SK3668-ZK
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3668 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3668 is N-channel DMOS FET device that features a low on-state resistance, low charge and excellent switching characteristics, designed for high


    Original     		PDF 2SK3668 2SK3668 2SK3668-ZK O-263 MP-25ZK) O-263) 2SK3668-ZK

    2SK3664

    Abstract: SC-75
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3664 N チャネル MOS FET スイッチング用 2SK3664 は，2.5 V 電源系による直接駆動が可能なスイッ チング素子です。 外形図（単位：mm）


    Original     		PDF 2SK3664 SC-75 D16599JJ2V0DS M8E02 2SK3664 SC-75

    marking .H22

    Abstract: 2SJ647
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SJ647 P チャネル パワーMOS FET スイッチング用 外形図（単位: mm） 2SJ647 は，2.5 V 電源系による直接駆動が可能なスイッチング素子


    Original     		PDF 2SJ647 2SJ647 SC-70 D16530JJ1V0DS M8E02 marking .H22

    2SK3663

    Abstract: No abstract text available
    Text: データ・シート データ・シート MOS 形電界効果トランジスタ 形電界効果トランジスタ MOS Field Effect Transistor 2SK3663 N チャネル MOS FET スイッチング用 2SK3663 は，2.5 V 電源系による直接駆動が可能なス


    Original     		PDF 2SK3663 2SK3663 SC-70 D16529JJ1V0DS00 2SK366V D16529JJ1V0DS M8E02

    2SJ648

    Abstract: SC-75
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SJ648 P チャネル パワーMOS FET スイッチング用 2SJ648 は，2.5 V 電源系による直接駆動が可能なスイッチング素子 外形図（単位: mm）


    Original     		PDF 2SJ648 2SJ648 SC-75 -55tance D16597JJ2V0DS SC-75