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    TRANSISTOR D162 Search Results

    TRANSISTOR D162 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D162 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1843

    Abstract: diode dumper
    Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to


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    PDF 2SD1843 2SD1843 diode dumper

    D1629

    Abstract: 2SK3653
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK3653 is suitable for converter of ECM. +0.1 0.3 ±0.05 0.13 –0.05 FEATURES


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    PDF 2SK3653 2SK3653 D1629

    2SK3659

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3659 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3659 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3659


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    PDF 2SK3659 2SK3659 O-220 O-220

    2SK3571

    Abstract: 2SK3571-Z 2SK3571-ZK MP-25 MP-25Z 2SK3571-S
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3571 SWITCHING N-CHANNEL POWER MOS FET ★ DESCRIPTION ORDERING INFORMATION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, PART NUMBER PACKAGE


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    PDF 2SK3571 2SK3571 O-220AB 2SK3571-S O-262 2SK3571-ZK O-263 O-220SMD 2SK3571-Z 2SK3571-Z 2SK3571-ZK MP-25 MP-25Z 2SK3571-S

    2sk3570

    Abstract: 2SK3570-ZK D16256EJ2V0DS00 2SK3570-S 2SK3570-Z MP-25 MP-25Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3570 SWITCHING N-CHANNEL POWER MOS FET ★ DESCRIPTION ORDERING INFORMATION The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, PART NUMBER PACKAGE


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    PDF 2SK3570 2SK3570 O-220AB 2SK3570-S O-262 2SK3570-ZK O-263 O-220SMD 2SK3570-Z 2SK3570-ZK D16256EJ2V0DS00 2SK3570-S 2SK3570-Z MP-25 MP-25Z

    2SK3573

    Abstract: 2SK3573-S 2SK3573-Z 2SK3573-ZK MP-25 MP-25Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3573 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics,


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    PDF 2SK3573 2SK3573 O-220AB 2SK3573-S O-262 2SK3573-ZK O-263 2SK3573-Z O-220SMD 2SK3573-S 2SK3573-Z 2SK3573-ZK MP-25 MP-25Z

    2SK3572-Z

    Abstract: ISS 99 diode 2SK3572 D1625 2SK3572-S 2SK3572-ZK MP-25 MP-25Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3572 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics,


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    PDF 2SK3572 2SK3572 O-220AB 2SK3572-S O-262 2SK3572-ZK O-263 2SK3572-Z O-220SMD 2SK3572-Z ISS 99 diode D1625 2SK3572-S 2SK3572-ZK MP-25 MP-25Z

    2SK3574

    Abstract: 2SK3574-S 2SK3574-Z 2SK3574-ZK MP-25 MP-25Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3574 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3574 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current


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    PDF 2SK3574 2SK3574 O-220AB 2SK3574-S O-262 2SK3574-ZK O-263 2SK3574-Z O-220SMDNote 2SK3574-S 2SK3574-Z 2SK3574-ZK MP-25 MP-25Z

    2SK3575

    Abstract: 2SK3575-S 2SK3575-Z 2SK3575-ZK MP-25 MP-25Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3575 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3575 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current


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    PDF 2SK3575 2SK3575 O-220AB 2SK3575-S O-262 2SK3575-ZK O-263 2SK3575-Z O-220SMDNote 2SK3575-S 2SK3575-Z 2SK3575-ZK MP-25 MP-25Z

    2SK3574-ZK

    Abstract: 2SK3574 2SK3574-S 2SK3574-Z MP-25 MP-25Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3574 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3574 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current


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    PDF 2SK3574 2SK3574 O-220AB 2SK3574-S O-262 2SK3574-ZK O-263 2SK3574-Z O-220SMDNote 2SK3574-ZK 2SK3574-S 2SK3574-Z MP-25 MP-25Z

    2SK3575

    Abstract: 2SK3575-S 2SK3575-Z 2SK3575-ZK MP-25 MP-25Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3575 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3575 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current


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    PDF 2SK3575 2SK3575 O-220AB 2SK3575-S O-262 2SK3575-ZK O-263 2SK3575-Z O-220SMDNote 2SK3575-S 2SK3575-Z 2SK3575-ZK MP-25 MP-25Z

    FX3U-48M

    Abstract: FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M
    Text: MITSUBISHI ELECTRIC MELSEC FX Series Programmable Logic Controllers User's Manual Hardware FX3U Base Units and Extension Blocks Art. no: 168590 01062007 Version E MITSUBISHI ELECTRIC INDUSTRIAL AUTOMATION Safety Precautions (Read these precautions before use.)


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    PDF D-40880 168590-E FX3U-48M FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    2SD1843

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    Untitled

    Abstract: No abstract text available
    Text: LCIC-1106A Load-Cells Interface Card For PC/AT or Compatibles OMEGA CARE SM A/IN DI/O IBM PC Model LCIC-1106A $ 849 LCIC-1106A shown with optional LCIC-1107 I/O module. ߜ Compatible with all load cells and other strain gage based transducers ߜ Replaces all


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    PDF LCIC-1106A LCIC-1106A LCIC-1107 RS232 LCIC-1107

    D1629

    Abstract: 2SK3653
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    1485T-P2T5-T5

    Abstract: APP-24 DVN18 dcn1-1p DRS1-T km 1667 JW-10CM Camera AF actuator D325M JW-D162SH
    Text: Version 1.1 Produced in Oct. 2005 Sharp Programmable Controller NEW Satellite JW50H/70H/100H Model name DeviceNet Master Module User’s Manual JW-50DN2 Thank you for purchasing this DeviceNet master module, the JW-50DN2 for use with the JW50H/70H/ 100H programmable controller.


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    PDF JW50H/70H/100H JW-50DN2 JW-50DN2 JW50H/70H/ JW-50DN2. App-38 1485T-P2T5-T5 APP-24 DVN18 dcn1-1p DRS1-T km 1667 JW-10CM Camera AF actuator D325M JW-D162SH

    2SK3659

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SAfjYO New Products Of New Package 5/6-pi n XP Ser ies :FX type 2 SANYO new 5/6-pin XP packages are intermediate sized devices between SANYO PCP and TP packages and have high power capability. This packages line includes complex types of large-current switching transistors, of a low saturation-voltage transistor (fast


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    PDF B1302 SB20W03P D1628 FX90KTR i11er MT970331TR

    transistor C3467

    Abstract: A1370 transistor C3467 A1728 c3467 transistor SFCPA B1123 transistor A1370
    Text: SAHYO NEW PRODUCT PCP4/5 series FP series High performance composite type devices suitable for surface mounting which make the sets smaller andlighter. In these times the advantage of new products is to make sets smaller and lighter . Thus, the main market need is that discrete devices are "high performance" as well as being able to realize lighter, thinner,


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    PDF 30-50Z mounting213 FP214 FP401 2SK2167X2) 2SB1121X2 2SD1621X2 2SB1123X2 2SD1623X2 2SB1397X2 transistor C3467 A1370 transistor C3467 A1728 c3467 transistor SFCPA B1123 transistor A1370

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
    Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .


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    PDF

    B1396

    Abstract: transistor s72
    Text: SA/Im PCP4/5 series :FPseries 2 High performance composite type devices suitable for surface mounting which make the sets smaller and lighter. note:Uarking is the figures of Type No. Si ¡When mounted on ceramic board( 2 5 0 m m 1X 0 . 8 mm ) (1 uni t) a te D C — D O c o n v e r t o r s ( T R t S B D )


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    PDF FP101 FP102 FP103 FP104 FP105 FP106 FP107 FP108 2SK2167X2 FP402 B1396 transistor s72

    transistor s72

    Abstract: B1123 B1396 di621 sanyo CG B1121 FP101 FP102 FP103 FP104
    Text: SA/Im PCP4/5 series :FPseries 2 High performance composite type devices suitable for surface mounting which make the sets smaller and lighter. note:Uarking is the figures of Type No. Si ¡When mounted on ceramic board( 2 5 0 m m 1X 0 . 8 mm ) (1 uni t) a te D C — D O c o n v e r t o r s ( T R t S B D )


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    PDF FP101 FP102 FP103 FP104 FP105 FP106 FP107 FP108 2SK2151X2 FP403 transistor s72 B1123 B1396 di621 sanyo CG B1121