2SC4550
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
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2SC4550
2SC4550
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NEC 2sc4552
Abstract: 2SC4552
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
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2SC4552
2SC4552
NEC 2sc4552
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2SC4551
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
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2SC4551
2SC4551
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2SC4351
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4351 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SC4351 is a high-speed Darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for
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2SC4351
2SC4351
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2SA1845
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1845 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1845 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
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2SA1845
2SA1845
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2SA1847
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1847 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1847 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
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2SA1847
2SA1847
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2SA1841
Abstract: darlington transistor for audio power application
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1841 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SA1841 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment.
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2SA1841
2SA1841
darlington transistor for audio power application
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D1558
Abstract: 2SA1840
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1840 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SA1840 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment.
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2SA1840
2SA1840
D1558
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2SA1843
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
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2SA1843
2SA1843
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2SA1841
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1841 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ★ DESCRIPTION ORDERING INFORMATION The 2SA1841 is a high-speed Darlington power transistor. PART NUMBER PACKAGE 2SA1841 MP-10
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2SA1841
2SA1841
MP-10
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2SC4553
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a
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2SC4553
2SC4553
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2SA1645
Abstract: 2SA1645-Z
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1645, 2SA1645-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm speed switching and features a very low collector-to-emitter
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2SA1645,
2SA1645-Z
2SA1645
2SA1645-Z
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D1558
Abstract: 2SA1649 2SA1649-Z
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1649, 2SA1649-Z PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1649 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm speed switching and features a very low collector-to-emitter
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2SA1649,
2SA1649-Z
2SA1649
D1558
2SA1649-Z
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D1558
Abstract: 2sa164 2SA1649
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1649,1649-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING <R> DESCRIPTION PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 voltage. 5.0 ±0.2 2 3 13.7 MIN. FEATURES 1 5.5 ±0.2 power supply devices, as well as for high-current switching.
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2SA1649
1649-Z
D1558
2sa164
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
Q62702-F1298
OT-23
D155144
flE35fc
D12514S
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Switching Transistor SXT 3904 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings
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Q68000-A8396
OT-89
5235bQ5
G122b23
fl53Sb05
E35Li05
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2SA1845
Abstract: i301
Text: ~ r— $ y • — h / \ “7 - h - ÿ > v X ^ Silicon Power Transistor 2SA1845 P N P it 2SA1845&, £ / \ ° 7 - h 7 > v * $ ?16VcE sat ?‘h F E tf^ < 7 )T 'D C /D C = l > M L T S J iT 'f o «p « O 7 V 7 J 1 / 7 - t° > ^7 'i± t ïT ' é t A H ^ ^ ñ J ^ É o
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2SA1845
2SA1845&
2SA1845
i301
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2SC4553
Abstract: transistor t 2190 TD-7637
Text: x — £ • y — h v U = i > / \ ° 7 - Silicon Power Transistor 2SC4553 N P N X t f ^ ^ v 7 7; U v U = I > h 7 > ÿ x ^ Ü 5lJ f X 2SC4553 là, ^ W ? S'° 7 £ - hÿ > ÌS x ? T\ ± 't fz hFE # < 4*1 Xi T O : mm) x ^ 'y f- > ^ £ lÈ Îl^ T'Itx. £ -to
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2SC4553
2SC4553
transistor t 2190
TD-7637
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TC-7808
Abstract: ic 7808 D1558 NEC 7808 7808 ct 2190 ctv mtu 1622 A15E 2SA1840 uc 3212
Text: 7" $ • y — h> > h > / \ ° 7 - Darlington Power Transistor 2SA1840 U> h y ^0? - h 5 > y X n t o OA, FA 2SA1840 i, £ fc , V ^ f — t l >• 7 'j y S -y y - 9 , l | 3 X t ' ^ -T o ft $ 0 7 y T ^ f -b ° > ? "tt# T ' g tL o f f t J jg f g li S '^ y o C
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2SA1840
TC-7808
ic 7808
D1558
NEC 7808
7808 ct
2190 ctv
mtu 1622
A15E
2SA1840
uc 3212
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2SC4552
Abstract: No abstract text available
Text: y ’ — • y — h - 1 > y U / \ ° 7 - Silicon Power Transistor 2SC4552 2SC 4552 i, isîÜ X 'f h 9 •/ y X ^ t'L o w VcE<sat T'hFE ^ ^ T ' ' D C / D C f-iX -^ c o L T A IÜ T -to ( M Ù l •’ mm) > n 10.0 + 0 .3 4.5 + 0.2 2.7 + 0.2 # m O hFE <( Î Ê VCE(sat) X ' " Ÿ o
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2SC4552
2SC4552
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D1559
Abstract: 2SC4351 m027 TD-7509
Text: — y 3 1 • y — b # - ' J > b > n '7 Darlington Power Transistor 2SC4351 N P N lfc f^ + v r ^ y 2 S C 4 3 5 1 á , ït5 M ;M 7 W " - U > OA • F A ^ ^ í7 /^ X Í- ^ ^ 7 " 7 U =i> h 7 > v ^ i ' h > ^ 0,7 - F x ^ X ^ - C t o ÿ k X i - ^ W P W M ( # - U > h >JtíJí;
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2SC4351
2SC4351
D15594JJ2V0DS00
TD-7509)
D1559
m027
TD-7509
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la 7630
Abstract: TD-7630 2SC4551 IC-20 D1559 1MH60 td7630
Text: NEC y\jz]> /\° 7 - h 7 > y x ^ Silicon Power Transistor 2SC4551 7 JIM V lJ =l > h 7 > V X £ NPNI Ü Ü JfX > f 2SC4551 ü , '^ X ^ T 'L o w tüiâx-f 7 f y mm L T W 5 è £ t ó ''ot7 - h 7 > ¥ i i : mm V c E (s a t)T 'h FE ^ 'it ;^ ( 7 ) T " D C / D C
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2SC4551
2SC4551
PWg300
la 7630
TD-7630
IC-20
D1559
1MH60
td7630
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2SC4549
Abstract: LTWE D1559
Text: 7 s — $ ' y — b - > y = i > /\°7 - k ÿ > y z $ Silicon Power Transistor 2SC4549 T J l ' M V V =1 > h 7 > V X £ NPNX 2 S C 4 5 4 9 li, -y L T I l ^ £ f l ^ ot7 - :J X 9 T" L o w VcE sat T* hFE ^ a. X 9 (T) V' y 4 '< b h 9 > ^ <50 T* D C / D C =t L T
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2SC4549
2SC4549
LTWE
D1559
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G2JS
Abstract: 2SC4550 Immo transistor t 2190 U/25/20/TN26/15/850/G2JS
Text: ~r — $ • y — h /\°7 - Silicon Power Transistor 2SC4550 N 2 S C 455o iî , i i i i x - f P N I f c - v i - v - r m ÿ X j ' t ' L ow VcE sat Iife i ^ t L v x m T . i l ' J f i ÿ y ì i i i i r t z ' - t v - h \ - 7 7 > ' / X > m ^iO T" D C /D C ^ > /S;'— Ÿ ^?~T y7
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2SC4550
2SC4550
PWS300
D15596JJ2V0DS00
G2JS
Immo
transistor t 2190
U/25/20/TN26/15/850/G2JS
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