d1308
Abstract: d1297 D12971E 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed in millimeter 3.0 ±0.3 for high speed switching applications.
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Original
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2SK2411,
2SK2411-Z
2SK2411
d1308
d1297
D12971E
2SK2411-Z
C10535E
C11531E
MP-25
MP-25Z
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PDF
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transistor f 948
Abstract: TRANSISTOR bdp 948 sot 223 marking code 4c TRansistor A 950 siemens sot223 C4217
Text: SIEMENS BDP 948 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low cotiector-emitter saturation voltage BDP 948 BDP 948 Q62702-D1336 1=B o CO BDP 950 BDP 950 Q62702-D1338 1= B 2=C CO
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OCR Scan
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BDP947,
BDP949
Q62702-D1336
Q62702-D1338
OT-223
OT-223
BDP948
transistor f 948
TRANSISTOR bdp 948
sot 223 marking code 4c
TRansistor A 950
siemens sot223
C4217
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PDF
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nec 2501
Abstract: 2SK3110 nec 2702
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
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Original
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2SK3110
2SK3110
O-220
O-220
nec 2501
nec 2702
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PDF
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nec 2702
Abstract: nec 2501 2SK3108
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3108 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
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Original
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2SK3108
2SK3108
O-220
O-220
nec 2702
nec 2501
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PDF
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Untitled
Abstract: No abstract text available
Text: BSO 304SN Infineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Single N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 30 V flbsion
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OCR Scan
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304SN
Q67000-S4012
0235bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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PDF
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2SK3112
Abstract: 2SK3112-S 2SK3112-ZJ MP-25
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3112 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3112 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
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Original
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2SK3112
2SK3112
O-262
2SK3112-ZJ
O-220AB
2SK3112-S
O-263
2SK3112-S
2SK3112-ZJ
MP-25
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
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OCR Scan
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2SK3109
2SK3109
O-220AB
2SK3109-S
O-262
2SK3109-ZJ
O-263
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PDF
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2SK3109
Abstract: 2SK3109-S 2SK3109-ZJ MP-25 1302 diode
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
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Original
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2SK3109
2SK3109
O-262
2SK3109-ZJ
O-220AB
2SK3109-S
O-263
2SK3109-S
2SK3109-ZJ
MP-25
1302 diode
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PDF
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BS0615N
Abstract: smd diode marking code ug SMD diode KL 615N smd diode marking FG smd code marking book smd diode Mu smd code BS0 26APulsed BS0615
Text: BSO 615N Infineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance ^DSion 0.15 ß • Avalanche rated Continuous drain current fc> 2.6 A
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OCR Scan
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SIS000S8
Q67041-S2843
S35bG5
D133777
SQT-89
O-92-E6288
BS0615N
smd diode marking code ug
SMD diode KL
615N
smd diode marking FG
smd code marking book
smd diode Mu
smd code BS0
26APulsed
BS0615
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PDF
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2SK3111
Abstract: 2SK3111-S 2SK3111-ZJ MP-25
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
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Original
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2SK3111
2SK3111
O-262
2SK3111-ZJ
O-220AB
2SK3111-S
O-263
2SK3111-S
2SK3111-ZJ
MP-25
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PDF
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d1333
Abstract: 2SK3113 2SK3113-Z 2SK3113 equivalent
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristic, and 2SK3113
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Original
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2SK3113
2SK3113
O-251
2SK3113-Z
O-252
O-251)
d1333
2SK3113-Z
2SK3113 equivalent
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PDF
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2SK3113 equivalent
Abstract: 2SK3113 2SK3113-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristic, and 2SK3113
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Original
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2SK3113
2SK3113
O-251
2SK3113-Z
O-252
O-251)
2SK3113 equivalent
2SK3113-Z
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PDF
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2SK3114 equivalent
Abstract: 2sk3114 2SK3114 APPLICATION
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and PART NUMBER
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Original
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2SK3114
2SK3114
O-220
O-220)
O-220
2SK3114 equivalent
2SK3114 APPLICATION
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION NEC / MOS FIELD EFFECT TRANSISTOR / 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
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OCR Scan
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2SK3111
2SK3111
O-262
2SK3111-ZJ
O-220AB
2SK3111-S
O-263
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PDF
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|
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2SK3112-ZJ
Abstract: 2SK3112 2SK3112-S MP-25
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3112 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3112 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics,
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Original
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2SK3112
2SK3112
O-220AB
2SK3112-S
O-262
2SK3112-ZJ
O-263
MP-25ZJ)
O-220AB)
2SK3112-ZJ
2SK3112-S
MP-25
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PDF
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k3113
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2S K 3113 is N-channel DMOS FET device that features a ORDERING INFORMATION Part Number low gate charge and excellent switching characteristics, and
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OCR Scan
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2SK3113
O-251
2SK3113-Z
O-252
k3113
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PDF
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Untitled
Abstract: No abstract text available
Text: BSO 302SN Infineon t«chnolog¡«i Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Single N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ^S on • Avalanche rated Continuous drain current
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OCR Scan
|
302SN
Q67041-S4029
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
|
PDF
|
2SK3112
Abstract: 2SK3112-S 2SK3112-ZJ MP-25
Text: PRELIMINARY PRODUCT INFORMATION NEC / MOS FIELD EFFECT TRANSISTOR / 2SK3112 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2S K 3112 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
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OCR Scan
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2SK3112
2SK3112
2SK3112-S
2SK3112-ZJ
O-220AB
O-262
O-263
O-220AB
MP-25
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PDF
|
Untitled
Abstract: No abstract text available
Text: BSO 305N I nf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features 30 V • Dual N Channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current
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OCR Scan
|
SIS0005Â
Q67041-S4028
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPD 07N20 In fin e o n technologies Preliminary Data SIPMOS Power Transistor Product Summary Features Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated V 200 Drain source voltage • N channel ^ D S o n
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OCR Scan
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07N20
67040-S
112-A
S35bQ5
SQT-89
B535bQ5
D13377Ã
B235bG5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSO 307N I nf ine on technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features Drain source voltage Vqs • Enhancement mode Drain-Source on-state resistance ffos on • Avalanche rated Continuous drain current b • Dual N channel
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OCR Scan
|
sisooo56
Q67000-S4012
0235bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
|
PDF
|
PW610
Abstract: TEA1034 2SK 246 transistor alps ALP Q8060 pw410 2SK 2462 transistor nec Semiconductors Selection Guide X-2462 LF 20v0
Text: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ324 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. in millimeters FEATURES 1 l Low On-state Resistance RDS ~~ = 0.18 Q TYP. (VGS = -10 V,
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Original
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2SJ324
IEI-1209)
PW610
TEA1034
2SK 246 transistor
alps ALP
Q8060
pw410
2SK 2462 transistor
nec Semiconductors Selection Guide
X-2462
LF 20v0
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PDF
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smd transistor 43t
Abstract: marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor BUZ102S smd code book transistor 43t SMD E3045 G1333
Text: Infineon , m proved technologies BUZ102S ' SIPMOS Power Transistor Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current b CO Features 55 V 0.018
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OCR Scan
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BUZ102S
P-T0220-3-1
Q67040-S4011-A2
E3045A
P-T0263-3-2
Q67040-S4011-A6
E3045
smd transistor 43t
marking code ya SMD Transistor
MARKING SMD 43t
SMD MARKING CODE 43t
smd 43t transistor
smd code book transistor
43t SMD
G1333
|
PDF
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kd smd transistor
Abstract: No abstract text available
Text: » •— SPD 28N03L Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS Drain-Source on-state resistance f îDS on 0.018 Q 30 A • Enhancement mode Continuous drain current • Avalanche rated
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OCR Scan
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28N03L
SPD28N03L
Q67040-S4139-A2
P-T0252
P-T0251-3-1
Q67040-S4142-A2
SPU28N03L
S35bG5
Q133777
SQT-89
kd smd transistor
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PDF
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