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    TRANSISTOR D132 Search Results

    TRANSISTOR D132 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D132 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NEC JAPAN 2415

    Abstract: NEC 2415 2415-Z 2SK2415
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415,2415-Z SWITCHING N-CHANNEL POWER MOS FET Description The 2SK2415 is N-Channel MOS Field Effect Transistor de- PACKAGE DRAWINGS Unit : mm signed for high voltage switching applications. 1.5 −0.1 Features +0.2


    Original     		2SK2415 2415-Z O-251 NEC JAPAN 2415 NEC 2415 2415-Z PDF

    2SK2415

    Abstract: 2SK2415-Z IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2415 is N-Channel MOS Field Effect Transistor designed + 0.2 1.5 – 0.1 in millimeters for high voltage switching applications.


    Original     		2SK2415, 2SK2415-Z 2SK2415 2SK2415-Z IEI-1213 MEI-1202 MF-1134 PDF

    2SK3105

    Abstract: marking xa
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.4 +0.1 –0.05 • Can be driven by a 4 V power source • Low on-state resistance


    Original     		2SK3105 2SK3105 marking xa PDF

    2SJ557

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.4 +0.1 –0.05 • Can be driven by a 4 V power source • Low on-state resistance


    Original     		2SJ557 2SJ557 PDF

    PA1813

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and


    Original     		PA1813 PA1813 PDF

    PA1813

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and


    Original     		PA1813 PA1813 PDF

    PA1854

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1854 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1854 is a switching device which can be driven directly by a 2.5-V power source. The µPA1854 features a low on-state resistance and


    Original     		PA1854 PA1854 PA1854GR-9JG PDF

    PA1854

    Abstract: a4660
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1854 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1854 is a switching device which can be driven directly by a 2.5-V power source. The µPA1854 features a low on-state resistance and


    Original     		PA1854 PA1854 a4660 PDF

    2SJ557

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 3 1.5 • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)


    Original     		2SJ557 2SJ557 PDF

    2SK3105

    Abstract: marking xa
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION FEATURES 3 1.5 • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 95 mΩ MAX. (VGS = 10 V, ID = 1.5 A)


    Original     		2SK3105 2SK3105 marking xa PDF

    PW610

    Abstract: TEA1034 2SK 246 transistor alps ALP Q8060 pw410 2SK 2462 transistor nec Semiconductors Selection Guide X-2462 LF 20v0
    Text: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ324 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. in millimeters FEATURES 1 l Low On-state Resistance RDS ~~ = 0.18 Q TYP. (VGS = -10 V,


    Original     		2SJ324 IEI-1209) PW610 TEA1034 2SK 246 transistor alps ALP Q8060 pw410 2SK 2462 transistor nec Semiconductors Selection Guide X-2462 LF 20v0 PDF

    NEC 2415

    Abstract: NEC JAPAN 2415 2SK2415
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415,2415-Z SWITCHING N-CHANNEL POWER MOS FET Description PACKAGE DRAWINGS Unit: mm TO-251 (MP-3) 1.5 −0.1 5.0 ±0.2 RDS(on)2 = 0.15 Ω MAX. (VGS = 4 V, ID = 4.0 A) 2 5.5 ±0.2 1 RDS(on)1 = 0.10 Ω MAX. (VGS = 10 V, ID = 4.0 A)


    Original     		2SK2415 2415-Z O-251 NEC 2415 NEC JAPAN 2415 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 4 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1854 is a switching device which can be driven directly by a 2.5-V power source.


    OCR Scan     		uPA1854 D13295EJ1V0DS00 PA1854 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 1 3 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The JUPA1813 is a switching device which can be driven directly by a 2.5-V power source.


    OCR Scan     		JUPA1813 D13294EJ1V0DS00 PA1813 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSO 304SN Infineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Single N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 30 V flbsion


    OCR Scan     		304SN Q67000-S4012 0235bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP 171P Inf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Features Product Summary • P Channel Drain source voltage Vbs -60 V • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current wDS on 0.3


    OCR Scan     		BSP171P P-SOT223-4-1 Q67041-S4019 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T PDF

    Untitled

    Abstract: No abstract text available
    Text: BSO 302SN Infineon t«chnolog¡«i Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Single N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ^S on • Avalanche rated Continuous drain current


    OCR Scan     		302SN Q67041-S4029 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T PDF

    Untitled

    Abstract: No abstract text available
    Text: BSO 305N I nf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features 30 V • Dual N Channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current


    OCR Scan     		SIS0005Â Q67041-S4028 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T PDF

    Microwave Oven Inverter Control IC

    Abstract: No abstract text available
    Text: PaiKföonic Others AN6718N Microwave Oven Inverter Control 1C • Overview The AN6718N is an IC for resonance type inverter con­ trol of microwave oven. It can directly control the IGBT Insulated Gate Bipolar Transistor and incorporates the various protective functions.


    OCR Scan     		AN6718N AN6718N i32fiS2 Microwave Oven Inverter Control IC PDF

    A1022

    Abstract: D601A c2480 C4561 S-Mini D1938 transistor A1022 D602A XN06506
    Text: Transistors Selection Guide by Applications and Functions •5-Pin S-Mini Type (D8)*5-Pin Mini Type (D15)*6-Pin S-Mini Type (D9)*6-Pin Mini Type (D16) Package Transistor, FET # Transistors (XN: 5- and 6-Pin Mini Type Package, XP: 5- and 6-Pin S-Mini Type Package)


    OCR Scan     		XN6501 XP6501 D601A C4444 C2480 C3904 C4561 XN6543 C2404 D1149 A1022 D601A S-Mini D1938 transistor A1022 D602A XN06506 PDF

    D1915

    Abstract: D1915 Transistors TRANSISTOR D1915 c3904 D1915 transistor B709A A1022 xp5555 XN4501 XP1201
    Text: Transistors Selection Guide by Applications and Functions •5 Pin S Mini Type (D6) *5 Pin Mini Type (D11) *6 Pin S Mini Type (D7) *6 Pin Mini Type (D12) Package Transistor, FET A Preliminary # Resistor Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package)


    OCR Scan     		XN1401 XP1401 XN1501 XP1501 XN1601 XP1601 XN1B301 XP1B301 XN1C301 XP1C301 D1915 D1915 Transistors TRANSISTOR D1915 c3904 D1915 transistor B709A A1022 xp5555 XN4501 XP1201 PDF

    D1915

    Abstract: D1915 Transistors d1915f TRANSISTOR D1915 D1915 transistor XN1111 mini type (D7)
    Text: Transistors Selection Guide by Applications and Functions • 5 Pin S Mini Type (D6) *5 Pin Mini Type (D11) *6 Pin S Mini Type (D7) *6 Pin Mini Type (D12) Package Transistor, FET A Preliminary # Resistor Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package)


    OCR Scan     		XN1111 XP1111 XN1112 XP1112 XN1113 XP1113 XN1114 XP1114 XN1115 XP1115 D1915 D1915 Transistors d1915f TRANSISTOR D1915 D1915 transistor mini type (D7) PDF

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 PDF

    smd code book transistor

    Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE 5c smd transistor c015 P-T0252-3-1 D 92 M - 02 DIODE SMD TRANSISTOR MARKING 5c all transistor book SMD TRANSISTOR MARKING fq smd code book KO
    Text: BSP 92 Infineon t « c h n o l o g i •* SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0 .8 .-2 .0 V Pin 1 Type ^bs b BSP 92 -240 V -0.2 A Type BSP 92 Ordering Code Q62702-S653 Pin 2 °D S (on) Package


    OCR Scan     		OT-223 Q62702-S653 E6327 fiS35bG5 D133777 SQT-89 O-92-E6288 smd code book transistor TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE 5c smd transistor c015 P-T0252-3-1 D 92 M - 02 DIODE SMD TRANSISTOR MARKING 5c all transistor book SMD TRANSISTOR MARKING fq smd code book KO PDF