2SK2480
Abstract: IEI-1213 MEI-1202 MF-1134 mj 15003 power circuit
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2480 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2480 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3
|
Original
|
2SK2480
2SK2480
O-220
IEI-1213
MEI-1202
MF-1134
mj 15003 power circuit
|
PDF
|
TEA-1035
Abstract: tea 1035 2SK2486 IEI-1213 MEI-1202 MF-1134 MP-88
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2486 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2486 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. 4 20.0±0.2
|
Original
|
2SK2486
2SK2486
TEA-1035
tea 1035
IEI-1213
MEI-1202
MF-1134
MP-88
|
PDF
|
transistor d 1302
Abstract: 2SK2510 IEI-1213 MEI-1202 MF-1134 TEA-1037
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2510 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2510 is N-Channel MOS Field Effect Transistor designed in millimeter for high current switching applications. FEATURES 10.0±0.3
|
Original
|
2SK2510
2SK2510
transistor d 1302
IEI-1213
MEI-1202
MF-1134
TEA-1037
|
PDF
|
2SK2482
Abstract: IEI-1213 MEI-1202 MF-1134 MP-88
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2482 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2482 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. 4 20.0±0.2
|
Original
|
2SK2482
2SK2482
IEI-1213
MEI-1202
MF-1134
MP-88
|
PDF
|
TEA-1035
Abstract: 2SK2512 IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2512 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2512 is N-Channel MOS Field Effect Transistor designed in millimeter for high current switching applications. FEATURES 10.0±0.3
|
Original
|
2SK2512
2SK2512
TEA-1035
IEI-1213
MEI-1202
MF-1134
|
PDF
|
2SK2487
Abstract: IEI-1213 MEI-1202 MF-1134 MP-88
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2487 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2487 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. 4 20.0±0.2
|
Original
|
2SK2487
2SK2487
IEI-1213
MEI-1202
MF-1134
MP-88
|
PDF
|
IEI-1213
Abstract: MEI-1202 MF-1134 MP-88 2SK2514
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2514 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2514 is N-Channel MOS Field Effect Transistor designed in millimeter for high current switching applications. 4 20.0±0.2
|
Original
|
2SK2514
2SK2514
45Special:
IEI-1213
MEI-1202
MF-1134
MP-88
|
PDF
|
2SK2477
Abstract: IEI-1213 MEI-1202 MF-1134 MP-88 D1026
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2477 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2477 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. 4 20.0±0.2
|
Original
|
2SK2477
2SK2477
IEI-1213
MEI-1202
MF-1134
MP-88
D1026
|
PDF
|
2SK2483
Abstract: IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2483 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2483 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3
|
Original
|
2SK2483
2SK2483
IEI-1213
MEI-1202
MF-1134
|
PDF
|
2SK2478
Abstract: IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2478 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3
|
Original
|
2SK2478
2SK2478
O-220
IEI-1213
MEI-1202
MF-1134
|
PDF
|
2SK2478
Abstract: IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2478 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3
|
Original
|
2SK2478
2SK2478
O-220
IEI-1213
MEI-1202
MF-1134
|
PDF
|
2SK2476
Abstract: IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2476 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2476 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3
|
Original
|
2SK2476
2SK2476
O-220
IEI-1213
MEI-1202
MF-1134
|
PDF
|
2sk2485
Abstract: TEA-1035 IEI-1213 MEI-1202 MF-1134 MP-88
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2485 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2485 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. 4 20.0±0.2
|
Original
|
2SK2485
2SK2485
TEA-1035
IEI-1213
MEI-1202
MF-1134
MP-88
|
PDF
|
2SK2488
Abstract: IEI-1213 MEI-1202 MF-1134 MP-88
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2488 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2488 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES Drain to Source Voltage
|
Original
|
2SK2488
2SK2488
IEI-1213
MEI-1202
MF-1134
MP-88
|
PDF
|
|
|
2SK2484
Abstract: IEI-1213 MEI-1202 MF-1134 MP-25
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2484 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2484 is N-Channel MOS Field Effect Transistor de- in millimeters FEATURES • Low On-Resistance 3.6 ± 0.2 6.0 MAX. 1 2 3
|
Original
|
2SK2484
2SK2484
IEI-1213
MEI-1202
MF-1134
MP-25
|
PDF
|
2SK2482
Abstract: MP-88
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2482 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2482 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low on-state resistance RDS on = 4.0 Ω MAX. (VGS = 10 V, ID = 3.0 A)
|
Original
|
2SK2482
2SK2482
MP-88
|
PDF
|
2SK2479
Abstract: IEI-1213 MEI-1202 MF-1134 MP-25 ED 03 Diode
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2479 is N-Channel MOS Field Effect Transistor de- in millimeters • Low On-Resistance 3.6 ± 0.2 4 1.3 ± 0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
|
Original
|
2SK2479
2SK2479
IEI-1213
MEI-1202
MF-1134
MP-25
ED 03 Diode
|
PDF
|
nec 2sk2511
Abstract: transistor 2SK2511 2SK2511 IEI-1213 MEI-1202 MF-1134 MP-88
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2511 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2511 is N-Channel MOS Field Effect Transistor designed in millimeter for high current switching applications. RDS (on)2 = 40 mΩ (VGS = 4 V, ID = 20 A)
|
Original
|
2SK2511
2SK2511
nec 2sk2511
transistor 2SK2511
IEI-1213
MEI-1202
MF-1134
MP-88
|
PDF
|
2SK2481
Abstract: IEI-1213 MEI-1202 MF-1134 MP-25
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2481 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2481 is N-Channel MOS Field Effect Transistor de- in millimeters • Low On-Resistance 3.6 ± 0.2 4 1.3 ± 0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
|
Original
|
2SK2481
2SK2481
IEI-1213
MEI-1202
MF-1134
MP-25
|
PDF
|
2SK2485
Abstract: MP-88
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2485 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2485 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low on-state resistance RDS on = 2.8 Ω MAX. (VGS = 10 V, ID = 3.0 A)
|
Original
|
2SK2485
2SK2485
M8E0904E
MP-88
|
PDF
|
2SK2479
Abstract: IEI-1213 MEI-1202 MF-1134 MP-25
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2479 is N-Channel MOS Field Effect Transistor designed in millimeters • Low On-Resistance 3.6 ± 0.2 RDS(on) = 7.5 W (VGS = 10 V, ID = 2.0 A)
|
Original
|
2SK2479
2SK2479
IEI-1213
MEI-1202
MF-1134
MP-25
|
PDF
|
2SK2485
Abstract: D1027 MP-88
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2485 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2485 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low on-state resistance RDS on = 2.8 Ω MAX. (VGS = 10 V, ID = 3.0 A)
|
Original
|
2SK2485
2SK2485
D1027
MP-88
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2510 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2510 is N-Channel MOS Field Effect Transistor designed PACKAGE DIMENSIONS in millimeter for high current switching applications. FEATURES •
|
OCR Scan
|
2SK2510
2SK2510
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2481 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2481 is N-Cbarinel MOS Field Effect Transistor de PACKAGE DIMENSIONS in millimeters signed for high voltage switching applications. FEATURES
|
OCR Scan
|
2SK2481
2SK2481
|
PDF
|
