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    TRANSISTOR D 965 AL Search Results

    TRANSISTOR D 965 AL Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 965 AL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR 955 E

    Abstract: PTB 20148 35 W 960 MHz RF POWER TRANSISTOR NPN IC 935 965 transistor
    Text: e PTB 20148 60 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP


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    PDF 1-877-GOLDMOS 1301-PTB TRANSISTOR 955 E PTB 20148 35 W 960 MHz RF POWER TRANSISTOR NPN IC 935 965 transistor

    Buzzer 4khz

    Abstract: 1205 transistor buzzer 1205 LC5739 QFP64 p13 transistor OSC XTAL 32.768KHZ transistor 1205 transistor A 1205 12 Y
    Text: Ordering number : ENN*6704 CMOS IC LC5739 4-Bit Microcontroller with LCD Driver Preliminary Overview The LC5739 is a CMOS 4-bit microcontroller that operates on low voltage and very low power consumption. It also contains 4K-byte ROM, 128-byte RAM, LCD drivers and melody function.


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    PDF LC5739 LC5739 128-byte 768kHz P00-03, P10-13 Figure11 Buzzer 4khz 1205 transistor buzzer 1205 QFP64 p13 transistor OSC XTAL 32.768KHZ transistor 1205 transistor A 1205 12 Y

    1205 transistor

    Abstract: buzzer 1205 transistor 1205 alm1
    Text: Ordering number : ENN*6704 CMOS IC LC5739 4-Bit Microcontroller with LCD Driver Preliminary Overview The LC5739 is a CMOS 4-bit microcontroller that operates on low voltage and very low power consumption. It also contains 4K-byte ROM, 128-byte RAM, LCD drivers and melody function.


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    PDF LC5739 LC5739 128-byte 768kHz P00-03, P10-13 Figure11 1205 transistor buzzer 1205 transistor 1205 alm1

    500 watts amplifier schematic diagram pcb layout

    Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor
    Text: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a


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    PDF AN1670/D AN1670 500 watts amplifier schematic diagram pcb layout 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor

    MRF184

    Abstract: transistor 955 MOTOROLA smd-transistor DATA BOOK MRF6522-10 AN1670 RO4003 SMD TRANSISTOR smd J225 Nippon capacitors
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1670/D AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France


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    PDF AN1670/D AN1670 MRF184 transistor 955 MOTOROLA smd-transistor DATA BOOK MRF6522-10 AN1670 RO4003 SMD TRANSISTOR smd J225 Nippon capacitors

    MAX891L

    Abstract: MAX891LEUA MAX892L MAX892LEUA
    Text: 19-1223; Rev 0; 4/97 Current-Limited, High-Side P-Channel Switches with Thermal Shutdown The MAX891L/MAX892L smart, low-voltage, P-channel, MOSFET power switches are intended for high-side load-switching applications. These switches operate with inputs from 2.7V to 5.5V, making them ideal for


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    PDF MAX891L/MAX892L 500mA 250mA, EIA481-1 MAX891L/MAX892L MAX891L MAX891LEUA MAX892L MAX892LEUA

    Untitled

    Abstract: No abstract text available
    Text: VPDQ1 DIE P-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d VPDQ1CHP* BSS92 TP2020L TP1220L VP2020L 0.038 ‘ Meets or exceeds specification for all part numbers listed below For additional design information please consult the 0. 965 ( 0 .254)


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    PDF BSS92 TP2020L TP1220L VP2020L VPDQ20.

    transistor power rating 5w

    Abstract: No abstract text available
    Text: A fa C pM m an A M P com pany C>N Power Transistor, 5W 2.3 GHz PH2323-5 V2.00 Features • • • • • • • NPN Silicon M icrow ave P o w er T ransistor C o m m o n B ase C o n figu ratio n C lass C O peratio n In terd igitated G e o m e try D iffu sed Em itter B allastin g R esistors


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    PDF PH2323-5 transistor power rating 5w

    Untitled

    Abstract: No abstract text available
    Text: Infineon i« c h n c I o g i <ií CMY 210 - 880 MHz to 85 MHz D o w n -C o n verte r A p p lic a tio n Note No. 038 The CMY 210 is a ultralinear mixer with integrated LO-buffer for frequencies up to and exceeding 2.5 GHz. A low LO-input power of typically 0 dBm is sufficient to provide a


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    PDF EHT09

    VN10KM

    Abstract: No abstract text available
    Text: ÜBSSb VNDP1 DIE N-Channel Enhancement-Mode MOS Transistor VNDP1CHP* VN0610L VN10KE VN10KM VN2222L ‘ Meets or exceeds specification for all part numbers listed below Gate Pad 0.0088 0 . 224 0.0063 ( 0.161 Source Pad For additional design information please consult the


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    PDF VN0610L VN10KE VN10KM VN2222L VNDP06.

    Untitled

    Abstract: No abstract text available
    Text: 19-1223; Rev O; 4/97 > k i y i x i > k i Current-Limited, High-Side P-Channe! Sw itches with Therm al Shutdown Genera! Description The MAX891L/MAX892L&#39;s maximum current limits are 500mA and 250mA, respectively. The current limit through the switch is programmed with a resistor from


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    PDF MAX891L/MAX892L 500mA 250mA, 5fl7bb51

    lm358 current sense

    Abstract: lm358 16pin diagram LM324 noise Enhancement Mode MOSFET Array pin configuration of LM358 disadvantages of mosfet
    Text: P W R -N C H 2 0 1 -T-39-»-» 2-Channel MOSFET Array 400 V - 675 mA per channel POWER in t e g r a l s a a a Product Highlights 2 open-drain N-channel MOSFETs per package PWR-NCH201


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    PDF PWR-NCH201 OTO70° PWR-NCH201BNC1 16-PIN PWR-NCH201BNC2 PWR-NCH201BNC3 lm358 current sense lm358 16pin diagram LM324 noise Enhancement Mode MOSFET Array pin configuration of LM358 disadvantages of mosfet

    MC1391P

    Abstract: MC1391
    Text: g MOTOROLA MC1391 TV Horizontal Processor The MC1391 provides low -level horizontal sections including phase detector, oscillator and pre-driver. This device was designed for use in all types of television receivers. TV HORIZONTAL PROCESSOR • Internal Shunt Regulator


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    PDF MC1391 MC1391 MC1391P

    L42n

    Abstract: HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e
    Text: H0NEYWE1_I_/SS ELEK-, MIL [13 I>e | 4551872 DD00212 D • “ H o n eyw e ll r - n - ll'O HM3500, hvmioooo, HE12000 Preliminary ADVANCED DIGITAL BIPOLAR GATE ARRAY FAMILY FAMILY FEATURES • Broad Performance Optimized Family Allows Flexible System Partitioning:


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    PDF DD00212 HM3500, HE12000 ECL10K/KH/100K 148-Pin MIL-M-38510/600 MIL-STD-883C L42n HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e

    U820 Diode

    Abstract: 0555B TDB0555B Diode BAY 61 diode u820 TDB 0555B transistor a965 nf schaltungen darlington bd 645 P430-e11
    Text: S IE M E N S Technische Mitteilung aus dem Bereich Bauelemente -io idun istechnik •Anwendungstechnik *Anwendung , wendungstechr idungstechnik -Anwendungstechnik •An ldt ' ' O idungstechnik *Anwendungstechnik *A 9ndi ' • ' Integrierter Fenster­ diskriminator TCA 965


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    Untitled

    Abstract: No abstract text available
    Text: Afa Satellite Communications Power Transistor PH 1600-30 30 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing C W Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System Absolute Maximum Ratings at 25°C


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    PDF TT50M ATC100A 5bM220S

    2SA606

    Abstract: 2SC945 206C 2SA573 2SA574 2SA575 2SA733 SA607 2sc945b EP455
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 150nS 800nS Te-25 500MHz. 2SA606 2SC945 206C 2SA573 2SA574 2SA575 2SA733 SA607 2sc945b EP455

    16f 676

    Abstract: kd 503 transistor LT 5251 transistor KD 503 ccd sharp 13B1 LR36685 RJ24J3AA0PT kd 506 transistor kd 778
    Text: BACK SHARP RJ24J3AA0PT DESCRIPTION The RJ24J3AA0PT is a 1/3.2-type 5.60 mm solidstate image sensor that consists of PN photo­ diodes and CCD s (charge-coupled devices). With approximately 1 310 000 pixels (1 344 horizontal x 971 vertical), the sensor provides a stable highresolution color image.


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    PDF RJ24J3AA0PT RJ24J3AA0PT moni-5819 16f 676 kd 503 transistor LT 5251 transistor KD 503 ccd sharp 13B1 LR36685 kd 506 transistor kd 778

    tic6064

    Abstract: 850-960MHz
    Text: ERICSSON $ PTB 20167 60 Watts, 850-960 MHz RF Power Transistor D escription The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier


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    SGM2004M

    Abstract: "GaAs N-channel Dual Gate" UA 471 CN sgm2004 100MIL ALSV Sony 104A
    Text: SGM2004M SONY. GaAs N-channel Dual Gate MES FET Description Package Outline Unit : mm SG M 2 00 4M is an N-channel dual gate G aA s M ES F E T for UHF band low-noise am plification. T h is F E T is suitable fo r a wide range of ap p licatio n s including T V tuners, cellular radios


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    PDF SGM2004M SGM2004M OT-143 M-254 50MIL) 127mm "GaAs N-channel Dual Gate" UA 471 CN sgm2004 100MIL ALSV Sony 104A

    lc 945 p transistor NPN TO 92

    Abstract: lc 945 p transistor NPN lc 945 transistor lc 945 p transistor
    Text: ERICSSON ^ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications.


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    transistor 1201 1203 1205

    Abstract: 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282
    Text: ALPHANUMERICAL INDEX Type Function Number Page Number AVS08 V fH Automatic Mains Selector 110/220V AC for SMPS < 200W 937 AVS10 Automatic Mains Selector (110/220V AC) for SMPS < 3CI0W 943 / Automatic Mains Selector (110/220V AC) for SMPS < 500W 949 v / Automatic Voltage Switch (SMPS < 300W ).


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    PDF AVS08 AVS10 110/220V TEA6420J TEA6422 TEA6425 TEA6430 TEA7605 transistor 1201 1203 1205 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282

    Transistor TT 2246

    Abstract: TT 2246 transistor tt 2246 2SC2232 transistor tt 2247 tk 2238 2SA969 2236 1F 2SA981 2SA965
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF /-900MHz, 900MHz. Vct-18V 17c-25 200/unit 250-P00 2SA980 2SA981 Transistor TT 2246 TT 2246 transistor tt 2246 2SC2232 transistor tt 2247 tk 2238 2SA969 2236 1F 2SA965

    2sc2238

    Abstract: 2SC2194 LSOW 2SA953 2SC2002 2SC2003 2SC2235 2SC2236 2SC2239 transistor 2sC2238
    Text: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 200/unit 2SC2260 2SC2261 2SC2262 2sc2238 2SC2194 LSOW 2SA953 2SC2002 2SC2003 2SC2235 2SC2236 2SC2239 transistor 2sC2238