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    TRANSISTOR D 798 Search Results

    TRANSISTOR D 798 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 798 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bd798

    Abstract: BD8015 Motorola design of audio amplifier power transistor audio amplifier 500 watts BD801 MOTOROLA TRANSISTOR transistor BD 522
    Text: MOTOROLA Order this document by BD801/D SEMICONDUCTOR TECHNICAL DATA BD801 Plastic High Power Silicon NPN Transistor 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi


    Original     		PDF BD801/D* BD801/D bd798 BD8015 Motorola design of audio amplifier power transistor audio amplifier 500 watts BD801 MOTOROLA TRANSISTOR transistor BD 522

    M38527

    Abstract: M38527/2-05D M38527/01-036D A55485/02-032D M38527/06-022D M38527/3-01D M38527/02-001D M38527/02-005D M38527/03-015N M38527/1-030D
    Text: molded power transistor mounts Material Specifications: Nylon, per ASTM D 4066 PA111 UL Rated 94V-2 Oxygen Rating Index: Over 28% Standard Drawing Tolerances: unless otherwise indicated Fractions: +_ 1/64 (0.4) .XX = +_ 0.01 (0.25) + _ 0.10 (2.5) .X = .XXX = +_ 0.005 (0.13)


    Original     		PDF PA111 O-202, O-220 HC-18/U, HC-43/U HC-49/U CI-192-028 M38527 M38527/2-05D M38527/01-036D A55485/02-032D M38527/06-022D M38527/3-01D M38527/02-001D M38527/02-005D M38527/03-015N M38527/1-030D

    CEP9060R

    Abstract: 260uH CEB9060R CEF9060R QG60
    Text: CEP9060R/CEB9060R CEF9060R N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP9060R 55V 10.5mΩ 100A 10V CEB9060R 55V 10.5mΩ 100A CEF9060R 55V 10.5mΩ 100A 10V e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP9060R/CEB9060R CEF9060R CEP9060R CEB9060R O-220 O-263 O-220F CEP9060R 260uH CEB9060R CEF9060R QG60

    CEP9060R

    Abstract: CEB9060R CEF9060R
    Text: CEP9060R/CEB9060R CEF9060R N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP9060R 55V 10.5mΩ 100A 10V CEB9060R 55V 10.5mΩ 100A CEF9060R 55V 10.5mΩ 100A 10V e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP9060R/CEB9060R CEF9060R CEP9060R CEB9060R O-220 O-263 O-220F CEP9060R CEB9060R CEF9060R

    PCF7952

    Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
    Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.


    Original     		PDF VP22480-3 VP22480-5 VP22530-2 PCF7952 pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191

    BFW16A

    Abstract: TRANSISTOR C 1177 Transistor D 798 bfw16a philips
    Text: Philips Semiconductors Product specification T 31 17 NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL SbE D DESCRIPTION MING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case. 1 The transistor has extremely good intermodulation properties and a


    OCR Scan     		PDF BFW16A 711082b MBB96S UEAS88 711Qfl2b 4bQ22 BFW16A TRANSISTOR C 1177 Transistor D 798 bfw16a philips

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    BFX89

    Abstract: case BFX89 transistor IR 652 P
    Text: N AMER P H I L I P S / D I S C R E T E 25E D • b tiS 3 T 3 1 0 0 1 flE 2 3 ■ BFX89 . 'T -S I-iÇ ' N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the case. The transistor has a low noise, a very high power gain and good intermodulation properties.


    OCR Scan     		PDF bbS3T31 BFX89 7Z08812 7Z08857 7Z08814 T-37-15 7Z08815 BFX89 case BFX89 transistor IR 652 P

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors bb53*131 □03212*1 STD • APX Product specification NPN 1 GHz wideband transistor BFW16A N AMER PHILIPS/DISCRETE DESCRIPTION blE D PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.


    OCR Scan     		PDF BFW16A BB364

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors kb53R31 003213^ 44T IHAPX Product specification NPN 1 GHz wideband transistor £ BFW92 N AUER PHILIPS/DISCRETE b'lE D PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope. It has a low noise over a wide current range, a very high power


    OCR Scan     		PDF kb53R31 BFW92 BFW92/02 MEA393

    BFY90 PHILIPS

    Abstract: BFY90 ic 1014b PHILIPS WIDE BAND AMPLIFIERS 3I15 enamelled copper wire
    Text: P hilips Sem iconductors Product specification NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE BFY90 T> 713.0a2b Dü4ti04S D24 • P H IN PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the


    OCR Scan     		PDF BFY90 711002b 004bD4^ MBA383 BFY90 PHILIPS BFY90 ic 1014b PHILIPS WIDE BAND AMPLIFIERS 3I15 enamelled copper wire

    Untitled

    Abstract: No abstract text available
    Text: DTA123YU/DTA123YK/DTA123YS/DTA123YF DTA123YL/DTA123YA/DTA123YV / T ransistors D TA 123Y U /D TA 123Y K /D TA 123 YS D TA 123Y F/D TA 123Y L/D TA 123 YA DTA123YV 7 ^/Transistor Switch Digital Transistors Includes Resistors • ^ W ^ T H ill/D im en sio n s (Unit: mm)


    OCR Scan     		PDF DTA123YU/DTA123YK/DTA123YS/DTA123YF DTA123YL/DTA123YA/DTA123YV DTA123YV

    transistor bfw16a

    Abstract: transistors BFW16A vk200 philips BFW16A bfw16a philips bfw16a philips semiconductor ic 1014b vk200
    Text: Philips Sem iconductors bbsa'm Product specification 003212'ì STO • APX NPN 1 GHz wideband transistor BFW16A N AMER P H ILIP S /D IS C R E T E DESCRIPTION t^ E PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.


    OCR Scan     		PDF bbS3T31 BFW16A bb53T31 D03B131 BFW16A transistor bfw16a transistors BFW16A vk200 philips bfw16a philips bfw16a philips semiconductor ic 1014b vk200

    transistor BD 522

    Abstract: bd800 bd802 TRANSISTOR BD 168 BD798 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800
    Text: MOTORCLA SC XSTRS/R 12E F D I b3fcj72SM MOTOROLA Qüfl MTST " M | BD796 BD798 SEMICONDUCTOR TECHNICAL DATA BÒ800 BD8Û2 PLASTIC HIGH POWER SILICON PNP TRANSISTOR 8 AMPERE POWER TRANSISTOR . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.


    OCR Scan     		PDF b3fcj72SM BD796 BD798 BD798 BD800 BD802 transistor BD 522 TRANSISTOR BD 168 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800

    vk200 philips

    Abstract: BFY90 PHILIPS BFY90 VK200 Philips BFy90
    Text: Philips Semiconductors b b s a ia i D0321S5 b^E M AP V Product specification NPN 1 GHz wideband transistor BFY90 N DESCRIPTION AMER P H IL IP S /D IS C R E T E bTE PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the


    OCR Scan     		PDF D0321S5 BFY90 andS15q UEA397 vk200 philips BFY90 PHILIPS BFY90 VK200 Philips BFy90

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    transistor BUX 48

    Abstract: bux 42 emetteur BUX42 transistor BUX
    Text: *BUX42 N P N S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A TR A N S IS T O R S IL IC IU M NPN. M ESA T R IP L E D IF F U S E ^ P re ferred device D isp o sitif recommandé High speed, high curre n t, high pow er transistor T ransistor de puissance rapid e, f o r t c o u ra n t


    OCR Scan     		PDF BUX42 CB-19 transistor BUX 48 bux 42 emetteur BUX42 transistor BUX

    ED-2522

    Abstract: TIC 33 LCD
    Text: DATA SHEET TFT COLOR LCD MODULE NL8060BC26-13 26 cm 10.4 type , 800 x 600 pixels, 262144 colors, incorporated one lamp/edge-light type backlight D E S C R IP T IO N N L8060BC 26-13 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) module com prising


    OCR Scan     		PDF NL8060BC26-13 L8060BC ED-2522 TIC 33 LCD

    Untitled

    Abstract: No abstract text available
    Text: rz 7 ^ 7 # SCS-THOMSON 5 I L i t m * ! T D A 8 1 4 3 HORIZONTAL DEFLECTION POWER DRIVER The current source characteristic of this device is adapted to the non-linear current gain behaviour of the power transistor providing a m inimum power dissipation. The TDA8143 is internally protected


    OCR Scan     		PDF TDA8143 TDA8143

    L1209

    Abstract: V799
    Text: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR 2SK1584 _ y N-CHANNEL MOS FET FOR SW ITCHING PACKAG E D IM E N S IO N S «Unit : mm The 2SK1584, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output o f ICs having a 5 V


    OCR Scan     		PDF 2SK1584 2SK1584, VP15-00 WS60-0Û L1209 V799

    IC 2561 D 431

    Abstract: NK 0609 tf 1053 transistor equivalent table 1377 transistor Philips FA 261 lc 945 p transistor NPN TO 92 lc 945 p transistor NPN lc 945 p transistor BFG93 BFG93A
    Text: OGPMf l f l O 0 T 0 Philips Semiconductors NPN 6 GHz wideband transistor — g IAPX Product specification BFG93A; BFG93A/X; BFG93A/XR N AMER P H I L I P S / D I S C R E T E J> b?E PINNING FEATURES PIN • High power gain • Low noise figure • Gold metallization ensures


    OCR Scan     		PDF BFG93A; BFG93A/X; BFG93A/XR BFG93A BFG93 BFG93A/X MSB014 OT143. IC 2561 D 431 NK 0609 tf 1053 transistor equivalent table 1377 transistor Philips FA 261 lc 945 p transistor NPN TO 92 lc 945 p transistor NPN lc 945 p transistor BFG93A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET TFT COLOR LCD MODULE NL8060AC26-11 26 cm 10.4 type , 800 x 600 pixels, 262144 colors, incorporated two lamps/edge-light type backlight D E S C R IP T IO N N L 8 0 6 0 A C 2 6 -1 1 is a T F T (thin film transistor) active matrix color liquid crystal display (LCD) module comprising


    OCR Scan     		PDF NL8060AC26-11 BHR-03VS-1

    Untitled

    Abstract: No abstract text available
    Text: m 7*12*1237 rz 7 Ä 7f G04b243 ôbQ • SGTH _ SGS-TUOMSON RÆ Q M[iLËOT(s«S S T P 4 N 1 0 0 XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss S TP 4N 1 0 0 X I ■ . ■ . . ■ . 1000 V R d S( oii < 4 0 Id 2 A TYPICAL RDS(on) = 3.1 Cl


    OCR Scan     		PDF G04b243 7TETS37 STP4N100XI

    transistor BC 575

    Abstract: BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90
    Text: T E L E F U N K E N E L E C T R O N IC m D fllC fl'îSO Q 'îb 000533 b 3 BFY 90 Ml e l e c t r o n i c Creative Technologies Silicon NPN Epitaxial Planar R F Transistor Applications: General up to GHz range Features: • Power gain 8 dB 800 MHz • Noise figure < 5 dB


    OCR Scan     		PDF 569-GS transistor BC 575 BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90