MJ10100
Abstract: all transistor transistor Common Base configuration AN875 transistor on semiconductor AN875 K.S. Terminals USE OF TRANSISTOR MJ10021 fastest finger first
Text: AN875/D Power Transistor Safe Operating Area Special Considerations for Switching Power Supplies http://onsemi.com Prepared by: Warren Schultz Applications Engineering APPLICATION NOTE Introduction The power transistor, in today’s switching power supply,
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AN875/D
r14525
MJ10100
all transistor
transistor Common Base configuration
AN875
transistor
on semiconductor AN875
K.S. Terminals
USE OF TRANSISTOR
MJ10021
fastest finger first
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TRANSISTOR D 1978
Abstract: BD135 BD136 BUX84
Text: BUX84 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK ● 40 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 3 A Peak Collector Current ● Typical tf = 200 ns at 25°C AUGUST 1978 - REVISED MARCH 1997 TO-220 PACKAGE
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BUX84
O-220
TRANSISTOR D 1978
BD135
BD136
BUX84
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BLX97
Abstract: philips Trimmers 60 pf lt 860 IEC134 D0141 s3 vision
Text: N AUER P HI LI PS/DISCRETE - B 6 D MAINTENANCE TYPE 01860 ObE D D 7" - • bbSBTBl □omD'Jfl 3 7 ? ""*7 ' “ BLX97 U.H.F. LINEAR POWER TRANSISTOR N-P-N m ulti-em itter silicon planar epitaxial transistor prim arily fo r use in linear u.h.f. amplifiers for
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BLX97
BLX97
philips Trimmers 60 pf
lt 860
IEC134
D0141
s3 vision
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philips 3595
Abstract: BLX69 BLX69A 60306 cm 3593
Text: 86D 0 1790 D T i N AMER P H I L I P S / D I S C R E T E ObE D • BLX69A bbSBTBl 0014028 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V, The transistor is resistance stabilized and is
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BLX69A
philips 3595
BLX69
BLX69A
60306
cm 3593
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HF 331 transistor
Abstract: No abstract text available
Text: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and
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BLY92A
HF 331 transistor
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lc 945 p transistor NPN TO 92
Abstract: BLX96 blx96a IEC134 lc 945 p transistor s3 vision
Text: N AUER PHILIPS/DISCRETE ObE D 86 D 0 1 8 5 2 MAINTENANCE TYPE D ~ • T ^53*131 GOIHCHO T ~ ÔY [I "" BLX96 JL U.H.F. LINEAR POW ER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for television transposers and transmitters.
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0G14D10
BLX96
lc 945 p transistor NPN TO 92
BLX96
blx96a
IEC134
lc 945 p transistor
s3 vision
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TRANSISTOR A3
Abstract: transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10
Text: -— . L I_ N AMER PHILIPS/DISCRETE ObE D 86D 0 1 4 7 0 D bbS3=î31 00137Ga T • T~ 3 /f BLW60 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial
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bbS3T31
BLW60
TRANSISTOR A3
transistor c 3274
BLW60
transistor c 1974
transistor wz blw60
philips carbon film resistor
capacitor polyester philips
trimmer 3-30 pf
TRIMMER capacitor 5-60 pF
trimmer PT 10
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transistor c 1974
Abstract: No abstract text available
Text: 11 N AI1ER PHILIPS/DISCRETE bbS3=!31 001370a T QhZ D 86D 0 1 4 7 0 D 11 T BLW60 3 7- If _ V.H.F. P O W E R TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and 0 operated mobile, industrial and m ilitary transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized.
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001370a
BLW60
0D13720
transistor c 1974
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Untitled
Abstract: No abstract text available
Text: OLE D N AUER PHILIPS/DISCRETE 86D MAINTENANCE TYPE ^5 3 *1 3 1 DOIHQIQ 1 T ~ 3 ?-o y D 01852 • BLX96 _Jl U.H.F. LINEAR POWER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u .h .f. amplifiers for television transposers and transmitters.
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BLX96
7ZH737
bbS3T31
-16dB)
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PDF
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Untitled
Abstract: No abstract text available
Text: i - 86D 0 1 86 0 m ObE D N AUER PHILIPS/DISCRETE D T - bbSBTBl DDIMDIS 3 T" 7 3 BLX97 MAINTENANCE TYPE U.H.F. LINEAR POWER TRANSISTOR N-P-N m ulti-em itter silicon planar epitaxial transistor primarily fo r use in linear u.h.f. amplifiers for television transposers and transmitters.
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BLX97
class-78
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ERO Metallized Polyester Film Capacitor
Abstract: BLX97 TRANSISTOR D 1978 IEC134 YP-2010
Text: P H IL IP S INTERNATIONAL MAINTENANCE TYPE 41E D • 7110 ûE b 0027ÔÔ5 D ■ PHIN [* BLX97 7 33-07 ' U.H.F. LINEAR PO W ER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor prim arily for use in linear u.h.f. am plifiers for television transposers and transmitters.
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711002b
BLX97
ERO Metallized Polyester Film Capacitor
BLX97
TRANSISTOR D 1978
IEC134
YP-2010
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transistor rf cm 1104
Abstract: BLY92A transistor 1971 3309 power transistor transistor VHF 1104 PHILIPS FW 36 20 431202036640 choke T3309 bly92 transistor c 1971
Text: 11 PHILIPS INTERNATIONAL MAINTENANCE TYPE 711DÛ2b DQS7TÌ3 3 E IPHIN 41E D BLY92A T -3 3 -0 9 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage o f 28 V. The transistor Is resistance stabilized and
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BLY92A
T-33-Of
transistor rf cm 1104
BLY92A
transistor 1971
3309 power transistor
transistor VHF 1104
PHILIPS FW 36 20
431202036640 choke
T3309
bly92
transistor c 1971
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Untitled
Abstract: No abstract text available
Text: i 86D 0 1 7 9 0 T - 33 -1 BLX69A N AUER PHILIPS/DISCRETE QbE D bb53ci31 0014036 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V , The transistor is resistance stabilized and is
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BLX69A
bb53c
bb53131
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BLX69A
Abstract: BLX69 7Z66 TRANSISTOR D 1978
Text: PH I L IP S I N T E R N A T I O N A L MAINTENANCE TYPE 41E D • 711002b, D0E7Ö1S 1 I PHIN BLX69A r - 3 3 - n U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and Is
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711002b
BLX69A
T-33-IÃ
BLX69A
BLX69
7Z66
TRANSISTOR D 1978
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MJ10100
Abstract: AN-875 W. Schultz mj1010 MJ10021
Text: I AN-875 MOTOROLA r Application Note Semiconductor Products Inc. POWER TRANSISTOR SAFE OPERATING AREA SPECIAL CONSIDERATIONS FOR SWITCHING POWER SUPPLIES P re p a re d by W a rre n S ch u ltz A p p lic a tio n s E n g in eerin g INTRODUCTION The power transistor, in today’s switching power
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AN-875
AN875/D
MJ10100
AN-875
W. Schultz
mj1010
MJ10021
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RC723DP
Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525
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/2525A
/3525A
/2527A
/3527A
523/3523A
RC723DP
SN72748L
MC7805G
LM340H-05
SG3525 equivalent
transistor KT 209 M
78M15HM
SN52107L
SG711
SG7812CK
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MJ10100
Abstract: MJ1002 RBSOA mj1010 AN-861 MJ10021
Text: AN-861 M O TO R O LA Semiconductor Products Inc. Application Note POWER TRANSISTOR SAFE OPERATING AREA — SPECIAL CONSIDERATIONS FOR MOTOR DRIVES Prepared by W a r re n S c h u ltz A p p lic a tio n s E n g in e e rin g M o t o r d rives p resent a u n iq u e set o f safe op erating area
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AN-861
AN861/D
AN861/D
MJ10100
MJ1002
RBSOA
mj1010
AN-861
MJ10021
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TRANSISTOR D 1978
Abstract: No abstract text available
Text: BUX84 NPN SILICON POWER TRANSISTOR C o p y rig h t 1997, Power Innovations Limited, UK • 40 W at 25°C Case Temperature • 2 A Continuous Collector Current • 3 A Peak Collector Current • Typical tf = 200 ns at 25°C AUG UST 1978 - REVISED MARCH 1997
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BUX84
O-220
TRANSISTOR D 1978
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TRANSISTOR D 1978
Abstract: No abstract text available
Text: BUX85 NPN SILICON POWER TRANSISTOR C o p y rig h t 1997, Power Innovations Limited, UK • 40 W at 25°C Case Temperature • 2 A Continuous Collector Current • 3 A Peak Collector Current • Typical tf = 200 ns at 25°C AUG UST 1978 - REVISED MARCH 1997
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BUX85
TRANSISTOR D 1978
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2N498
Abstract: 2N497 2N497S 2N498S 2N65 2N656S 2N657S transistor 2N656
Text: MIL-S-19500/74E AMENDMENT 4 11 AUGUST 1986 SUPERSEDING AMENDMENT 3 26 June 1978 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON* M F n r i i M - P n U F n ^ tV p 'eV VN4 97 , ' Y nV9~8 ,* 2N 6 56Y N 6577 ' ZN497S, 2N498S, 2N656S, 2N657S
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MIL-S-19500/74E
2N498,
2V657
2N497S,
2N498S,
2N656S,
2N657S
MIL-S-19500/74E,
2N497"
2N497S"
2N498
2N497
2N497S
2N498S
2N65
2N656S
2N657S
transistor 2N656
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bd743 transistor
Abstract: BD744 bd744c BD743B TEXAS INSTRUMENTS BD743 BD743A BD743B BD743C T1S63 bd744c texas instruments
Text: BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS _ A U G U ST 1978 - R E V IS E D M A Y 1995 • Designed for Complementary Use with the BD744 Series • 90 W at 25°C Case Temperature • 15 A Continuous Collector Current
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BD743,
BD743A,
BD743B,
BD743C
O-220
BD744
BD743
BD743A
BD743B
bd743 transistor
bd744c
BD743B TEXAS INSTRUMENTS
T1S63
bd744c texas instruments
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transistor a719
Abstract: A719 4392 ic equivalent 2N3904
Text: MIL-S-19500/529 EL 10 May 1978 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3904 This specification is approved for use by the Electronics Command, Department of the Army, and is available for use by all Departments and Agencies of the Department of Defense.
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MIL-S-19500/529
2N3904
MIL-S-19500/
MIL-S-19500.
MIL-S-19500
5961-A719)
transistor a719
A719
4392 ic equivalent
2N3904
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D 1878 TRANSISTOR
Abstract: No abstract text available
Text: TtP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS CopyrlaW 0 1997, Power Innovations Llmltsd. UK_ AU G U ST 1978 - R E V IS E D M A R C H 1997 • D esigned lo r Com plem entary U se with TIP100, TIP101 and TIP102
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TtP105,
TIP106,
TIP107
TIP100,
TIP101
TIP102
O-220
T1P105
TIP106
TIP105
D 1878 TRANSISTOR
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RAZFE
Abstract: rtqa 180 12 v dc to ac converter circuit diagram 211-AN ac to ac convertor circuit power convertor dc to dc dc dc transformer design with 50 v output U24026 220 v. ac to dc converter circuit diagram dc to ac convertor
Text: A*6EAunoviNemem B B “ 7.3 Hiiyy 43993 E rteg RFRj April 1978 Pa3e ABB Relays PC/DC CONVERTOR TYPE 'RTQA ISO GENERAL DC/DC convertor type'RTQA ISO is used as a supply unit in distance relay RAZFE and in directional wave detector RALDA. The convertor supplies the internal static circuits with
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e7343993
211-AN
211-AS
RAZFE
rtqa 180
12 v dc to ac converter circuit diagram
ac to ac convertor
circuit power convertor dc to dc
dc dc transformer design with 50 v output
U24026
220 v. ac to dc converter circuit diagram
dc to ac convertor
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