IEC134
Abstract: LAE4002S
Text: I-« N AMER P H IL IP S /D IS C R E T E OLE D • hbSBTBl 0014*107 T ■ LAE4002S MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter ciass-A linear power amplifiers up to 4 GHz. Diffused emitter . ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure
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LAE4002S
OT-100.
L-13-â
Zo-50n
IEC134
LAE4002S
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160V 30A TRANSISTOR
Abstract: power transistor 200V, 30A
Text: TOSHIBA { D I S C R E T E / O P T O 9097250 ¿Toshiba T O S H IB A TT < D IS C R E T E / O P T O > DE | l C H 7 a S D D01bflD4 7 |~~ 99D 16804 D T -3 q -\3 TOSHIBA FIE LD EFFECT TRANSISTOR YT F 2 5 0 SIL IC O N N CHANNEL MOS TYPE ff-M OS I SEMICONDUCTOR
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D01bflD4
250uA
250uA
00A/us
160V 30A TRANSISTOR
power transistor 200V, 30A
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A83A marking
Abstract: 113A db 435A 95A 640 marking 113a LTE21009R LTE21009RA transistor 81 110 w 85 MARKING 41B marking code 41b
Text: -7^33-0^ LTE21009R LT E 21009R A ,{ PHILIPS INTERNATIONAL StE D • 7110fi2b 0041,218 Rbfl ■ PHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4.2 GHz. Diffused em itter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich
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LTE21009R
LTE21009RA
711002b
FO-41B)
LTE21009RA
A83A marking
113A db
435A
95A 640
marking 113a
transistor 81 110 w 85
MARKING 41B
marking code 41b
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dupline ffd 1550
Abstract: ffd 1550 dupline+128+ffd dupline 128 fmk
Text: Dupline Field- and Installationbus Receiver with Demultiplex Output Type D 1230 5111 • • • • • • • • 8-channel receiver 8 : 1 demultiplex function 2 NPN transistor outputs Enable and disable output operation D-housing Plug-in type module
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz.
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LbS3T31
LTE21025R
FO-41B)
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2501 OPTO
Abstract: toshiba hay 3AZA Toshiba hay 37 F251
Text: 1 TOSHIBA -CDISCRETE/OPTO} »Ena^SSO 99D 16806 9097250 TOSHIBA <OISCRETE/OPTO ¿Toshiba SEMICONDUCTOR OGlbflOb □ D "T -3 q - | 3 TOSHIBA FIELD EFFECT TRANSISTOR Y T F 2 5 1 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0S I) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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DEntH72Sa
100nA
250uA
250uA
00A/us
2501 OPTO
toshiba hay
3AZA
Toshiba hay 37
F251
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP8N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP8N50E TMOS E-FET ™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n
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MTP8N50E/D
TP8N50E
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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Untitled
Abstract: No abstract text available
Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK FEATURES • ■ ■ ■ ■ ■ SY10EP51V DESCRIPTION 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143
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320ps
SY10EP51V
SY10EP51V
EP51V
HEP51V
HEP51V
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Untitled
Abstract: No abstract text available
Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK SY10EP51V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143
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320ps
SY10EP51V
EP51V
HEP51V
HEP51V
SY10EP51V
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SY10EP51V
Abstract: SY10EP51VKI SY10EP51VKITR SY10EP51VZI SY10EP51VZITR
Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK FEATURES • ■ ■ ■ ■ ■ SY10EP51V FINAL DESCRIPTION 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143
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SY10EP51V
320ps
SY10EP51V
EP51V
HEP51V
SY10EP51VKI
SY10EP51VKITR
SY10EP51VZI
SY10EP51VZITR
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Untitled
Abstract: No abstract text available
Text: 5V/3.3V D FLIP-FLOP WITH RESET AND DIFFERENTIAL CLOCK ECL Pro SY10EP51V FINAL FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 320ps typical propagation delay Maximum frequency > 3GHz typical 75Ω internal input pulldown resistor Transistor count: 143
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320ps
SY10EP51V
EP51V
HEP51V
HEP51V
SY10EP51V
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TOSHIBA 1N DIODE
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE/ OPTO } "H 9097250 TOSHIBA DISCRETE/OPTO ¿ / o ìh ìh tt DE I T Q T T S S O QOlbñQO O I~~ 99D 16800 TOSHIBA F IE L D SEMICONDUCTOR DT-39-13 E FFE C T TRANSISTOR Ï T F - 2 4 2 SIL IC O N TECHNICAL DATA N CHANNEL MOS-TYPE ( Tl-MOS
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DT-39-13
100nA
250uA
00A/us
TOSHIBA 1N DIODE
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NT 407 F MOSFET TRANSISTOR
Abstract: MTP8N50E TMOS E-FET
Text: MOTOROLA Order this document by MTP8N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP8N50E N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without
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MTP8N50E/D
MTP8N50E
NT 407 F MOSFET TRANSISTOR
MTP8N50E
TMOS E-FET
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Untitled
Abstract: No abstract text available
Text: b b S B ' m DD14TS7 3 D E V E L O P M E N T DATA This data sheet contains advance Information and specifications are subject to change without notice. LTE21009R LTE21015R 11' N ANER PHILIPS/DISCRETE ObE D M ICROW AVE LINEAR POW ER TRA N SISTO R N-P-N silicon transistor for use in common-emitter class-A linear power amplifiers up to 4,2 GHz.
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DD14TS7
LTE21009R
LTE21015R
FO-41B)
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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Untitled
Abstract: No abstract text available
Text: D A T A S H E E T CERLED Ceramic Chip SMD SMD – Wide-Viewing Angle CR 50 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR50TE-DLF with daylight
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CR50TE-DLF)
DTS1005
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C8050
Abstract: AN569 MMSF3350 MMSF3350R2 SMD310
Text: MOTOROLA Order this document by MMSF3350/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3350 WaveFET Power Surface Mount Products HDTMOS Single N-Channel Field Effect Transistor SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 11 mW WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s
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MMSF3350/D
MMSF3350
C8050
AN569
MMSF3350
MMSF3350R2
SMD310
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMSF3350/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3350 WaveFET Power Surface Mount Products T HDTMOS Single N-Channel Field Effect Transistor u w f ™ SINGLE TMOS POWER MOSFET 30 VOLTS TMOS WaveFET™ devices are an advanced series of power MOSFETs which utilize M otorola’s
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MMSF3350/D
MMSF3350
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905-170
Abstract: MRF3010 VK200 VK20019-4B
Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,
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MRF3010/D
MRF3010
905-170
MRF3010
VK200
VK20019-4B
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,
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MRF3010/D
MRF3010
MRF3010
MRF3010/D
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Untitled
Abstract: No abstract text available
Text: an A M P com pany Wireless Bipolar Power Transistor, 15W 1.78-1.90 GHz Features • • • • • • • • PH1819-15N S/b Cc*4 NPN Silicon Micro w ave Pow er T ran sisto r D esigned for Linear A m plifier A pplications Class AB: -34 dBc Typ 3rd IMD at 15 W atts PKP
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PH1819-15N
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dupline ffd
Abstract: No abstract text available
Text: Dupline Field- and Installationbus Transmitter for Numerical Counter Signals Type FFD 1680 • • • • • • • • Transmitter with counter input 4-digit totalizing up-counter Overflow indication Reset input D-housing Plug-in type module LED-indication for supply
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Gavazzi ffd
Abstract: 4 digit up counter diagram Carlo Gavazzi Group dupline component DUPLINE FFD transistor d 1680 COUNTER LED bcd 4 digit COUNTER LED bcd 4 digit up counter power supply diagram 4-digit counter
Text: Transmitter for Numerical Counter Signals Type FFD 1680 • • • • • • • • Product Description Dupline transmitters with pulse input and 4-digit totalizing up-counter. Reset and disable inputs. Detection, up- Fieldbus Installationbus Transmitter with counter input
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